Silicon Epitaxial Planar Transistor 2SD717 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P(I)D QUICK REFERENCE DATA SYMBOL VCBO VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time CONDITIONS VBE = 0V Tmb 25 IC = 4.0A; IB=0.4A IF = 3.5A IC=4A,IB1=-IB2=0.4A,VCC=30V TYP 1.5 0.4 MAX 70 70 10 80 2 2.0 1.0- UNIT V V A A W V V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN - Tmb 25 -55 - CONDITIONS VCB=70V VEB=5V IC=1mA IC = 4.0A; IB = 0.4A IC = 1A; VCE = 5V IC = 1A; VCE = 12V VCB = 10V IC=4A,IB1=-IB2=0.4A,VCC=30V IC=4A,IB1=-IB2=0.4A,VCC=30V IC=4A,IB1=-IB2=0.4A,VCC=30V TYP 70 50 10 350 0.3 2.5 0.4 MAX 70 70 5 10 2.5 80 150 150 UNIT V V V A A W MAX 0.2 0.2 UNIT mA mA V V ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] 3 240 - MHz pF us us us