SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS(on)= 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb =25°C ID 150 mA Pulsed Drain Current I DM 3 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb =25°C P tot 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 0.8 MAX. UNIT CONDITIONS. 2.4 V I D =1mA, V GS =0V V I D =1mA, V DS = V GS Gate-Body Leakage I GSS 20 nA V GS =± 20V, V DS =0V Zero Gate Voltage Drain Current I DSS 0.5 50 µA µA V DS =60V, V GS =0V V DS =48V, V GS =0V, T=125°C (2) mA V DS =18V, V GS =10V 5 Ω V GS =10V, I D =500mA mS V DS =18V, I D =500mA On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(2) g fs 750 150 Input Capacitance (2) C iss 35 pF Common Source Output Capacitance (2) C oss 25 pF Reverse Transfer Capacitance (2) C rss 8 pF Turn-On Delay Time (2)(3) t d(on) 3 typ 5 ns Rise Time (2)(3) tr 4 typ 7 ns Turn-Off Delay Time (2)(3) t d(off) 4 typ 6 ns Fall Time (2)(3) tf 5 typ 8 ns V DS =18V, V GS =0V, f=1MHz V DD ≈18V, I D =500mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 393 ZVN3306F TYPICAL CHARACTERISTICS 8V 0.8 7V 0.6 6V 0.4 5V 0.2 4V 3V 0 0 2 4 6 8 10 VDS-Drain Source Voltage (Volts) ID(On) -On-State Drain Current (Amps) VGS=10V 9V 1.0 10 8 6 ID= 1A 4 2 0.5A 0.25A 0 0 2 VDS - Drain Source Voltage (Volts) 1.0 VDS=10V 0.8 0.6 0.4 0.2 0 2 4 6 8 10 5 ID= 1A 0.5A 0.25A 1 1 10 gfs-Forward Transconductance (mS) Normalised RDS(on) and VGS(th) 1.6 1.4 1.2 n) (o DS eR nc ta sis e R ce ur So 1.8 ain Dr 1.0 0.8 0.6 0.4 -80 -60 -40 -20 Gate Thresh old 20 On-resistance vs gate-source voltage 2.4 ID=-0.5A 10 VGS-Gate Source Voltage (Volts) Transfer Characteristics 2.0 8 10 VGS-Gate Source Voltage (Volts) 2.2 6 Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance (Ω) ID(On) -On-State Drain Current (Amps) Saturation Characteristics 0 4 VGS -Gate Source Voltage (Volts) Voltage VGS (th) 0 20 40 60 80 100 120 140 160 200 180 160 140 120 100 VDS=18V 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID(on) - Drain Current (Amps) T-Temperature (C°) Normalised RDS(on) and VGS(th) vs Temperature 3 - 394 Transconductance v drain current ZVN3306F 200 50 180 160 140 40 120 C-Capacitance (pF) gfs-Transconductance (mS) TYPICAL CHARACTERISTICS VDS=18V 100 80 60 40 Ciss 20 10 Coss Crss 20 0 0 0 1 2 3 4 5 6 7 8 9 10 VGS-Gate Source Voltage (Volts) VDD=20V 30V 50V 16 14 0 10 20 30 40 VDS-Drain Source Voltage (Volts) Transconductance v gate-source voltage VGS-Gate Source Voltage (Volts) 30 ID=800mA 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Q-Charge (nC) Gate charge v gate-source voltage 3 - 395 Capacitance v drain-source voltage 50