WINGS 2SC4596E

2SC4596E
SILICON EPITAXIAL PLANNAR TRANSISTOR
GENERAL DESCRIPTION
High frequency, high power NPN transistors in a
plastic envelope, primarily for use in audio and general
purpose
TO-220F
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VBE
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Emitter forward voltage
Fall time
CONDITIONS
VBE = 0V
Tmb 25
IC = 2A; IB = 0.2A
IE = 2A
IC=2A,IB1=-IB2=0.2A,VCC=30V
MIN
-
MAX
100
60
5
25
1.5
1.5
0.5
UNIT
V
V
A
A
W
V
V
s
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
Tmb 25
MIN
-55
-
MAX
100
60
5
5
1
25
150
150
UNIT
V
V
V
A
A
W
MAX
0.1
0.1
UNIT
mA
mA
V
V
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
Cc
ton
ts
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 30MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
CONDITIONS
VCB=100V
VEB=5V
IC=1mA
IC =2A; IB = 0.2A
IC =1A; VCE = 5V
IC =0.5A; VCE = 10V
VCB = 10V
IC=2A,IB1=-IB2=0.2A,VCC=30V
IC=2A,IB1=-IB2=0.2A,VCC=30V
IC=2A,IB1=-IB2=0.2A,VCC=30V
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: [email protected]
MIN
60
100
120
1.5
200
80
0.5
1.5
0.5
MHz
pF
us
us
us