BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°c) Characteristic Symbol Rating Unit VCES 850 1000 400 450 9 5 10 2 4 100 150 -65~150 V V V V V A A A A W °c °c Collector-Emitter Voltage:BUT11 :BUT11A Collector-Emitter Voltage:BUT11 :BUT11A Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Collector Dissipation (Tc=25°c) Junction Temperature Storage Temperature VCEO VEBO IC IC IB IB PC Tj Tstg ELECTRICAL CHARACTERISTICS (Ta=25°c) Characterristic Collector Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Saturation Voltage Base- Emitter Saturation Voltage Symbol :BUT11 :BUTIIA :BUT11 :BUTIIA :BUT11 :BUTIIA :BUT11 :BUTIIA Turn-On Time Storage Time Fall Time Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com VCEO(SUS) ICES IEBO VCE(sat) VBE(sat) ton tstg tf Test Condition IC=100mA, IB=0 Min Typ Max V 400 450 VCE= 850V , VEB= 0 VCE= 1000V , VEB= 0 VEB= 9V , IC=0 IC=3A, IB=0.6A IC=2.5A, IB=0.5A IC=3A, IB=0.6A IC=2.5A, IB=0.5A VCC= 250V , IC=2.5A IB1= IB2=0.5A Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] Unit 1 1 10 1.5 1.5 1.3 1.3 1 4 0.8 V mA mA µA V V V V µS µS µS