TI TRF3701IRHCR

TRF3701
0.6 GHz to 1.0 GHz
QUADRATURE MODULATOR
SLWS145 – FEBRUARY 2003
FEATURES
D
D
D
D
Typical Carrier Suppression > 35 dBc
Large Signal Output
Differential or Single-Ended Signal Output
Silicon Germanium Technology
APPLICATIONS
D Transmit Channel TDMA: GSM, IS-136,
D
D
D
D
Edge/UMC-136
CDMA: IS-95, UMTS, CDMA2000
Wireless Local Loop
Wireless LAN IEEE 802.11
LMDS, MMDS
The TRF3701 is a low noise quadrature direct modulator that is capable of converting complex input signals
from 0 – 300 MHz up to RF. An internal analog combiner sums the real and imaginary components of the RF
outputs. This combined output can directly feed the RF pre-amp at frequencies of up to 1.0 GHz. The modulator
is implemented as a double balanced mixer. An internal LO phase splitter accommodates a single LO input.
functional block diagram
VCC
IVIN
IREF
+45
–45
LO
Σ
RFOUT
50
QVIN
QREF
PWD GND
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright  2003, Texas Instruments Incorporated
PRODUCT PREVIEW information concerns products in the formative or
design phase of development. Characteristic data and other
specifications are design goals. Texas Instruments reserves the right to
change or discontinue these products without notice.
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1
PRODUCT PREVIEW
description
TRF3701
0.6 GHz to 1.0 GHz
QUADRATURE MODULATOR
SLWS145 – FEBRUARY 2003
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 5.5 V
Input current range, II: IVIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TBD
QVIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TBD
IREF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TBD
QREF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TBD
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TBD
Total current, peak (all inputs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TBD
Operating free-air temperature range, TA: TRF3701C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
TRF3701I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 85°C
Lead temperature 1, 6 mm (1/16 inch) from the case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
recommended operating conditions
MIN
NOM
MAX
UNIT
Analog DC supply voltage, VCC
4.75
5
5.5
V
Reference voltage, IREF, QREF
3.9
4.1
VCC–0.5
V
PRODUCT PREVIEW
Supplies and References
Local Oscillator Input (LO)
Input Frequency, f
Power level (refer to specified input impedance)
TBD
1000
MHz
–6
6
dBm
0
300
MHz
Signal Inputs (IVIN, QVIN)
Input frequency range (1dB)
2
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TRF3701
0.6 GHz to 1.0 GHz
QUADRATURE MODULATOR
SLWS145 – FEBRUARY 2003
electrical characteristics, GSM 900 (925 MHz) signal performance over recommended operating
conditions, VCC = 5 V, VI(IREF)=VI(QREF) = 4.1 V, ZL = 50 Ω, P(LO) = –5 dBm, single-ended input
IMD
IP3 (Output referred)
CONDITIONS
MIN
I Signal: f(1) = 100 kHz, f(2) = 300 kHz,
Q Signal: f(1) = 100 kHz, f(2) = 300 kHz, f(LO) = 925 MHz,
VI(IVIN)=VI(QVIN) = 0.6 V, P(LO) = –5 dBm
f(LO) = 925 MHz, f(1)= 100 kHz, f(2) = 300 kHz,
VI(IVIN)=VI(QVIN) = 0 – 1.5 V
TYP
MAX
UNIT
65
dBc
18
dBm
5
dBm
1–dB Intercept point
(Output referred)
f(LO) = 925 MHz, f(1)=100 kHz,
VI(IVIN)=VI(QVIN) = 0 – 1.5 V
Noise spectral density
(NSD)
f(LO) = 925 MHz, offset –20 Mhz, 30 kHz Resolution = .B/W,
VI(IVIN)=VI(QVIN)=VI(IREF) =VI(QREF) = 4.1 V
Output Power
Single tone 100 kHz, IVIN =QVIN= 1.0V,
I and Q signals driven in quadrature.
Output Impedance
P(LO) = 0, IVIN =QVIN= O/C
Carrier suppression
(unadjusted)
Single tone 100 kHz, IVIN =QVIN= 1.0,
I and Q signals driven in quadrature. P(RFOUT) = –4 dBm.
35
Sideband suppression
(unadjusted)
Single tone 100 kHz, IVIN =QVIN= 1.0V,
I and Q signals driven in quadrature. P(RFOUT) = –4 dBm.
30
Phase error
Single tone 100 kHz, IVIN =QVIN= 1.0 V,
I and Q signals driven in quadrature. P(RFOUT) = –4 dBm.
1°
Noise figure
Single tone 100 kHz, IVIN =QVIN= 1.0 V,
I and Q signals driven in quadrature
24 27
Conversion loss
Single tone 100 kHz, IVIN =QVIN= 1.0 V,
I and Q signals driven in quadrature. P(RFOUT) = –5 dBm
8
dB
EVM
Integrated across GSM 28 symbol midamble,
GSM DC – 100 kHz, P(RFOUT) = –5 dBm,
IVIN = QVIN = 1.0 V
2
%
Modulation mask
Single GSM 200 kHz carrier,
20 MHz Offset
P(RFOUT) = –5 dBm
–157
–5
–4
30 –
j1
100 kHz offset, 30 kHz bandwidth
–3.5
200 kHz offset, 30 kHz bandwidth
–35
250 kHz offset, 30 kHz bandwidth
–38
400 kHz offset, 30 kHz bandwidth
–72
≥ 600 kHz < 1200 kHz, 30 kHz BW
–82
≥ 1200 kHz < 1800 kHz, 30 kHz BW
–85
≥ 1800 kHz < 6000 kHz, 30 kHz BW
–87
≥ 6000 kHz, 100 kHz BW
–92
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dBm/Hz
dBm
Ω
dBc
35
PRODUCT PREVIEW
PARAMETER
dB
dB
dBc
3
TRF3701
0.6 GHz to 1.0 GHz
QUADRATURE MODULATOR
SLWS145 – FEBRUARY 2003
MECHANICAL DATA
RHC (S–PQFP–N16)
(CUSTOM PACKAGE)
4,15
PLASTIC QUAD FLATPACK
A
3,85
B
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
4,15
3,85
16
1
PRODUCT PREVIEW
PIN 1 INDEX AREA
TOP AND BOTTOM
2
1,00
0,80
0,20 NOMINAL
LEAD FRAME
0,08 C
SEATING PLANE
0,05
0,00
C
1,65 MAX
0,80
PIN 1 CHAMBER
16
0,725
0,525
2
5
1
16
1,65 MAX
9
EXPOSED THERMAL DIE PAD
12
D
16
0,435
0,315
BOTTOM VIEW
0,10
4204353/A 05/02
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. QFN (Quad Flatpack No–Lead) Package configuration.
D. The Package thermal performance may be enhanced by bonding the thermal die pad to an external thermal plane. This pad is
electrically and thermally connected to the backside of the die and possibly selected ground leads.
4
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Copyright  2003, Texas Instruments Incorporated