ZXMC3A17DN8 ADVANCE INFORMATION COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS Q1 = N-channel Q2 = P-channel • Motor drive • LCD backlighting PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMC3A17DN8TA 7” 12mm 500 units ZXMC3A17DN8TC 13” 12mm 2500 units DEVICE MARKING Top View • ZXMC 3A17 PROVISIONAL ISSUE C - AUGUST 2004 1 SEMICONDUCTORS ZXMC3A17DN8 ADVANCE INFORMATION ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL N-channel P-channel UNIT Drain-Source Voltage V DSS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V ID 5.4 4.3 4.1 -4.4 -3.6 -3.4 A I DM 23 -20 A IS 2.6 -2.5 A I SM 23 -20 A Continuous Drain Current (V GS = 10V; T A =25°C) (b)(d) (V GS = 10V; T A =70°C) (b)(d) (V GS = 10V; T A =25°C) (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) (b) Power Dissipation at T A =25°C (a) (d) PD Linear Derating Factor Power Dissipation at T A =25°C (a) (e) Linear Derating Factor PD Power Dissipation at T A =25°C (b) (d) Linear Derating Factor PD T j , T stg Operating and Storage Temperature Range 1.25 W 10 mW/°C 1.8 W 14 mW/°C 2.1 W 17 mW/°C -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT (a) (d) R ⍜JA 100 °C/W Junction to Ambient (a) (e) R ⍜JA 70 °C/W (b) (d) R ⍜JA 60 °C/W Junction to Ambient Junction to Ambient NOTES: (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t ⱕ 10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width = 300s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with two active die running at equal power. PROVISIONAL ISSUE C - AUGUST 2004 SEMICONDUCTORS 2 ZXMC3A17DN8 ADVANCE INFORMATION CHARACTERISTICS PROVISIONAL ISSUE C - AUGUST 2004 3 SEMICONDUCTORS ZXMC3A17DN8 ADVANCE INFORMATION N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS 30 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State R DS(on) TYP. MAX. UNIT CONDITIONS V I D = 250A, V GS =0V 0.5 A V DS =30V, V GS =0V 100 nA V GS =±20V, V DS =0V V I D = 250A, V DS =V GS STATIC 1.0 Resistance (1) Forward 0.050 ⍀ V GS = 10V, I D = 7.8A 0.065 ⍀ V GS = 4.5V, I D = 6.8A V DS = 10V, I D = 7.8A g fs 10 S Input Capacitance C iss 600 pF Output Capacitance C oss 104 pF Reverse Transfer Capacitance C rss 58.5 pF Transconductance (1) (3) DYNAMIC (3) V DS = 25V, V GS =0V f=1MHz SWITCHING (2) (3) Turn-On-Delay Time t d(on) 2.9 ns Rise Time tr 6.4 ns Turn-Off Delay Time t d(off) 16 ns Fall Time tf 11.2 ns Gate Charge Qg 6.9 nC V DD = 15V, I D =3.5A R G ≅ 6.0⍀, V GS = 10V V DS = 15V, V GS = 5V I D = 3.5A Total Gate Charge Qg 12.2 nC Gate-Source Charge Q gs 1.7 nC Gate-Drain Charge Q gd 2.4 nC V SD 0.85 V DS = 15V, V GS = 10V I D = 3.5A SOURCE-DRAIN DIODE Diode Forward Voltage (1) 0.95 V T j =25°C, I S = 3.2A, V GS =0V (1) (2) (3) Reverse Recovery Time (3) t rr 18.8 ns T j =25°C, I F = 3.5A, Reverse Recovery Charge (3) Q rr 14.1 nC di/dt=100A/s Measured under pulsed conditions. Pulse width ⱕ 300ms; Duty cycle ⱕ 2%. Switching characteristics are independent of operating junction temperature. For design aid only, not subject to production testing. PROVISIONAL ISSUE C - AUGUST 2004 SEMICONDUCTORS 4 ZXMC3A17DN8 ADVANCE INFORMATION P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. V (BR)DSS -30 TYP. MAX. UNIT CONDITIONS V I D = -250A, V GS =0V STATIC Drain-Source Breakdown Voltage I DSS -1.0 A V DS = -30V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =±20V, V DS =0V Gate-Source Threshold V GS(th) V I D = -250A, V DS =V GS Zero Gate Voltage Drain Current -1.0 Voltage Static Drain-Source R DS(on) On-State Resistance (1) 0.070 ⍀ V GS = -10V, I D = -3.2A 0.110 ⍀ V GS = -4.5V, I D = -2.5A V DS = -15V, I D = -3.2A g fs 6.4 S Input Capacitance C iss 630 pF Output Capacitance C oss 113 pF Reverse Transfer Capacitance C rss 78 pF Forward Transconductance (1) (3) DYNAMIC (3) V DS = -15V, V GS =0V f=1MHz SWITCHING (2) (3) Turn-On-Delay Time t d(on) 1.7 ns Rise Time tr 2.9 ns Turn-Off Delay Time t d(off) 29.2 ns Fall Time tf 8.7 ns Gate Charge Qg 8.3 nC V DD = -15V, I D = -1A R G ≅ 6.0⍀, V GS = -10V V DS = -15V, V GS = -5V I D = -3.2A Total Gate Charge Qg 15.8 nC Gate-Source Charge Q gs 1.8 nC Gate Drain Charge Q gd 2.8 nC V SD -0.85 V DS = -15V, V GS = -10V I D = -3.2A SOURCE-DRAIN DIODE Diode Forward Voltage (1) -0.95 V T j =25°C, I S = -2.5A, V GS =0V Reverse Recovery Time (3) t rr 19.5 ns T j =25°C, I S = -1.7A, Reverse Recovery Charge (3) Q rr 16.3 nC di/dt=100A/s NOTES: (1) (2) (3) Measured under pulsed conditions. Pulse width ⱕ 300ms; Duty cycle ⱕ 2%. Switching characteristics are independent of operating junction temperature. For design aid only, not subject to production testing. PROVISIONAL ISSUE C - AUGUST 2004 5 SEMICONDUCTORS ZXMC3A17DN8 ADVANCE INFORMATION N-CHANNEL TYPICAL CHARACTERISTICS PROVISIONAL ISSUE C - AUGUST 2004 SEMICONDUCTORS 6 ZXMC3A17DN8 ADVANCE INFORMATION N-CHANNEL TYPICAL CHARACTERISTICS PROVISIONAL ISSUE C - AUGUST 2004 7 SEMICONDUCTORS ZXMC3A17DN8 ADVANCE INFORMATION P-CHANNEL TYPICAL CHARACTERISTICS PROVISIONAL ISSUE C - AUGUST 2004 SEMICONDUCTORS 8 ZXMC3A17DN8 ADVANCE INFORMATION P-CHANNEL TYPICAL CHARACTERISTICS PROVISIONAL ISSUE C - AUGUST 2004 9 SEMICONDUCTORS ZXMC3A17DN8 ADVANCE INFORMATION SO8 PACKAGE OUTLINE (Conforms to JEDEC MS-012AA Iss. C) Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max A 1.35 1.75 0.053 0.069 e A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 H 5.80 6.20 0.228 0.244 ⍜ 0° 8° 0° 8° E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 - - - - - 1.27 BSC Min Max 0.050 BSC © Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE C - AUGUST 2004 SEMICONDUCTORS 10