UMS EC2612

EC2612
40GHz Super Low Noise PHEMT
Pseudomorphic High Electron Mobility Transistor
¦ Chip size : 0.63 x 0.37 x 0.1 mm
Description
The EC2612 is based on a 0.15µm gate
pseudomorphic high electron mobility
transistor (0.15µm PHEMT) technology.
Gate width is 120µm and the 0.15µm
T-shaped aluminium gate features low
resistance and excellent reliability.
The device shows a very high
transconductance which leads to very high
frequency and low noise performances.
It is available in chip form with sources via
holes connection.Only gate and drain wires
bounding are required.
Main Features
D: Drain
G: Gate
S: Source
¦ 0.8dB minimum noise figure @ 18GHz
¦ 1.5dB minimum noise figure @ 40GHz
¦ 12dB associated gain @ 18GHz
¦ 9.5dB associated gain @ 40GHz
Main Characteristics
Tamb = +25°C
Symbol
Idss
NFmin
Ga
Parameter
Saturated drain current
Min
Typ
Max
Unit
10
40
60
mA
1.5
1.9
dB
Minimum noise figure (F=40GHz)
Associated gain (F=40GHz)
8
9.5
dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Electrical Characteristics
Tamb = +25°C
Ref. : DSEC26120077 -17-Marc-00
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
40GHz Super Low Noise PHEMT
EC2612
Symbol
Idss
Test
Conditions
Parameter
Saturated drain current
Min
Typ
Max
Unit
Vds = 2V
Vgs = 0V
10
35
60
mA
-0.3
V
Vp
Pinch off voltage
Vds = 2V
Ids = 0.1mA
-1.0
-0.7
Gm
Transconductance
Vds = 2V
Ids = 25mA
50
70
Igsd
Gate to source/drain leakage
current
Vgsd = -2V
mS
5
µA
Typ.
Max
Unit
F= 12GHz
0.5
0.7
dB
F= 30GHz
1.3
1.7
Vds=2V
F= 40GHz
1.5
1.9
Ids=Idss/3
F= 12GHz
13
14
F= 30GHz
9
10
F= 40GHz
8
9.5
Dynamic characteristics
Tamb=25°C
Symbol
NF
Test
Conditions
Parameter
Minimum noise figure
Ga
Associated Gain
Min
dB
dB
dB
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Units
Vds
Drain to source voltage
3.5
V
Vgs
Gate to source voltage
-2.5
V
Pt
Total power dissipation
280
mW
Tch
Operating channel temperature
+175
°C
Tstg
Storage temperature range
-55 to +175
°C
(1) Operation of this device above any one of these parameters may cause permanent damage
Ref. : DSEC26120077 -17-Marc-00
2/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
40GHz Super Low Noise PHEMT
EC2612
Typical Scattering Parameters
Tamb = +25°C
"S" Parameters, including Lg=Ld~0.15nH
Vds = 3V, Ids = 30mA
Freq.
GHz
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
S11
dB
-0,14
-0,19
-0,35
-0,62
-0,89
-1,12
-1,39
-1,70
-1,96
-2,15
-2,34
-2,47
-2,62
-2,78
-2,91
-3,00
-3,05
-3,08
-3,13
-3,17
-3,24
-3,26
-3,30
-3,27
-3,26
-3,20
-3,17
-3,15
-3,19
-3,15
-3,10
-3,03
-2,99
-2,98
-2,97
-2,89
-2,85
-2,83
-2,82
-2,83
S11
/°
-11,0
-21,6
-32,3
-42,5
-52,5
-62,2
-71,9
-80,5
-88,2
-95,9
-104,1
-111,8
-118,7
-125,5
-132,8
-138,8
-144,2
-150,1
-156,5
-161,6
-166,5
-171,9
-176,7
179,3
175,8
172,0
167,4
163,5
159,2
155,1
151,2
147,7
144,1
139,8
136,5
132,3
128,2
124,9
121,6
116,9
S12
dB
-34,26
-28,41
-25,12
-22,92
-21,36
-20,14
-19,30
-18,69
-18,10
-17,61
-17,23
-16,88
-16,56
-16,35
-16,23
-16,11
-15,89
-15,79
-15,82
-15,77
-15,80
-15,90
-16,00
-15,96
-16,06
-16,12
-16,14
-16,16
-16,36
-16,39
-16,29
-16,37
-16,54
-16,62
-16,74
-16,88
-16,84
-16,86
-17,04
-17,11
S12
/°
81,5
76,1
70,0
64,0
58,1
52,2
46,4
42,0
38,0
33,5
29,4
25,8
22,1
18,7
15,4
12,9
10,0
6,7
4,1
1,5
-2,0
-4,8
-6,9
-9,8
-12,6
-14,9
-17,2
-20,0
-22,2
-23,1
-24,9
-27,5
-28,8
-30,6
-32,6
-34,5
-36,4
-39,7
-43,4
-46,0
S21
dB
15,88
15,69
15,48
15,20
14,87
14,53
14,16
13,74
13,34
12,96
12,57
12,23
11,83
11,40
11,02
10,60
10,24
9,86
9,49
9,14
8,75
8,40
8,02
7,68
7,39
7,12
6,86
6,62
6,28
5,98
5,70
5,40
5,12
4,89
4,68
4,51
4,24
4,04
3,84
3,47
S21
/°
169,7
162,2
154,5
146,7
139,3
132,3
125,7
119,5
113,9
108,3
103,0
97,6
92,4
87,4
82,5
78,1
73,7
69,5
65,2
61,2
57,2
53,3
50,0
46,8
43,6
40,4
37,1
33,4
29,7
26,5
23,1
19,5
16,7
13,4
10,1
6,4
3,0
-0,7
-4,4
-8,6
S22
dB
-4,78
-4,89
-5,11
-5,39
-5,80
-6,19
-6,67
-7,07
-7,38
-7,69
-8,04
-8,30
-8,55
-8,85
-9,03
-9,20
-9,29
-9,28
-9,34
-9,38
-9,45
-9,47
-9,50
-9,43
-9,31
-9,20
-9,13
-9,06
-8,95
-8,81
-8,67
-8,59
-8,45
-8,38
-8,34
-8,26
-8,10
-7,89
-7,77
-7,71
S22
/°
-8,8
-18,3
-27,2
-36,0
-44,4
-53,5
-61,5
-68,5
-75,6
-83,2
-90,1
-96,9
-104,7
-111,9
-118,3
-123,8
-130,8
-137,3
-143,2
-148,9
-155,9
-160,6
-164,8
-169,2
-174,6
-177,9
177,8
173,5
168,4
166,0
161,3
155,5
152,7
150,0
145,6
141,4
138,3
133,7
129,7
127,3
Tamb = +25°C
Ref. : DSEC26120077 -17-Marc-00
3/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
40GHz Super Low Noise PHEMT
EC2612
"S" Parameters, including Lg=Ld~0.15nH
Vds = 2V, Ids = 10mA
Freq.
GHz
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
S11
dB
-0,11
-0,26
-0,45
-0,66
-0,85
-1,03
-1,20
-1,41
-1,64
-1,85
-2,04
-2,19
-2,35
-2,51
-2,66
-2,78
-2,86
-2,92
-3,00
-3,08
-3,15
-3,20
-3,23
-3,25
-3,26
-3,27
-3,27
-3,26
-3,25
-3,21
-3,18
-3,13
-3,09
-3,07
-3,03
-3,00
-2,98
-2,97
-2,94
-2,93
S11
/°
-10,5
-20,7
-29,8
-38,4
-47,7
-56,5
-65,7
-73,9
-81,2
-88,7
-96,7
-104,2
-111,0
-117,8
-125,3
-131,4
-136,9
-142,9
-149,4
-154,6
-159,8
-165,3
-170,4
-174,7
-178,3
177,7
173,0
169,0
164,6
160,2
156,1
152,5
148,6
144,3
140,9
136,6
132,1
128,6
125,3
120,6
Ref. : DSEC26120077 -17-Marc-00
S12
dB
-33,67
-27,77
-24,45
-22,20
-20,57
-19,27
-18,36
-17,68
-17,04
-16,49
-16,08
-15,69
-15,33
-15,09
-14,94
-14,82
-14,57
-14,47
-14,48
-14,41
-14,41
-14,50
-14,60
-14,56
-14,65
-14,71
-14,72
-14,74
-14,93
-15,00
-14,93
-15,01
-15,21
-15,27
-15,31
-15,48
-15,49
-15,53
-15,77
-15,86
S12
/°
82,3
77,0
71,2
65,4
59,6
53,7
47,9
43,3
39,2
34,5
30,1
26,3
22,3
18,5
14,9
12,0
8,9
5,3
2,3
-0,5
-4,3
-7,5
-9,8
-12,9
-16,0
-18,5
-21,1
-24,0
-26,6
-27,9
-30,1
-33,0
-34,6
-36,7
-39,8
-42,0
-44,1
-47,7
-50,7
-53,4
4/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
S21
dB
13,52
13,38
13,22
13,01
12,74
12,48
12,19
11,85
11,51
11,19
10,85
10,56
10,22
9,82
9,49
9,12
8,78
8,43
8,08
7,76
7,40
7,07
6,72
6,38
6,10
5,83
5,57
5,34
5,03
4,73
4,47
4,18
3,91
3,69
3,49
3,33
3,07
2,89
2,67
2,33
S21
/°
170,6
163,7
156,4
149,0
141,8
135,0
128,5
122,4
116,7
111,0
105,6
100,1
94,7
89,6
84,5
79,9
75,2
70,9
66,4
62,2
58,0
54,0
50,4
47,1
43,6
40,3
36,8
33,1
29,3
26,0
22,4
18,6
15,8
12,3
9,0
5,2
1,7
-2,2
-6,0
-10,2
S22
dB
-4,76
-4,81
-4,99
-5,21
-5,56
-5,88
-6,29
-6,65
-6,91
-7,19
-7,53
-7,78
-8,03
-8,34
-8,49
-8,67
-8,82
-8,91
-9,02
-9,07
-9,18
-9,27
-9,29
-9,27
-9,22
-9,16
-9,08
-9,05
-8,91
-8,80
-8,67
-8,58
-8,49
-8,39
-8,30
-8,20
-8,08
-7,95
-7,86
-7,78
S22
/°
-7,4
-16,4
-24,5
-32,6
-40,5
-49,0
-56,6
-63,3
-70,0
-77,4
-84,0
-90,6
-98,0
-105,2
-111,6
-117,1
-124,0
-130,5
-136,3
-141,9
-149,1
-154,0
-158,4
-162,8
-168,4
-171,9
-176,3
179,2
174,0
171,5
166,5
160,6
157,5
154,9
151,3
146,8
143,3
138,6
133,6
131,3
Specifications subject to change without notice
40GHz Super Low Noise PHEMT
EC2612
Typical results
Tamb = +25°C
Ids vs Vds (Vgs=-0.2V/Step)
70
Vgs=0.4V
60
Ids (mA)
50
40
30
20
10
0
0
0,5
1
1,5
2
2,5
3
3,5
Vds (V)
1,00
16
0,90
15
0,80
14
0,70
13
0,60
12
0,50
11
0,40
Ga (dB)
NF (dB)
Nf and Associated Gain Vs Ids (F=12GHz)
10
4
9
14
19
24
29
34
39
Ids (mA)
Vds = 2V
2,40
10
2,20
9,5
2,00
9
1,80
8,5
1,60
8
1,40
7,5
1,20
Ga (dB)
NF (dB)
NF and Associated Gain vs Ids (F=40GHz)
7
0
5
10
15
20
25
30
35
40
Ids (mA)
Vds=2V
Ref. : DSEC26120077 -17-Marc-00
5/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
40GHz Super Low Noise PHEMT
EC2612
1,60
26
1,40
23
1,20
20
1,00
17
0,80
14
0,60
11
0,40
8
0,20
Ga (dB)
NF (dB)
NF and Associated Gain vs F (Ids=Idss/3)
5
5
10
15
20
25
30
35
40
Frequency (GHz)
Vds=2V
F=12GHz
50,
15,00
40,
14,00
30,
13,00
20,
12,00
10,
11,00
10,00
0,0
2,0
4,0
6,0
8,0
10,0
12,0
14,0
16,0
Power added efficiency
(%)
Associated gain (dB)
16,00
0,
18,0
Pout (dBm)
Vds = 3V, Ids = 31mA
Ref. : DSEC26120077 -17-Marc-00
6/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
40GHz Super Low Noise PHEMT
EC2612
(CHIP) Equivalent Circuit model (Drain and Gate bond wires included)
G
Lg
Rg
Cg d
Rd
Ld
D
Cg s
Vg s
Ri
Ta u
Gm
Rd s
Cds
Rs
Ls
S
backside of substrate
Parameter
Lg
Rg
Cgs
Ri
Cgd
Rs
Ls
Gm
Tau
Cds
Rds
Rd
Ld
Unit
pH
Ohms
fF
Ohms
fF
Ohms
pH
mS
ps
fF
Ohms
Ohms
pH
Value
152.54
0.13
142.6
3.2
39.57
2.83
0.11
98.14
2.8
46.84
116.8
2.83
117.01
Typical Noise Parameters at Vds=2V, Ids=14mA
(Drain and Gate bond wires included)
FREQUENCY
MHz
5000
8000
12000
15000
20000
24000
28000
30000
32000
35000
38000
40000
42000
45000
NF min
dB
0.26
0.356
0.492
0.595
0.762
0.892
1.01
1.07
1.137
1.223
1.307
1.362
1.415
1.493
Ref. : DSEC26120077 -17-Marc-00
Γopt
MOD.
0.811
0.746
0.658
0.598
0.514
0.473
0.460
0.465
0.475
0.5
0.533
0.556
0.581
0.618
Rn
Ang.(°)
19.888
32.28
49.899
64.263
91.037
114.916
139.673
151.723
163.219
179.087
-166.857
-158.467
-150.795
-140.488
7/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
14.089
13.33
11.87
10.51
7.965
5.923
4.16
3.473
2.966
2.63
2.923
3.538
4.536
6.843
Specifications subject to change without notice
40GHz Super Low Noise PHEMT
EC2612
Chip Mechanical Data
Drain area= 60*60 µm
Gate area = 60*60 µm
Thickness = 100 µm
Recommended die attach :
Stage temperature = 300°C
(minimize temp. and time whenever
possible)
Preforms = Au/Sn (80/20)
Atmosphere : dry nitrogen or forming
gas flow
Recommended bonding :
∅ 18 µm very pure gold wire
(thermal compression)
The bonder should be properly
grounded
dimensions in µm
Source pads are directly connected to
back face metallization through the via
holes
Ordering Information
Chip form
: EC2612-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSEC26120077 -17-Marc-00
8/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice