UMS CHV2241

CHV2241
K-band Oscillator with integrated Q-band Harmonic
Mixer
GaAs Monolithic Microwave IC
Description
The CHV2241 is a monolithic multifunction
proposed for frequency generation and
transposition. It integrates a K-band oscillator, a
Q-band harmonic mixer and buffer amplifiers.
For performance optimisation, an external port
(ERC) allows a passive resonator coupling to
the oscillator (at half output frequency). All the
active devices are internally self biased.
The circuit is manufactured with the P-HEMT
process : 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
+V
-V
RF
F_lo = (F_rf - F_if)/2
ERC
HIGH Q
RESONATOR
x2
IF
LO_out_aux
Multifunction block diagram
0
Main Features
n K-band Oscillator + Q-band harmonic
mixer
n External resonator for centre frequency
control and phase noise optimisation
n High quality oscillator when coupled to
a dielectric resonator
n Low conversion loss
n High temperature range
n On chip self biasing
n Automatic assembly oriented
n Chip size 1.82 x 0.97 x 0.1 mm
Conversion loss (dB)
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
37
37,5
38
38,5
RF Frequency (GHz)
Typical conversion loss characteristic
Main Characteristics
Tamb = +25°C
Symbol
Parameter
F_rf
RF frequency
F_lo
Oscillator frequency
Pn
Oscillator phase noise @ 100kHz (38GHz)
Lc
Conversion loss
Min
Typ
Max
Unit
37.5
38.25
39
GHz
(F_rf - F_if)/2
-100
dBc/Hz
7
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHV22411074 -15-Mar.-01
1/8
Specifications subject to change without notice
united monolithic semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
39
CHV2241
K-band Oscillator / Q-band Mixer
Electrical Characteristics
Full temperature range, used according to section “Typical assembly and bias configuration”
Symbol
F_rf
F_if
F_lo
P_lo
Pn
P_V+
Lc
P_1dB_rf
Plolk_if
P2lo_rf
VSWR_rf
IMP_if
+V
+I
-V
-I
Top
Parameter
RF frequency
IF frequency
Oscillator frequency (1)
Auxiliary LO output power (optional)
Phase noise (given at RF frequency) (2)
@ 1kHz
@ 10kHz
@ 100kHz
@ 200kHz
@ 1MHz
Frequency pushing vs positive supply
voltage
Conversion loss
RF input power at 1dB
LO leakage at IF port (3)
2LO leakage at RF port (3)
VSWR at RF input port
IF load impedance
Positive supply voltage (4)
Positive supply current
Negative supply voltage (4)
Negative supply current
Operating temperature range
Min
37.5
0.1
Typ
38.25
Max
39
1.5
(F_rf - F_if)/2
-15
-8
-4
3
-13
4.4
-4.6
-40
Unit
GHz
GHz
dBm
-45
-78
-105
-114
-129
300
-35
-68
-95
-104
-119
1000
dBc/Hz
7
-8
-25
-40
2:1
50
4.5
50
-4.5
6
11
0
-18
-30
2.5:1
dB
dBm
dBm
dBm
4.6
90
-4.4
10
+100
kHz/v
Ω
V
mA
V
mA
°C
(1) The centre frequency is given by the external passive resonator.
See part “Proposed external high Q resonator“ for frequency temperature drift
example.
DRO frequency long term stability is DR environment stability dependant
(hermeticity …).
(2) This characteristic depends on the external resonator Q, the given performance has
been obtained by using an external dielectric resonator (see section “Proposed External
High Q resonator”)
(3) Without external filtering
(4) Negative supply voltage must be applied at least 1us before positive supply
voltage.
Ref. : DSCHV22411074 -15-Mar.-01
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Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
K-band Oscillator / Q-band Mixer
CHV2241
Absolute Maximum Ratings (1)
Symbol
P_rf
+V
-V
+I
-I
Tstg
(1)
(2)
Parameter
Maximum RF input power (2)
Positive supply voltage
Negative supply voltage
Positive supply current
Negative supply current
Storage temperature range
Values
7
5
-5
100
15
-55 to +155
Unit
dBm
V
V
mA
mA
°C
Operation of this device above anyone of these parameters may cause permanent damage.
CW mode.
Ref. : DSCHV22411074 -15-Mar.-01
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Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
K-band Oscillator / Q-band Mixer
CHV2241
Chip Mechanical Data and Pin References
4
3
5
2
6
1
7
13
12
11
10
9
8
Unit = µm
External chip size (including saw streets)= 1820 x 970 +/- 35
Chip thickness = 100 +/- 10
HF Pads (2, 6) = 68 x 118
DC/IF Pads (+auxiliary LO output) = 100 x 100
Pin number
1,3,5,7,8
2
4
6
9
10
11
12,13
Pin name
Description
Ground : should not be bonded. If required,
please ask for more information
ERC
External Resonator Coupling Port
LO_OUT_AUX Oscillator auxiliary output port (optional)
RF input port
RF
IF output port
IF
NC
-V
Negative supply voltage
+V
Positive supply voltage
Ref. : DSCHV22411074 -15-Mar.-01
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Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
K-band Oscillator / Q-band Mixer
CHV2241
Typical Assembly and Bias Configuration
4
3
µ-strip line
5
2
L_erc
µ-strip line
6
L_rf
1
7
13
12
11
10
>= 120pF
+V
9
8
>= 120pF
-V
IF
DC and control lines
This drawing shows an example of assembly and bias configuration. All the
transistors are internally self biased. The positive and negative voltages can be
respectively connected together (see drawing) according to the recommended
values given in the electrical characteristics table.
For the RF pads the equivalent wire bonding inductances (diameter=25µm) have
to be according to the following recommendation.
Port
Equivalent inductance
(nH)
ERC (2)
L_erc = 0.4
LO_OUT_AUX (4)
Not critical , < 1nH
Optional
RF (6)
L_rf = 0.28
Approximative wire
length (mm)
0.5
0.35
For a micro-strip configuration a hole in the substrate is recommended for chip
assembly.
Ref. : DSCHV22411074 -15-Mar.-01
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Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
K-band Oscillator / Q-band Mixer
CHV2241
Proposed external high Q resonator
This chip has been especially designed to be coupled to a high Q dielectric
resonator (For example typical Q. @ 10 GHz=24000 for MURATA
/DRD036EC016). The resonance is given by a dielectric cylinder coupled to a
50Ω line. The size of the resonator gives the centre frequency and the space
between the resonator and the line gives the loaded quality factor. The following
drawing shows an example of external configuration. As it is the assembly of a
test fixture all the biases are used and the auxiliary LO output is connected.
However, for a fixed application the configuration given in the previous section
can by applied.
Alumina substrate : thickness=250µm
Dielectric
resonator
50 Ohm resistance
d
via hole
3l
2l
Additional information
n Resonator reference example = MURATA /DRD036EC016. Other
kind of resonators can be used (from TEKELEC or TRANS-TECH).
The temperature coefficient has to be chosen according to the
environment.
n Temperature drift : For example, in the –40 to +100°C temperature
range, the frequency drift @ 38GHz is 12 MHz with the MURATA /
DRD036EC016 resonator.
n Resonator coupling : d=0.3mm , l=1.5mm. These values have been
used in the test fixture, of course they can be modified if the
environment is different.
n 50Ω
Ω line width on alumina (heigth=0.25mm) = 0.238mm
n Cavity size (mm) : 18 x 17 x 7
Ref. : DSCHV22411074 -15-Mar.-01
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Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
K-band Oscillator / Q-band Mixer
CHV2241
External Resonator Coupling Information
The external resonator has to be an equivalent series resonance. However, this
impedance must be compatible to the negative impedance of the oscillator ERC
port in order to obtain the oscillation conditions and to avoid parasitic oscillations.
Typical impedance of ERC port (Zerc) is given in the following table. The
diagram shows this impedance in a wider band. These values don’t include the
wire bonding (self L_erc given in the previous section).
The recommended external resonator properties are:
• series equivalent resonance
• highest possible Q (dielectric resonator, cavity ...) if no tuning
bandwidth required
• resistance at resonant frequency lower than 20Ω
Ω
• out-off band impedance has to be designed to avoid parasitic oscillation.
Ref. : DSCHV22411074 -15-Mar.-01
7/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
K-band Oscillator / Q-band Mixer
CHV2241
Ordering Information
Chip form
:
CHV2241-99F/00
Information furnished is believed to be accurate and reliable. However united monolithic semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of united monolithic semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United monolithic semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from united
monolithic semiconductors S.A.S.
Ref. : DSCHV22411074 -15-Mar.-01
8/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09