ZETEX ZXMN3A14F

ZXMN3A14F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=30V : RDS(on)=0.065 ; ID=3.9A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
SOT23
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC-DC Converters
• Power Management functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3A14FTA
7”
8mm
3000 units
ZXMN3A14FTC
13”
8mm
10000 units
DEVICE MARKING
• 314
PROVISIONAL ISSUE B - SEPTEMBER 2003
1
SEMICONDUCTORS
ZXMN3A14F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
30
V
Gate-Source Voltage
V GS
⫾20
V
Continuous Drain Current @ V GS = 10V; T A =25°C (b)
@ V GS = 10V; T A =70°C (b)
@ V GS = 10V; T A =25°C (a)
ID
3.9
A
3.2
A
3.2
A
(c)
Pulsed Drain Current
Continuous Source Current (Body Diode) (b)
I DM
18
A
IS
2.3
A
Pulsed Source Current (Body Diode) (c)
I SM
18
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
1
W
8
mW/°C
(b)
PD
Power Dissipation at T A =25°C
Linear Derating Factor
T j , T stg
Operating and Storage Temperature Range
1.5
W
12
mW/°C
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)
R ⍜JA
125
°C/W
Junction to Ambient (b)
R ⍜JA
83
°C/W
Junction to Ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.
PROVISIONAL ISSUE B - SEPTEMBER 2003
SEMICONDUCTORS
2
ZXMN3A14F
CHARACTERISTICS
PROVISIONAL ISSUE B - SEPTEMBER 2003
3
SEMICONDUCTORS
ZXMN3A14F
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
30
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
V
I D = 250␮A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
1
␮A
V DS = 30V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS =⫾12V, V DS =0V
V
I D = 250␮A, V DS =V GS
0.048
0.065
⍀
V GS = 10V, I D = 3.2A
0.069
0.095
⍀
V GS = 4.5V, I D = 2.6A
V DS = 15V, I D = 3.2A
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
Resistance (1)
R DS(on)
1.0
Forward Transconductance (1) (3)
g fs
7.1
S
Input Capacitance
C iss
448
pF
Output Capacitance
C oss
82
pF
Reverse Transfer Capacitance
C rss
49
pF
Turn-On-Delay Time
t d(on)
2.4
ns
Rise Time
tr
2.5
ns
Turn-Off Delay Time
t d(off)
13.1
ns
Fall Time
tf
5.3
ns
Total Gate Charge
Qg
8.6
nC
V DS = 15V, V GS = 10V
Gate-Source Charge
Q gs
1.4
nC
I D = 3.2A
Gate Drain Charge
Q gd
1.8
nC
Diode Forward Voltage (1)
V SD
0.85
Reverse Recovery Time (3)
t rr
13
ns
T j =25°C, I F = (1.6)A,
Reverse Recovery Charge (3)
Q rr
7
NC
di/dt=100A/␮s
DYNAMIC (3)
V DS = 15V, V GS =0V
f=1MHz
SWITCHING (2) (3)
V DD = 15V, V GS = 10V
I D = 1A
R G ≅6.0 ⍀
SOURCE-DRAIN DIODE
0.95
V
T j =25°C, I S = (2.5)A,
V GS =0V
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE B - SEPTEMBER 2003
SEMICONDUCTORS
4
ZXMN3A14F
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE B - SEPTEMBER 2003
5
SEMICONDUCTORS
ZXMN3A14F
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE B - SEPTEMBER 2003
SEMICONDUCTORS
6
ZXMN3A14F
PACKAGE OUTLINE
PAD LAYOUT
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
MILLIMETRES
DIM
INCHES
MIN
MAX
MIN
MAX
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
0.055
MILLIMETRES
DIM
INCHES
MIN
MAX
MIN
MAX
H
0.33
0.51
0.013
0.020
K
0.01
0.10
0.0004
0.004
C
ᎏ
1.10
ᎏ
0.043
L
2.10
2.50
0.083
0.0985
D
0.37
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
F
0.085
0.15
0.0034
0.0059
N
0.95 NOM
0.0375 NOM
⍜
10⬚ TYP
10⬚ TYP
G
1.90 NOM
0.075 NOM
© Zetex plc 2003
Americas
Asia Pacific
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Europe
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
PROVISIONAL ISSUE B - SEPTEMBER 2003
7
SEMICONDUCTORS