YSTONE BIR

SURFACE MOUNT INFRARED EMITTING DIODES
BIR-Hxx3A
Series
■ Absolute Maximum Ratings
(Ta=25℃)
UNIT
SPEC.
IF
mA
30
IFp
A
1.0
VR
V
5
Topr
℃
-25～+80
Tstg
℃
-30～+85
Electro-optical Data (At 20mA)
Chip
Lens
Part No.
Material
λ
p
λ
(nm)
(nm)
BIR-HM133A
GaAlAs
940
50
BIR-HN033A
GaAlAs
880
50
Appearance
Vf (V)
Typ.
Max.
1.2
1.7
1.4
Ir
(A)
Radiant Power
Po (mw/sr)
Ifp = 20mA
PW = 10 s
DC = 1%
Tr
(ns)
Tf
(ns)
Min.
Typ.
50
1.00
4.00
500
200
2.0
50
0.71
1.20
500
200
Water Clear
Viewing
Angle
2 θ1/2
(deg)
70˚
BIR-HO033A
GaAlAs
850
50
1.4
2.0
50
1.98
4.00
500
200
BIR-HO133A
GaAlAs
850
50
1.4
2.0
50
1.41
3.00
500
200