UMS CHA2093

CHA2093
20-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Vd
Description
7034
The CHA2093 is a two-stage wide band
monolithic low noise amplifier.
IN
OUT
Vg 1
It is supplied in chip form.
Gain ( dB )
Main Features
■ Broad band performance 20-30GHz
■ 2.2dB noise figure, 20-30GHz
■ 15dB gain, ± 0.5dB gain flatness
■ Low DC power consumption, 50mA
■ 20dBm 3rd order intercept point
■ Chip size : 1,67 x 1,03 x 0.1mm
Vg 2
20
10
18
9
16
8
14
7
12
6
10
5
8
4
6
3
4
2
2
1
0
0
10
15
20
25
30
35
40
Frequency ( GHz )
On wafer typical measurements.
Main Characteristics
Tamb = +25°C
Symbol
Parameter
NF
Noise figure, 20-30GHz
G
Gain
∆G
Min
13
Typ
Max
Unit
2.2
3.0
dB
15
± 0.5
Gain flatness
dB
± 1.0
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20939042
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Noise Figure ( dB )
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
25
50
20-30GHz Low Noise Amplifier
CHA2093
Electrical Characteristics
Tamb = +25°C, Vd = +4V Id=45mA
Symbol
Fop
G
Parameter
Min
Operating frequency range
20
Gain (1)
13
Typ
Max
Unit
30
Ghz
15
dB
∆G
Gain flatness (1)
± 0.5
± 1.0
dB
NF
Noise figure (1)
2.2
3.0
dB
VSWRin
Input VSWR (1)
3.0:1
VSWRout
Ouput VSWR (1)
3.0:1
IP3
3rd order intercept point
Output power at 1dB gain compression
P1dB
Id
Drain bias current
20
dBm
13
dBm
50
mA
(1) These values are representative of on-wafer measurements that are made without
bonding wires at the RF ports.When the chip is attached with typical 0.15nH input and
output bonding wires , the indicated parameter values should be improved.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Top
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA20939042
2/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
20-30GHz Low Noise Amplifier
CHA2093
Typical Results
Chip Typical Response ( On wafer Sij ) :
Tamb = +25°C
Bias Conditions : Vd = +4V Id=45mA
Freq
MS11
PS11
MS12
PS12
MS21
PS21
MS22
PS22
GHz
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
dB
-1.36
-1.98
-2.93
-4.5
-6.8
-10.02
-13.47
-14.68
-13.76
-12.83
-13.51
-14.3
-14.74
-14.63
-14.15
-13.71
-13.42
-13.54
-14.43
-14.48
-12.87
-8.84
-5.55
-3.72
-2.5
-1.88
-1.52
-1.32
-1.07
-0.93
-0.82
-0.68
-0.52
-0.5
-0.41
-0.37
°
140
121.9
101.1
77.7
50.1
16.4
-30
-86
-131
-159.2
177.8
170.9
167.2
168
163.4
155.8
145.5
124.4
100.2
56.9
5.6
-37.4
-73.3
-101.3
-123.2
-141.2
-155.7
-167.5
-177.6
172.6
164.7
157.2
149.5
142
135.3
128.4
dB
-62.29
-58.39
-53.05
-49.08
-46.97
-44.52
-42.23
-40.43
-39.41
-38
-36.01
-34.99
-34.53
-34.46
-33.67
-33.27
-32.65
-32.6
-32.49
-31.69
-31.87
-31.22
-31.23
-32.96
-34.73
-35.69
-35.69
-37.95
-38.15
-43.41
-43.1
-43.1
-43.23
-44.08
-45.8
-45.05
°
-138.5
-130.1
-130.3
-146.8
-163.9
173.2
160.2
138.2
126.2
104.7
92.4
63.7
46.8
24.6
6.3
-7.6
-29.3
-51.5
-68.3
-88.8
-115.7
-140.4
-171
159.7
134.8
121.6
98
72.2
56.8
86.9
76.9
44.4
39.6
24
21
18.1
dB
4.35
7.36
9.77
11.61
12.9
13.86
14.55
15
15.36
15.69
15.79
15.96
15.98
15.84
15.75
15.6
15.55
15.46
15.48
15.48
15.24
14.69
13.43
11.43
9.01
6.2
3.35
0.36
-2.78
-6.02
-9.59
-13.6
-18.24
-24.6
-35.19
-37.14
°
51.6
27.2
0.8
-26.2
-53.2
-78.7
-103.5
-127
-149.8
-171.8
165.6
144.3
122.3
102.1
80.9
60.2
40.3
18.6
-2.8
-27.3
-53
-82.2
-112.8
-141.9
-168.7
167.5
145.9
125.7
107.4
89
71.9
55.3
40.2
27.2
30.1
126.8
dB
-16.6
-16.75
-16.67
-16.77
-17.47
-17.67
-18.06
-18.55
-18.7
-17.9
-15.62
-14.48
-13.4
-12.6
-11.67
-11.4
-11.3
-10.33
-9.98
-8.88
-7.99
-6.86
-6.35
-6.69
-7.51
-8.65
-9.92
-11.17
-12.15
-12.5
-12.27
-11.82
-10.89
-9.87
-8.91
-8.04
°
151.6
145.1
137.9
129.8
122.7
122.2
118.4
118.4
125.4
131.3
131.1
127
120.5
116.3
107.1
100.6
96.1
91.6
85.7
80.2
70.5
58.1
40.1
20.4
1.5
-17
-36.6
-56.5
-78.9
-103.1
-127.3
-148.5
-166.3
-179.6
167.4
156.2
Ref. : DSCHA20939042
3/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
20-30GHz Low Noise Amplifier
CHA2093
Typical Results
Chip Typical Response ( On wafer Sij ) :
Tamb = +25°C
Vd = 4V ; Id = 45mA
20
15
Gain, RLoss ( dB )
10
5
DBS11
DBS22
Gain
0
-5
-10
-15
-20
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
Frequency ( GHz )
Gain, NF ( dB )
Typical Gain and Matching measurements on wafer.
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Gain
NF
Gab
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
Frequency ( GHz )
Typical Gain and Noise Figure measurements on wafer.
Ref. : DSCHA20939042
4/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
20-30GHz Low Noise Amplifier
CHA2093
Typical Results
Tamb = +25°C
Vd = 4V ; Id = 45mA
16
16
14
14
12
12
10
10
8
8
6
6
4
4
Pout
Gain
2
Gass (dB)
Output power (dBm)
F=20GHz
2
0
0
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
Input power (dBm)
16
16
14
14
12
12
10
10
8
8
6
6
Pout
Gain
4
2
Gass (dB)
Output power (dBm)
F=30GHz
4
2
0
0
-3
-2
-1
0
1
2
3
4
5
6
7
Input power (dBm)
Typical Output Power and Gain measurements in test jig
(included losses of the jig)
Ref. : DSCHA20939042
5/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
20-30GHz Low Noise Amplifier
CHA2093
Typical Chip Assembly
To Vd DC Drain supply feed
47pF
7034
25
50
IN
OUT
47pF
47pF
To Vg1 DC Gate supply feed
To Vg2 DC Gate supply feed
Dimensions : 1670 x 1030µm ± 10µm
Mechanical data
1670
1365
1065
1030
CHA2093
445
445
565
865
Ref. : DSCHA20939042
6/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
20-30GHz Low Noise Amplifier
CHA2093
Chip Biasing
This chip is a two stage amplifier, and flexibility is provided by the access to number of pads.
The internal DC electrical schematic is given in order to use these pads in a safe way.
Vd
50
25
IN
OUT
Vds1
Vg 1
Vds2
Vg 2
The two requirements are :
N°1 : Not exceed Vds = 3.5Volt
( internal Drain to Source voltage ).
N°2 : Not biased in such a way that Vgs becomes positive.
( internal Gate to Source voltage )
We propose two standard biasing :
Low Noise and low consumption :
Vd = 3.5V and Id = 30mA ( Vg1=Vg2)
Low Noise and high output power :
Vd = 4.0V and Id = 45mA.( A separate acces to
the gate voltages of the first and the output stage is provided. Nominal bias is obtained for a
typical current of 30mA for the output stage and 15 mA for the first stage. The first step to
bias the amplifier is to tune the Vg1 =-1V and Vg2 to drive 30mA for the full amplifier. Then
Vg1 is reduced to obtain 45 mA of current through the amplifier.
Ref. : DSCHA20939042
7/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
20-30GHz Low Noise Amplifier
CHA2093
Ordering Information
Chip form :
CHA2093-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA20939042
8/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice