ZETEX ZXTD2M832TC

ZXTD2M832
MPPS™ Miniature Package Power Solutions
DUAL 20V PNP LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
VCEO= -20V; RSAT = 64m ; IC= -3.5A
DESCRIPTION
Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package)
outline, these new 4th generation low saturation dual transistors offer
extremely low on state losses making them ideal for use in DC-DC circuits
and various driving and power management functions.
Additionally users gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
3mm x 2mm (Dual die) MLP
PCB area and device placement savings
Lower package height (nom 0.9mm)
C2
Reduced component count
C1
FEATURES
• Low Equivalent On Resistance
B2
• Extremely Low Saturation Voltage (-220mV @ -1A)
• hFE characterised up to -6A
• IC = -3.5A Continuous Collector Current
B1
E2
• 3mm x 2mm MLP
E1
APPLICATIONS
• DC - DC Converters (FET Drivers)
• Charging circuits
• Power switches
PINOUT
• Motor control
• LED Backlighting circuits
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXTD2M832TA
7 ⴕⴕ
8mm
3000
ZXTD2M832TC
13ⴕ ⴕ
8mm
10000
3mm x 2mm MLP
underside view
DEVICE MARKING
D22
ISSUE 1 - JUNE 2002
1
ZXTD2M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
V CBO
LIMIT
UNIT
-25
V
V
Collector-Emitter Voltage
V CEO
-20
Emitter-Base Voltage
V EBO
-7.5
V
Peak Pulse Current
I CM
-6
A
Continuous Collector Current (a)(f)
IC
-3.5
A
Base Current
IB
-1000
mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
PD
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
PD
1.13
9
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
PD
3
24
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)(f)
R θJA
83.3
°C/W
Junction to Ambient (b)(f)
R θJA
51
°C/W
Junction to Ambient (c)(f)
R θJA
125
°C/W
Junction to Ambient (d)(f)
R θJA
111
°C/W
Junction to Ambient (d)(g)
R θJA
73.5
°C/W
Junction to Ambient (e)(g)
R θJA
41.7
°C/W
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
ISSUE 1 - JUNE 2002
2
ZXTD2M832
TYPICAL CHARACTERISTICS
3.5
VCE(SAT)
Limited
1
Max Power Dissipation (W)
IC Collector Current (A)
10
DC
1s
100ms
0.1
10ms
1ms
Note (a)(f)
0.01
100us
Single Pulse, Tamb=25°C
0.1
1
10
2.5
1.0
0.5
0.0
0
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
D=0.5
40
Single Pulse
D=0.05
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
PD Dissipation (W)
2.5
2.0
2oz copper
Note (g)
Continuous
2oz copper
Note (f)
1.5
1.0
1oz copper
Note (f)
0.5
0.0
0.1
1
75
100
125
150
225
200
175
150
125
100
75
50
25
0
0.1
1oz copper
Note (f)
1oz copper
Note (g)
2oz copper
Note (f)
2oz copper
Note (g)
1
10
100
Thermal Resistance v Board Area
3.5
Tamb=25°C
50
Board Cu Area (sqcm)
Transient Thermal Impedance
3.0 Tj max=150°C
25
Derating Curve
60
0
100µ
1oz Cu
Note (d)(f)
Temperature (°C)
Note (a)(f)
D=0.2
1oz Cu
Note (d)(g)
1.5
Safe Operating Area
20
2oz Cu
Note (a)(f)
2.0
VCE Collector-Emitter Voltage (V)
80
Tamb=25°C
2oz Cu
Note (e)(g)
3.0
1oz copper
Note (g)
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ISSUE 1 - JUNE 2002
3
ZXTD2M832
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V (BR)CBO
-25
Collector-Emitter Breakdown
Voltage
V (BR)CEO
Emitter-Base Breakdown Voltage
V (BR)EBO
MAX.
UNIT
CONDITIONS.
-35
V
I C =-100␮A
-20
-25
V
I C =-10mA*
-7.5
8.5
V
I E =-100␮A
Collector Cut-Off Current
I CBO
-25
nA
V CB =-20V
Emitter Cut-Off Current
I EBO
-25
nA
V EB =-6V
Collector Emitter Cut-Off Current
I CES
-25
nA
V CES =-16V
Collector-Emitter Saturation
Voltage
V CE(sat)
-19
-30
mV
-170
-220
mV
I C =-0.1A, I B =-10mA*
I C =-1A, I B =-20mA*
-190
-250
mV
I C =-1.5A, I B =-50mA*
-240
-350
mV
-300
mV
I C =-2.5A, I B =-150mA*
I C =-3.5A, I B =-350mA*
-225
Base-Emitter Saturation Voltage
V BE(sat)
-1.10
Base-Emitter Turn-On Voltage
V BE(on)
-0.87
Static Forward Current Transfer
Ratio
h FE
Transition Frequency
fT
-1.075 V
-0.95
V
I C =-3.5A, I B =350mA*
I C =-3.5A, V CE =-2V*
300
475
I C =-10mA, V CE =-2V*
300
450
150
230
I C =-0.1A, V CE =-2V*
I C =-2A, V CE =-2V*
15
30
150
180
MHz
30
I C =-6A, V CE =-2V*
I C =-50mA, V CE =-10V
f=100MHz
Output Capacitance
C obo
21
pF
V CB =10V, f=1MHz
Turn-On Time
t (on)
40
ns
Turn-Off Time
t (off)
670
ns
V CC =-10V, I C =1A
I B1 =I B2 =20mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 1 - JUNE 2002
4
ZXTD2M832
TYPICAL CHARACTERISTICS
1
0.25
IC/IB=50
Tamb=25°C
0.20
VCE(SAT) (V)
VCE(SAT) (V)
100°C
100m
IC/IB=100
IC/IB=50
10m
-55°C
10m
100m
1
0.00
1m
10
IC Collector Current (A)
VCE(SAT) v IC
VCE=2V
100°C
630
1.0
360
270
0.4
180
-55°C
0.2
90
10m
100m
0
10
1
hFE v IC
VBE(ON) (V)
10
1
10
IC/IB=50
VCE=2V
-55°C
0.6
25°C
0.4
100°C
10m
100m
1
IC Collector Current (A)
-55°C
0.6
25°C
100°C
0.4
10m
100m
IC Collector Current (A)
VBE(SAT) v IC
0.8
0.2
1m
1
0.8
1m
IC Collector Current (A)
1.0
VBE(SAT) (V)
450
25°C
0.6
0.0
1m
100m
540
1.0
0.8
10m
IC Collector Current (A)
VCE(SAT) v IC
Typical Gain (hFE)
Normalised Gain
1.4
1.2
25°C
0.10
0.05
IC/IB=10
1m
0.15
10
VBE(ON) v IC
ISSUE 1 - JUNE 2002
5
ZXTD2M832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES
DIM
INCHES
MILLIMETRES
DIM
MAX.
MIN.
MAX.
A
0.80
1.00
0.031
0.039
A1
0.00
0.05
0.00
0.002
E
A2
0.65
0.75
0.0255
0.0295
E2
0.43
0.63
0.017
A3
0.15
0.25
0.006
0.0098
E4
0.16
0.36
0.006
0.014
b
0.24
0.34
0.009
0.013
L
0.20
0.45
0.0078
0.0157
b1
0.17
0.30
0.0066
0.0118
L2
0.125
0.00
0.005
D
3.00 BSC
e
0.118 BSC
D2
0.82
1.02
0.032
0.040
D3
1.01
1.21
0.0397
0.0476
MIN.
r
⍜
MAX.
INCHES
MIN.
0.65 REF
2.00 BSC
0.075 BSC
0⬚
12⬚
MIN.
MAX.
0.0256 BSC
0.0787 BSC
0.0249
0.0029 BSC
0⬚
12⬚
© Zetex plc 2002
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ISSUE 1 - JUNE 2002
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