SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250F ISSUE 3 - JANUARY 1996 S D G PARTMARKING DETAIL MX SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -45 V Continuous Drain Current at Tamb=25°C Pulsed Drain Current ID -90 mA IDM -1.6 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS -45 Gate-Source Threshold Voltage VGS(th) -1 Gate-Body Leakage -70 V ID=-100µ A, VGS=0V -3.5 V ID =-1mA, VDS= VGS IGSS -20 nA VGS=-15V, VDS=0V Zero Gate Voltage Drain Current IDSS -0.5. µ A VDS=-25V, VGS=0V Static Drain-Source On-State Resistance (1) RDS(on) 9 14 Ω VGS=-10V,ID=-200mA Forward Transconductance (1)(2) gfs 90 mS VDS=-10V,ID=-200mA Input Capacitance (2) Ciss 25 pF VDS=-10V, VGS=0V, f=1MHz Turn-On Delay Time (2)(3) td(on) 10 ns Rise Time (2)(3) tr 10 ns Turn-Off Delay Time (2)(3) td(off) 10 ns Fall Time (2)(3) tf 10 ns VDD ≈ -25V, ID=-200mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 55 BS250F BS250F TYPICAL CHARACTERISTICS -14V -12V -10V -0.6 -9V -8V -0.4 -7V -6V -5V -0.2 -4V -14V -0.8 -12V -0.6 -10V -0.4 -9V -8V -7V -0.2 0 -20 -30 -40 0 -50 VDS - Drain Source Voltage (Volts) ID= -400mA -4 -2 -200mA 0 -100mA -4 -6 -8 -10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) -8 -2 100 80 Note:VDS=-10V 60 40 20 -8 -10 -0.6 -0.4 -0.2 0 -8 -10 VGS-Gate Source Voltage (Volts) Note:VGS=0V 50 f=1MHz 40 Ciss 30 20 Coss 10 Transfer Characteristics 0 -10 -20 -30 -40 -50 -60 -70 -6V -7V -10V -15V 10 -20V -100 Normalised RDS(on) and VGS(th) VGS=-5V -1000 ID-Drain Current (mA) On-resistance vs Drain Current 2.4 Capacitance v drain-source voltage DS 1.8 1.6 e eR rc ou S ain 1.4 1.2 0.8 0.6 eR nc ta sis VGS=VDS Dr ID=-1mA Gate Thres hold Voltage VGS(TH) 1.0 -40 -20 0 20 40 60 80 100 120 140 160 180 Junction Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3 - 56 -4 -5 -6 -7 -8 -9 -10 Note:ID=- 0.2A 0 -2 VDS= -20V -40V -60V -4 -6 -8 -10 -12 -14 -16 0.5 1.0 Gate charge v gate-source voltage n) (o 2.0 -3 Q-Gate Charge (nC) VGS=-10V ID=0.37A 2.2 -2 2 1 0 VDS-Drain Source Voltage (Volts) 2.6 100 0 Transconductance v gate-source voltage Crss -6 20 VGS-Gate Source Voltage (Volts) 0 -4 40 0 -1 Transconductance v drain current VDS=-10V -2 Note:VDS=-10V 60 ID- Drain Current (Amps) -0.8 0 80 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 60 Voltage Saturation Characteristics RDS(on)-Drain Source On Resistance (Ω) -6 -1.0 VGS-Gate Source Voltage (Volts) -10 -4 Saturation Characteristics -10 0 100 VDS - Drain Source Voltage (Volts) Output Characteristics -6 -2 C-Capacitance (pF) -10 120 0 0 0 1 -6V -5V -4.5V 120 gfs-Transconductance (mS) -16V -0.8 ID - Drain Current (Amps) ID - Drain Current (Amps) -1.0 VGS= -16V -1.0 VGS-Gate Source Voltage (Volts) VGS=-20V gfs-Transconductance (mS) -1.2 TYPICAL CHARACTERISTICS 3 - 57 1.5 BS250F BS250F TYPICAL CHARACTERISTICS -14V -12V -10V -0.6 -9V -8V -0.4 -7V -6V -5V -0.2 -4V -14V -0.8 -12V -0.6 -10V -0.4 -9V -8V -7V -0.2 0 -20 -30 -40 0 -50 VDS - Drain Source Voltage (Volts) ID= -400mA -4 -2 -200mA 0 -100mA -4 -6 -8 -10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) -8 -2 100 80 Note:VDS=-10V 60 40 20 -8 -10 -0.6 -0.4 -0.2 0 -8 -10 VGS-Gate Source Voltage (Volts) Note:VGS=0V 50 f=1MHz 40 Ciss 30 20 Coss 10 Transfer Characteristics 0 -10 -20 -30 -40 -50 -60 -70 -6V -7V -10V -15V 10 -20V -100 Normalised RDS(on) and VGS(th) VGS=-5V -1000 ID-Drain Current (mA) On-resistance vs Drain Current 2.4 Capacitance v drain-source voltage DS 1.8 1.6 e eR rc ou S ain 1.4 1.2 0.8 0.6 eR nc ta sis VGS=VDS Dr ID=-1mA Gate Thres hold Voltage VGS(TH) 1.0 -40 -20 0 20 40 60 80 100 120 140 160 180 Junction Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3 - 56 -4 -5 -6 -7 -8 -9 -10 Note:ID=- 0.2A 0 -2 VDS= -20V -40V -60V -4 -6 -8 -10 -12 -14 -16 0.5 1.0 Gate charge v gate-source voltage n) (o 2.0 -3 Q-Gate Charge (nC) VGS=-10V ID=0.37A 2.2 -2 2 1 0 VDS-Drain Source Voltage (Volts) 2.6 100 0 Transconductance v gate-source voltage Crss -6 20 VGS-Gate Source Voltage (Volts) 0 -4 40 0 -1 Transconductance v drain current VDS=-10V -2 Note:VDS=-10V 60 ID- Drain Current (Amps) -0.8 0 80 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 60 Voltage Saturation Characteristics RDS(on)-Drain Source On Resistance (Ω) -6 -1.0 VGS-Gate Source Voltage (Volts) -10 -4 Saturation Characteristics -10 0 100 VDS - Drain Source Voltage (Volts) Output Characteristics -6 -2 C-Capacitance (pF) -10 120 0 0 0 1 -6V -5V -4.5V 120 gfs-Transconductance (mS) -16V -0.8 ID - Drain Current (Amps) ID - Drain Current (Amps) -1.0 VGS= -16V -1.0 VGS-Gate Source Voltage (Volts) VGS=-20V gfs-Transconductance (mS) -1.2 TYPICAL CHARACTERISTICS 3 - 57 1.5