ZX3CDBS1M832 MPPS™ Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV (@1A); IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual comprises an ultra low saturation NPN transistor and a 1A Schottky barrier diode. This excellent combination provides users with highly efficient performance in applications including DC-DC and charging circuits. Users will also gain several other key benefits: Performance capability equivalent to much larger packages 3mm x 2mm Dual Die MLP Improved circuit efficiency & power levels PCB area and device placement savings Cathode C Lower package height (0.9mm nom) Reduced component count FEATURES B • Extremely Low Saturation Voltage (150mV @1A) • HFE characterised up to 6A • IC = 4.5A Continuous Collector Current E Anode • Extremely Low VF, fast switching Schottky • 3mm x 2mm MLP APPLICATIONS • DC - DC Converters PINOUT • Mobile Phones • Charging Circuits • Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZX3CDBS1M832TA 7 ⴕⴕ 8mm 3000 ZX3CDBS1M832TC 13ⴕ ⴕ 8mm 10000 3mm x 2mm Dual MLP underside view DEVICE MARKING BS1 ISSUE 3- OCTOBER 2007 1 ZX3CDBS1M832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Transistor Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 7.5 V Peak Pulse Current I CM 12 A Continuous Collector Current (a)(f) IC 4.5 A Continuous Collector Current (b)(f) IC 5 A Base Current IB 1000 mA Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.5 12 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2.45 19.6 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 1 8 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 1.13 9 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.7 13.6 W mW/°C Power Dissipation at TA=25°C (e)(g) Linear Derating Factor PD 3 24 W mW/°C Storage Temperature Range T stg Junction Temperature Tj -55 to +150 °C 150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(f) R θJA 83 °C/W Junction to Ambient (b)(f) R θJA 51 °C/W Junction to Ambient (c)(f) R θJA 125 °C/W Junction to Ambient (d)(f) R θJA 111 °C/W Junction to Ambient (d)(g) R θJA 73.5 °C/W Junction to Ambient (e)(g) R θJA 41.7 °C/W Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW. ISSUE 3- OCTOBER 2007 2 ZX3CDBS1M832 TRANSISTOR TYPICAL CHARACTERISTICS 1 DC 1s 100ms 0.1 10ms 1ms Note (a)(f) 0.01 100us Single Pulse, Tamb=25°C 0.1 Thermal Resistance (°C/W) Max Power Dissipation (W) VCE(SAT) Limited 1 10 2.5 2oz Cu Note (a)(f) 2.0 1oz Cu Note (d)(g) 1.5 1.0 0.5 0.0 0 1oz Cu Note (d)(f) 25 50 75 100 125 Temperature (°C) Safe Operating Area Derating Curve 80 Note (a)(f) 60 D=0.5 40 20 Single Pulse D=0.2 D=0.05 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) 2oz copper Note (g) Tamb=25°C 2.5 2.0 Continuous 2oz copper Note (f) 1.5 1.0 1oz copper Note (f) 0.5 0.0 0.1 1 1oz copper Note (f) 1oz copper Note (g) 2oz copper Note (f) 2oz copper Note (g) 1 10 Thermal Resistance v Board Area 3.5 3.0 Tj max=150°C 225 200 175 150 125 100 75 50 25 0 0.1 150 Board Cu Area (sqcm) Transient Thermal Impedance PD Dissipation (W) Tamb=25°C 2oz Cu Note (e)(g) 3.0 VCE Collector-Emitter Voltage (V) Thermal Resistance (°C/W) IC Collector Current (A) 3.5 10 1oz copper Note (g) 10 100 Board Cu Area (sqcm) Power Dissipation v Board Area ISSUE 3- OCTOBER 2007 3 100 ZX3CDBS1M832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Schottky Diode Continuous Reverse Voltage VR 40 V Forward Voltage @ I F =1000mA(typ) VF 425 mV Forward Current IF 1850 mA Average Peak Forward Current D=50% I FAV 3 A Non Repetitive Forward Current t≤ 100s t≤ 10ms I FSM 12 7 A A Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.2 12 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2 20 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 0.8 8 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 0.9 9 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.36 13.6 W mW/°C Power Dissipation at TA=25°C (e)(g) Linear Derating Factor PD 2.4 24 W mW/°C -55 to +150 °C 125 °C Storage Temperature Range T stg Junction Temperature Tj THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(f) R θJA 83 °C/W Junction to Ambient (b)(f) R θJA 51 °C/W Junction to Ambient (c)(f) R θJA 125 °C/W Junction to Ambient (d)(f) R θJA 111 °C/W Junction to Ambient (d)(g) R θJA 73.5 °C/W Junction to Ambient (e)(g) R θJA 41.7 °C/W Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 400mW. ISSUE 3- OCTOBER 2007 4 ZX3CDBS1M832 SCHOTTKY TYPICAL CHARACTERISTICS Max Power Dissipation (W) Thermal Resistance (°C/W) 3.0 Note (a)(f) 80 60 D=0.5 40 Single Pulse D=0.2 20 D=0.05 0 100µ 1m D=0.1 10m 100m 1 10 100 1k 1.5 0.5 0.0 0 Thermal Resistance (°C/W) PD Dissipation (W) 2.0 2oz copper Note (f) 1.0 0.0 0.1 1 25 50 75 100 125 Derating Curve 2oz copper Note (g) 1oz copper Note (f) 1oz Cu Note (d)(f) Temperature (°C) 3.0 0.5 1oz Cu Note (d)(g) 1.0 Transient Thermal Impedance 1.5 2oz Cu Note (a)(f) 2.0 Pulse Width (s) Tamb=25°C 2.5 Tj max=125°C Continuous Tamb=25°C 2oz Cu Note (e)(g) 2.5 1oz copper Note (g) 10 100 Board Cu Area (sqcm) 225 200 175 150 125 100 75 50 25 0 0.1 1oz copper Note (f) 1oz copper Note (g) 2oz copper Note (f) 2oz copper Note (g) 1 10 Board Cu Area (sqcm) Power Dissipation v Board Area Thermal Resistance v Board Area ISSUE 3- OCTOBER 2007 5 100 ZX3CDBS1M832 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. TRANSISTOR ELECTRICAL CHARACTERISTICS Collector-Base Breakdown Voltage V (BR)CBO 40 100 V I C =100A Collector-Emitter Breakdown Voltage V (BR)CEO 20 27 V I C =10mA* 7.5 8.2 Emitter-Base Breakdown Voltage V (BR)EBO V I E =100A Collector Cut-Off Current I CBO 25 nA V CB =32V Emitter Cut-Off Current I EBO 25 nA V EB =6V Collector Emitter Cut-Off Current I CES 25 nA V CES =16V Collector-Emitter Saturation Voltage V CE(sat) 8 90 115 190 210 15 150 135 250 270 mV mV mV mV mV I C =0.1A, I B =10mA* I C =1A, I B =10mA* I C =2A, I B =50mA* I C =3A, I B =100mA* I C =4.5A, I B =125mA* Base-Emitter Saturation Voltage V BE(sat) 0.98 -1.05 V Base-Emitter Turn-On Voltage V BE(on) 0.88 -0.95 V I C =4.5A, I B =125mA* I C =4.5A, V CE =2V* Static Forward Current Transfer Ratio h FE 200 300 200 100 Transition Frequency fT 100 I C =10mA, V CE =2V* I C =0.2A, V CE =2V* I C =2A, V CE =2V* I C =6A, V CE =2V* 400 450 360 180 140 MHz 30 I C =50mA, V CE =10V f=100MHz Output Capacitance C obo 23 pF V CB =10V, f=1MHz Turn-On Time t (on) 170 ns Turn-Off Time t (off) 400 ns V CC =10V, I C =3A I B1 =I B2 =10mA 60 V I R =300A SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS 40 Reverse Breakdown Voltage V (BR)R Forward Voltage VF 240 265 305 355 390 425 495 420 270 290 340 400 450 500 600 — mV mV mV mV mV mV mV mV 100 I F =50mA* I F =100mA* I F =250mA* I F =500mA* I F =750mA* I F =1000mA* I F =1500mA* I F=1000mA,Ta=100°C* Reverse Current IR 50 A V R =30V Diode Capacitance CD 25 pF f=1MHz,V R =25V Reverse Recovery Time t rr 12 ns switched from IF = 500mA to I R = 500mA Measured at IR = 50mA *Measured under pulsed conditions. ISSUE 3- OCTOBER 2007 6 ZX3CDBS1M832 TRANSISTOR TYPICAL CHARACTERISTICS 0.25 IC/IB=50 Tamb=25°C 0.20 100°C VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=100 10m IC/IB=50 10m 100m 25°C 0.10 -55°C 0.05 IC/IB=10 1m 1m 0.15 1 0.00 1m 10 IC Collector Current (A) VCE(SAT) v IC 10m 100m 1 10 1 10 IC Collector Current (A) VCE(SAT) v IC 630 1.0 100°C 0.8 360 25°C 270 -55°C 0.4 180 0.2 90 10m 100m 1 10 0 VBE(ON) (V) -55°C 0.6 25°C 100°C 10m 100m 1 25°C 10m 100m IC Collector Current (A) VBE(SAT) v IC VCE=2V IC Collector Current (A) 0.6 1m 0.8 1m -55°C 100°C hFE v IC 0.4 0.8 0.4 IC Collector Current (A) 1.0 IC/IB=50 450 0.6 0.0 1m 1.0 540 VBE(SAT) (V) Normalised Gain 1.2 Typical Gain (hFE) VCE=2V 10 VBE(ON) v IC ISSUE 3- OCTOBER 2007 7 ZX3CDBS1M832 SCHOTTKY TYPICAL CHARACTERISTICS ISSUE 3- OCTOBER 2007 8 ZX3CDBS1M832 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE DIMENSIONS MILLIMETRES DIM INCHES MILLIMETRES DIM MAX. MIN. MAX. A 0.80 1.00 0.031 0.039 A1 0.00 0.05 0.00 0.002 E A2 0.65 0.75 0.0255 0.0295 E2 0.43 0.63 0.017 A3 0.15 0.25 0.006 0.0098 E4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 L 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 L2 0.125 0.00 0.005 D 3.00 BSC e 0.118 BSC D2 0.82 1.02 0.032 0.040 D3 1.01 1.21 0.0397 0.0476 MIN. r ⍜ MAX. INCHES MIN. 0.65 REF 2.00 BSC 0.075 BSC 0⬚ 12⬚ MIN. MAX. 0.0256 BSC 0.0787 BSC 0.0249 0.0029 BSC 0⬚ 12⬚ © Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 3- OCTOBER 2007 9