HYNIX HYMP512R724-E3

240pin Registered DDR2 SDRAM DIMMs based on 512 Mb 1st ver.
This Hynix registered Dual In-Line Memory Module (DIMM) series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball
Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based Registered DDR2
DIMM series provide a high performance 8 byte interface in 133.35mm width form factor of industry standard. It is
suitable for easy interchange and addition.
FEATURES
•
JEDEC standard Double Data Rate2 Synchronous
•
Fully differential clock operations (CK & CK)
DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power
•
Programmable Burst Length 4 / 8 with both sequen-
Supply
•
tial and interleave mode
All inputs and outputs are compatible with SSTL_1.8
interface
•
4 Bank architecture
•
Posted CAS
•
Programmable CAS Latency 3 , 4 , 5
•
OCD (Off-Chip Driver Impedance Adjustment)
•
ODT (On-Die Termination)
•
Auto refresh and self refresh supported
•
8192 refresh cycles / 64ms
•
Serial presence detect with EEPROM
•
DDR2 SDRAM Package: 60ball FBGA
•
133.35 x 30.00 mm form factor
•
Lead-free Products are RoHS compliant
ORDERING INFORMATION
Part Name
Density
Organization
# of
DRAMs
# of
ranks
Materials
HYMP564R728-E3/C4
512MB
64Mx72
9
1
Leaded
HYMP512R728-E3/C4
1GB
128Mx72
18
2
Leaded
HYMP512R724-E3/C4
1GB
128Mx72
18
1
Leaded
HYMP125R72M4-E3/C4
2GB
256Mx72
36
2
Leaded
HYMP564R72P8-E3/C4
512MB
64Mx72
9
1
Lead free
HYMP512R72P8-E3/C4
1GB
128Mx72
18
2
Lead free
HYMP512R72P4-E3/C4
1GB
128Mx72
18
1
Lead free
HYMP125R72MP4-E3/C4
2GB
256Mx72
36
2
Lead free
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.0 / Apr. 2005
1
1240pin Registered DDR2 SDRAM DIMMs
SPEED GRADE & KEY PARAMETERS
E3 (DDR2-400)
C4 (DDR2-533)
Unit
Speed@CL3
400
400
Mbps
Speed@CL4
400
533
Mbps
Speed@CL5
-
-
Mbps
CL-tRCD-tRP
3-3-3
4-4-4
tCK
ADDRESS TABLE
Density
Organization Ranks
SDRAMs
# of
DRAMs
# of row/bank/column Address
Refresh
Method
512MB
64M x 72
1
64Mb x 8
9
14(A0~A13)/2(BA0~BA1)/10(A0~A9)
8K / 64ms
1GB
128M x 72
2
64Mb x 8
18
14(A0~A13)/2(BA0~BA1)/10(A0~A9)
8K / 64ms
1GB
128M x 72
1
128Mb x 4
18
14(A0~A13)/2(BA0~BA1)/11(A0~A9,A11) 8K / 64ms
2GB
256M x 72
2
128Mb x 4
36
14(A0~A13)/2(BA0~BA1)/11(A0~A9,A11) 8K / 64ms
Rev. 1.0 / Apr. 2005
2
1240pin Registered DDR2 SDRAM DIMMs
Input/Output Functional Description
Symbol
Type
Polarity
Pin Description
CK0
IN
Positive
Edge
Positive line of the differential pair of system clock inputs that drives input to the on-DIMM PLL.
CK0
IN
Negative
Negative line of the differential pair of system clock inputs that drives input to the on-DIMM PLL.
Edge
CKE[1:0]
IN
Active
High
Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when low.
By deactivating the clocks, CKE low initiates the Power Down mode or the Self Refresh mode.
S[1:0]
IN
Active
Low
Enables the associated DDR2 SDRAM command decoder when low and disables the command
decoder when high. When the command decoder is disabled, new commands are ignored but
previous operations continue. Rank 0 is selected by S0; Rank 1 is selected by S1
ODT[1:0]
IN
Active
High
On-Die Termination signals.
RAS, CAS, WE
IN
Active
Low
When sampled at the positive rising edge of the clock. RAS,CAS and WE(ALONG WITH S) define
the command being entered.
Vref
Supply
Reference voltage for SSTL18 inputs
VDDQ
Supply
Power supplies for the DDR2 SDRAM output buffers to provide improved noise immunity. For all
current DDR2 unbuffered DIMM designs, VDDQ shares the same power plane as VDD pins.
BA[1:0]
IN
-
Selects which DDR2 SDRAM internal bank of four is activated.
During a Bank Activate command cycle, Address input difines the row address(RA0~RA13)
A[9:0],
A10/AP
A[13:11]
IN
-
DQ[63:0],
CB[7:0]
IN
-
DM[8:0]
IN
Active
High
VDD,VSS
Supply
During a Read or Write command cycle, Address input defines the column address when sampled at the cross point of the rising edge of CK and falling edge of CK. In addition to the column
address, AP is used to invoke autoprecharge operation at the end of the burst read or write
cycle. If AP is high., autoprecharge is selected and BA0-BAn defines the bank to be precharged.
If AP is low, autoprecharge is disabled. During a Precharge command cycle., AP is used in conjunction with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be precharged regardless of the state of BA0-BAn inputs. If AP is low, then BA0-BAn are used to define
which bank to precharge.
Data and Check Bit Input/Output pins.
DM is an input mask signal for write data. Input data is masked when DM is sampled High coincident with that input data during a write access. DM is sampled on both edges of DQS.
Although DM pins are input only, the DM loading matches the DQ and DQS loading.
Power and ground for the DDR2 SDRAM input buffers, and core logic. VDD and VDDQ pins are
tied to VDD/VDDQ planes on these modules.
DQS[17:0]
I/O
Positive
Edge
DQS[17:0]
I/O
Negative
Negative line of the differential data strobe for input and output data
Edge
SA[2:0]
IN
-
These signals are tied at the system planar to either VSS or VDDSPD to configure the serial SPD
EEPROM address range.
SDA
I/O
-
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A resister may
be connected from the SDA bus line to VDDSPD on the system planar to act as a pull up.
SCL
IN
-
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected
from SCL to VDDSPD to act as a pull up on the system board.
VDDSPD
Supply
Positive line of the differential data strobe for input and output data
Power supply for SPD EEPROM. This supply is separate from the VDD/VDDQ power plane.
EEPROM supply is operable from 1.7V to 3.6V.
RESET
IN
The RESET pin is connected to the RST pin on the register and to the OE pin on the PLL. When
low, all register outputs will be driven low and the PLL clocks to the DRAMs and register(s) will
be set to low level (the PLL will remain synchronized with the input clock)
Par_In
IN
Parity bit for the Address and Control bus(“1”. Odd, “0”.Even)
Err_Out
OUT
TEST
Rev. 1.0 / Apr. 2005
Parity error found in the Address and Control bus
Used by memory bus analysis tools(unused on memory DIMMs)
3
1240pin Registered DDR2 SDRAM DIMMs
PIN DESCRIPTION
Pin
Pin Description
Pin
CK0
Clock Input,positive line
ODT[1:0]
CK0
Clock input,negative line
VDDQ
CKE0~CKE1 Clock Enable Input
Pin Description
On Die Termination Inputs
DQs Power Supply
DQ0~DQ63 Data Input/Output
RAS
Row Address Strobe
CB0~CB7
Data check bits Input/Output
CAS
Column Address Strobe
DQS(0~8)
Data strobes
WE
Write Enable
DQS(0~8)
Data strobes,negative line
Chip Select Input
DM(0~8),
Data Maskes/Data strobes
DQS(9~17)
Address input
DQS(9~17) Data strobes,negative line
S0,S1
A0~A9,
A11~A13
A10/AP
Address input/Autoprecharge
RFU
Reserved for Future Use
BA0,BA1
SDRAM Bank Address
NC
No Connect
SCL
Serial Presence Detect(SPD) Clock Input
TEST
Memory bus test tool
(Not Connected and Not Usable on DIMMs)
SDA
SPD Data Input/Output
VDD
Core Power
VDDQ
I/O Power
SA0~SA2
2
E PROM Address Inputs
Par_In
Parity bit for the Address and Control bus
VSS
Ground
Err_Out
Parity error found on the Address
VREF
Input/Output Reference
RESET
Reset Enable
CB0~CB7
VDDSPD
SPD Power
Data Check bit Inputs/Outputs
PIN LOCATION
1 pin
121 pin
Rev. 1.0 / Apr. 2005
Front Side
Back Side
64 pin 65 pin
184 pin 185 pin
120 pin
240 pin
4
1240pin Registered DDR2 SDRAM DIMMs
PIN ASSIGNMENT
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
1
VREF
41
VSS
81
DQ33
121
VSS
161
CB4
201
Name
VSS
2
VSS
42
CB0
82
VSS
122
DQ4
162
CB5
202
DM4/DQS13
3
DQ0
43
CB1
83
DQS4
123
DQ5
163
VSS
203
DQS13
4
DQ1
44
VSS
84
DQS4
124
VSS
164
DM8,DQS17
204
VSS
5
VSS
45
DQS8
85
VSS
125
DM0/DQS9
165
DQS17
205
DQ38
6
DQS0
46
DQS8
86
DQ34
126
DQS9
166
VSS
206
DQ39
7
DQS0
47
VSS
87
DQ35
127
VSS
167
CB6
207
VSS
8
VSS
48
CB2
88
VSS
128
DQ6
168
CB7
208
DQ44
9
DQ2
49
CB3
89
DQ40
129
DQ7
169
VSS
209
DQ45
10
DQ3
50
VSS
90
DQ41
130
VSS
170
VDDQ
210
VSS
11
VSS
51
VDDQ
91
VSS
131
DQ12
171
NC,CKE1
211
DM5/DQS14
DQS14
12
DQ8
52
CKE0
92
DQS5
132
DQ13
172
VDD
212
13
DQ9
53
VDD
93
DQS5
133
VSS
173
A15,NC
213
VSS
14
VSS
54
BA2,NC
94
VSS
134
DM1/DQS10
174
A14,NC
214
DQ46
15
DQS1
55
NC,Err_Out
95
DQ42
135
DQS10
175
VDDQ
215
DQ47
16
DQS1
56
VDDQ
96
DQ43
136
VSS
176
A12
216
VSS
17
VSS
57
A11
97
VSS
137
RFU
177
A9
217
DQ52
18
RESET
58
A7
98
DQ48
138
RFU
178
VDD
218
DQ53
19
NC
59
VDD
99
DQ49
139
VSS
179
A8
219
VSS
20
VSS
60
A5
100
VSS
140
DQ14
180
A6
220
RFU
21
DQ10
61
A4
101
SA2
141
DQ15
181
VDDQ
221
RFU
22
DQ11
62
VDDQ
102
NC(TEST)
142
VSS
182
A3
222
VSS
23
VSS
63
A2
103
VSS
143
DQ20
183
A1
223
DM6/DQS15
64
184
VDD
224
NC,DQS15
104
DQS6
144
DQ21
105
DQS6
145
VSS
VSS
106
VSS
146
DM2/DQS11
185
VSS
107
DQ50
147
DQS11
VDD
108
DQ51
148
NC,Err_Out
109
VSS
149
VDD
110
DQ56
150
A10/AP
111
DQ57
151
112
VSS
113
DQS7
WE
114
CAS
115
24
DQ16
25
DQ17
VDD
26
VSS
65
27
DQS2
66
28
DQS2
67
29
VSS
68
30
DQ18
69
31
DQ19
70
32
VSS
71
BA0
33
DQ24
72
VDDQ
34
DQ25
73
35
VSS
74
Key
Key
225
VSS
CK0
226
DQ54
186
CK0
227
DQ55
VSS
187
VDD
228
VSS
DQ22
188
A0
229
DQ60
DQ23
189
VDD
230
DQ61
VSS
190
BA1
231
VSS
152
DQ28
191
VDDQ
232
DM7/DQS16
153
DQ29
192
RAS
233
NC,DQS16
DQS7
154
VSS
193
S0
234
VSS
VSS
155
DM3/DQS12
194
VDDQ
235
DQ62
DQ63
36
DQS3
75
VDDQ
116
DQ58
156
DQS12
195
ODT0
236
37
DQS3
76
NC, S1
117
DQ59
157
VSS
196
A13,NC
237
VSS
38
VSS
77
NC, ODT1
118
VSS
158
DQ30
197
VDD
238
VDDSPD
39
DQ26
78
VDDQ
119
SDA
159
DQ31
198
VSS
239
SA0
40
DQ27
79
VSS
120
SCL
160
VSS
199
DQ36
240
SA1
80
DQ32
200
DQ37
NC= No Connect, RFU= Reserved for Future Use.
Note:
1. RESET(Pin 18) is connected to both OE of PLL and Reset of register.
2. NC/Err_out (Pin 55) and NC/Par_In(Pin68) are for optional function to check address and command parity.
3. The Test pin(Pin 102) is reserved for bus analysis probes and is not connected on normal memory modules(DIMMs)
Rev. 1.0 / Apr. 2005
5
1240pin Registered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
512MB(64Mbx72) : HYMP564R728
/RS0
DQS4
/DQS4
DM4,DQS13
/DQS13
DQS0
/DQS0
DM0,DQS9
/DQS9
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DM
RDQS
I/O 0
I/O 1
I/O 2
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
NU
/RDQS
/CS
DQS
DM
RDQS
I/O 0
I/O 1
I/O 2
/DQS
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
D0
I/O
I/O
I/O
I/O
I/O
NU
/RDQS
/CS
DQS
/DQS
DQS
/DQS
DQS
/DQS
DQS
/DQS
D4
3
4
5
6
7
DQS5
/DQS5
DM5,DQS14
/DQS14
DQS1
/DQS1
DM1,DQS10
/DQS10
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DM
RDQS
I/O 0
I/O 1
I/O 2
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
NU
/RDQS
/CS
DQS
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
D1
DM
RDQS
I/O 0
I/O 1
I/O 2
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
NU
/RDQS
/CS
DQS
D5
3
4
5
6
7
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
D2
NU
/RDQS
DM
RDQS
I/O 0
I/O 1
I/O 2
/DQS
I/O
I/O
I/O
I/O
I/O
/CS
D6
3
4
5
6
7
DQS7
/DQS7
DM7,DQS16
/DQS16
DQS3
/DQS3
DM3,DQS12
/DQS12
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
I/O
I/O
I/O
I/O
I/O
/CS
DQS6
/DQS6
DM6,DQS15
/DQS15
DQS2
/DQS2
DM2,DQS11
/DQS11
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
NU
/RDQS
DM
RDQS
I/O 0
I/O 1
I/O 2
/DQS
DM
RDQS
I/O 0
I/O 1
I/O 2
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
NU
/RDQS
/CS
DQS
DM
RDQS
I/O 0
I/O 1
I/O 2
/DQS
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
D3
DQS8
/DQS8
DM8DQS17
/DQS17
I/O
I/O
I/O
I/O
I/O
NU
/RDQS
/CS
D7
3
4
5
6
7
Serial PD
VDD SPD
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
DM
RDQS
I/O 0
I/O 1
I/O 2
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
R
E
G
I
S
T
E
R
/CS0*
BA0 to BA1
A0 to A13
/RAS
/CAS
CKE0
NU
/RDQS
/CS
DQS
/DQS
SCL
SDA
SCL
W
P
D8
/RS0 to /CS ==> /CS: SDRAMs D0 to D8
VDD /
VDDQ
A0
A1
A2
SA0
SA1
SA2
CK0
RBA0 to RBA1 ==> BA0 to BA1: SDRAMs D0 to D8
/CK0
Serial PD
SDA
U0
DO-D8
VREF
DO-D8
VSS
DO-D8
P
L
L
PCK0 to PCK6, PCK8,PCK9 ==> CK: SDRAMs D0 toD8
OE
/PCK7 ==> /CK: Register
/PCK0 to /PCK6, /PCK8, /PCK9 ==> /CK: SDRAMs D0 toD8
/RA0 to RA13 ==> A0 to A13: SDRAMs D0 to D8
/RRAS ==>/RAS: SDRAMs D0 to D8
/RCAS ==>/CAS: SDRAMs D0 to D8
PCK7 ==> CK: Register
/RESET
RCKE0 ==> CKE: SDRAMs D0 to D8
/RWE ==> /WE: SDRAMs D0 to D8
/WE
ODT0
RODT0 ==> ODT0: SDRAMs D0 to D8
/RESET
PCK7
/RST
Notes :
1. Register values are 22 Ohms.
/PCK7
* : /S0 connects to D/CS and VDD connects to /CSR on register.
Rev. 1.0 / Apr. 2005
6
1240pin Registered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
1GB(128Mbx72) : HYMP512R728
/ RS1
/ RS0
DQS0
/ DQS0
DM0, DQS9
/DQS9
DQS4
/ DQS4
DM4, DQS13
/DQS13
DM
NU
/ CS
RDQS / RDQS
I/ O 0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS / DQS
I/ O 1
DM
NU / CS
RDQS / RDQS
I/ O 0
DQS / DQS
I/ O 1
D0
I/ O 2
I/ O 2
I/ O 3
I/ O 3
I/ O 4
I/ O 4
I/ O 5
I/ O 5
I/ O 6
I/ O 7
I/ O 6
I/ O 7
DM
NU
/ CS
RDQS / RDQS
I/ O 0
DQ 32
DQ 33
DQ 34
DQ 35
DQ 36
DQ 37
DQ 38
DQ39
D9
DQ1
/ DQ1
DM1,DQS10
/DQS10
DQS / DQS
I/ O 1
DM
NU / CS
RDQS / RDQS
I/ O 0
DQS / DQS
I/ O 1
D4
I/ O 2
I/ O 2
I/ O 3
I/ O 3
I/ O 4
I/ O 4
I/ O 5
I/ O 5
I/ O 6
I/ O 7
I/ O 6
I/ O 7
D 13
DQS5
/ DQS5
DM5, DQS14
/DQS14
DM
NU
/ CS
RDQS / RDQS
I/ O 0
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS2
/ DQS2
DM 2,DQS11
/DQS11
DQS / DQS
I/ O 1
I/ O 2
I/ O 3
I/ O 3
I/ O 4
I/ O 4
I/ O 5
I/ O 5
I/ O 6
I/ O 7
I/ O 6
I/ O 7
DM
/ CS
NU
RDQS / RDQS
I/ O 0
DQS / DQS
I/ O 1
z
DM
NU / CS
RDQS / RDQS
I/ O 0
I/ O 2
I/ O 3
I/ O 3
I/ O 4
I/ O 4
I/ O 5
I/ O 5
I/ O 6
I/ O 7
I/ O 6
I/ O 7
DM
/ CS
NU
RDQS / RDQS
I/ O 0
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
D 10
DQS / DQS
I/ O 1
D 11
DM
NU / CS
RDQS / RDQS
I/ O 0
DQ 40
DQ 41
DQ 42
DQ 43
DQ 44
DQ 45
DQ 46
DQ47
DQS6
/ DQS6
DM6, DQS15
/DQS15
I/ O 2
I/ O 3
I/ O 3
I/ O 4
I/ O 4
I/ O 5
I/ O 5
I/ O 6
I/ O 7
I/ O 6
I/ O 7
DQS8
/ DQS8
DM8,DQS17
/DQS17
SCL
DM
NU / CS
RDQS / RDQS
I/ O 0
DQS / DQS
I/ O 1
DM
NU / CS
RDQS / RDQS
I/ O 0
I/ O 4
I/ O 4
I/ O 5
I/ O 5
I/ O 6
I/ O 7
I/ O 6
I/ O 7
DQS / DQS
D8
I/ O 2
I/ O 3
I/ O 3
I/ O 4
I/ O 4
I/ O 5
I/ O 5
I/ O 6
I/ O 7
I/ O 6
I/ O 7
D 14
DM
NU / CS
RDQS / RDQS
I/ O 0
I/ O 2
I/ O 3
I/ O 3
I/ O 4
I/ O 4
I/ O 5
I/ O 5
I/ O 6
I/ O 7
I/ O 6
I/ O 7
DM
NU / CS
RDQS / RDQS
I/ O 0
DQS / DQS
I/ O 1
DQS / DQS
D 15
DM
NU / CS
RDQS / RDQS
I/ O 0
DQS / DQS
I/ O 1
D7
I/ O 2
I/ O 2
I/ O 3
I/ O 3
I/ O 4
I/ O 4
I/ O 5
I/ O 5
I/ O 6
I/ O 7
I/ O 6
I/ O 7
SCL
D 16
V DD SPD
Serial
PD
V DD /V DDQ
DO-D 17
V REF
DO-D 17
V SS
DO-D 17
SDA
Serial PD
DQS / DQS
A0
A1
A1
SA0
SA1
SA2
I/ O 1
I/ O 2
DQS / DQS
I/ O 1
D6
I/ O 2
WP
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
I/ O 3
I/ O 1
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ 63
D 12
I/ O 2
I/ O 3
DM
NU / CS
RDQS / RDQS
I/ O 0
DQS / DQS
DM
NU / CS
RDQS / RDQS
I/ O 0
I/ O 1
D5
I/ O 2
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ 55
DQS7
/ DQS7
DM7, DQS16
/DQS16
I/ O 1
D3
I/ O 2
DQS / DQS
I/ O 1
DQS / DQS
I/ O 1
D2
I/ O 2
DM
NU / CS
RDQS / RDQS
I/ O 0
DQS / DQS
I/ O 1
D1
I/ O 2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
/ DQS3
DM3,DQS12
/DQS12
DM
NU / CS
RDQS / RDQS
I/ O 0
D 17
CK0
/CK0
PCK0 to PCK6, PCK8,PCK9 = > CK : SDRAMx D0-D17
P
L
L
/PCK0 to /PCK6, /PCK8,/PCK9 = > /CK : SDRAMx D0-D17
PCK7 = > CK: Register
/S0
/S1
BA0 to BA1
A0 to A13
/RAS
/CAS
/WE
CKE0
CKE1
ODT0
ODT1
/RESET
PCK7
Rev. 1.0 / Apr. 2005
1:2
R
E
G
I
S
T
E
R
/RS0 to /CS : SDRAMs D0 - D8
/RESET
OE
/PCK7 = > /CK: Register
/RS1 to /CS : SDRAMs D9 - D17
/RBA0 to RBA1 = > BA0 -BA1 : SDRAMs D0-D17
/RA0 to RA12 = > A0 -A12 : SDRAMs D0-D17
/RRAS = > /RAS: SDRAMs D0-D17
Notes:
/RCAS = > /CAS: SDRAMs D0-D17
1. Register values are 22 Ohms +/- 5%.
2. /RS0 and /RS1 alternate between the back and front sides of the DIMM
/RWE = > /WE: SDRAMs D0-D17
RCKE0 = > CKE0: SDRAMs D0-D8
RCKE1 = > CKE1: SDRAMs D9-D17
RODT0 = > ODT0: SDRAMs D0-D8
RODT1 = > ODT1: SDRAMs D9-D17
/ RST
/PCK7
7
1240pin Registered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
1GB(64Mbx72) : HYMP512R724
VSS
/ RS0
/ D Q S9
D Q S9
/ D QS0
DQ S0
D Q S / D QS / C S
I/ O0
I/O1
D0
I/O2
I/O3
DQ0
D Q1
D Q2
D Q3
DM
D Q4
D Q5
D Q6
D Q7
Serial PD
DM
D Q S / DQ S / C S
I/O0
I/O1
D1
I/O2
I/O3
D Q8
DQ9
DQ10
D Q11
DM
D Q12
DQ13
DQ14
D Q15
D Q S / D QS / CS
I/O0
I/O1
D 10
I/O2
I/O3
D Q S / DQ S / C S
I/O0
I/O1
D2
I/O2
I/O3
D Q16
D Q17
D Q18
D Q19
DM
DQ20
D Q21
D Q22
DQ23
SD A
U0
W
P
A0
A1
A2
SA0
SA1
SA 2
DM
V DD SPD
Serial
PD
V D D /V DD Q
DO-D 17
/ D QS11
D Q S11
/ D Q S2
D Q S2
SD A
SC L
SC L
/ D QS10
D Q S10
/ D Q S1
D Q S1
D Q S / D QS / CS
I/O0
I/O1
D 11
I/O2
I/O3
DM
D Q S / D QS / CS
I/O0
I/O1
D 12
I/O2
I/O3
DM
D Q S / D QS / CS
I/O0
I/O1
D 13
I/O2
I/O3
DM
D Q S / D QS / CS
I/O0
I/O1
D 14
I/O2
I/O3
DM
D Q S / D QS / CS
I/O0
I/O1
D 15
I/O2
I/O3
DM
D Q S / D QS / CS
I/O0
I/O1
D 16
I/O2
I/O3
DM
D Q S / D QS / CS
I/O0
I/O1
D 17
I/O2
I/O3
DM
V REF
DO-D 17
V SS
DO-D 17
/ D QS12
D Q S12
/ D Q S3
D Q S3
D Q24
D Q25
D Q26
D Q27
D Q S / DQ S / C S
I/O0
I/O1
D3
I/O2
I/O3
DM
D Q S / DQ S / C S
I/O0
I/O1
D4
I/O2
I/O3
DM
D Q S / DQ S / C S
I/O0
I/O1
D5
I/O2
I/O3
DM
D Q28
D Q29
D Q30
D Q31
/ D QS13
D Q S13
/ D Q S4
D Q S4
DQ32
D Q33
D Q34
DQ35
D Q36
D Q37
D Q38
D Q39
/ D QS14
D Q S14
/ D Q S5
D Q S5
D Q40
D Q41
D Q42
D Q43
DQ44
D Q45
D Q46
D Q47
/ DQ S15
D Q S15
/ D Q S6
D Q S6
D Q48
D Q49
D Q50
D Q51
D Q S / DQ S / C S
I/O0
I/O1
D6
I/O2
I/O3
DM
D Q S / DQ S / C S
I/O0
I/O1
D7
I/O2
I/O3
DM
D Q S / DQ S / C S
I/O0
I/O1
D8
I/O2
I/O3
DM
D Q52
D Q53
D Q54
D Q55
/ DQ S16
D Q S16
/ D Q S7
D Q S7
D Q56
D Q57
D Q58
D Q59
DQ60
D Q61
D Q62
DQ63
/ D QS17
D Q S17
/ D Q S8
D Q S8
C B0
CB1
CB2
C B3
R
E
G
I
S
T
E
R
/C S0*
BA0 to BA 1
A0 to A13
/RAS
/C AS
C KE0
C B4
C B5
C B6
C B7
CK 0
/RS0 to /C S ==> /CS: SD R AM s D 0 to D 17
PC K 0 to PC K 6, PC K 8,PC K9 = > C K : SD R AM x D0-D17
P
L
L
/C K0
/PC K 0 to /PC K 6, /PC K 8,/PC K9 = > /C K : SD R AM x D0-D 17
R BA0 to R BA1 ==> BA0 to BA1: SD R AM s D 0 to D 17
PCK 7 = > CK : R egister
/R A0 to R A13 ==> A0 to A13: SD R AM s D 0 to D 17
/R R AS ==>/R AS: SDR AM s D 0 to D 17
/R ESET
OE
/PC K7 = > /C K : Register
/R C AS ==>/C AS: SDR AM s D 0 to D 17
R C KE0 ==> C KE: SD RAM s D 0 to D 17
/R W E ==> /W E: SD R AM s D 0 to D 17
/W E
O D T0
R O D T0 ==> O D T0: SDR AM s D 0 to D 17
/R ESET
D Q S / DQ S / C S
I/O0
I/O1
D9
I/O2
I/O3
Notes:
1. Resistor values are 22 Ohm s +/- 5% .
/R ST
PC K7
/PCK 7
* /S0 connects to D/CS of Register1 and /CSR of Register2. /CSR of register and D/CS of register2 connects to VDD.
** /RESET,PCK 7 connect to both Registers. Other signals connect to one of two Registers. /S1,CKE1 and ODT1 are NC.
Rev. 1.0 / Apr. 2005
8
1240pin Registered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
2GB(256Mbx72) : HYMP125R72M4
VSS
/ RS0
/ RS1
Serial PD
D QS0
/ D QS0
D Q0
DQ1
DQ2
D Q3
D QS9
/ D QS9
DM / CS DQS / DQS
DM / CS DQS / DQ S
I/O0
I/O1
D0,D 18( DDP)
I/O2
I/O3
D QS1
/ D QS1
DQ8
DQ9
D Q10
D Q11
/ RS0
/ RS1
/ RS0
/ RS1
/ RS0
/ RS1
D Q12
D Q13
D Q14
DQ15
DM / CS DQ S / DQ S
DM / CS DQS
I/O0
I/O1
D 10,D 28( DDP)
I/O2
I/O3
D Q20
D Q21
D Q22
DQ23
Serial
PD
V DD SPD
V DD /V DDQ
DO to D 35
V REF
DO to D 35
V SS
DO to D 35
DM / CS DQ S / DQ S
DM / CS DQS / DQS
I/O0
I/O1
D 11,D 29( DDP)
I/O2
I/O3
D Q28
D Q29
D Q30
DQ31
DM / CS DQ S / DQ S
DM / CS DQS
I/O0
I/O1
D 12,D 30( DDP)
I/O2
I/O3
CB4
CB5
CB6
CB7
DM / CS DQ S / DQ S
DM / CS DQS
I/O0
I/O1
D 17,D 35( DDP)
I/O2
I/O3
D Q36
D Q37
D Q38
DQ39
DM / CS DQ S / DQ S
DM / CS DQS / DQS
I/O0
I/O1
D 13,D 31( DDP)
I/O2
I/O3
D Q44
D Q45
D Q46
DQ47
DM / CS DQ S / DQ S
DM / CS DQS
I/O0
I/O1
D 14,D 32( DDP)
I/O2
I/O3
DQS15
/ D QS15
DM / CS DQS / DQS
DM / CS DQS / DQ S
I/O0
I/O1
D6,D 24( DDP)
I/O2
I/O3
D Q52
D Q53
D Q54
DQ55
DM / CS DQ S / DQ S
DM / CS DQS / DQS
I/O0
I/O1
D 15,D 33( DDP)
I/O2
I/O3
D QS9
/ D QS9
D QS7
/ D QS7
D Q56
DQ57
DQ58
D Q59
A2
SA 2
DQS14
/ D QS14
DM / CS DQS / DQS
DM / CS DQS
I/O0
I/O1
D5,D 23( DDP)
I/O2
I/O3
D QS6
/ D QS6
DQ48
DQ49
DQ50
D Q51
A1
SA 1
DQS13
/ D QS13
DM / CS DQS / DQS
DM / CS DQS / DQ S
I/O0
I/O1
D4,D2( DDP)
I/O2
I/O3
D QS5
/ D QS5
D Q40
DQ41
DQ42
D Q43
A0
SA 0
DQS17
/ D QS17
DM / CS DQS / DQS
DM / CS DQS
I/O0
I/O1
D8,D 26( DDP)
I/O2
I/O3
D QS4
/ D QS4
D Q32
DQ33
DQ34
D Q35
SDA
U0
DQS12
/ D QS12
DM / CS DQS / DQS
DM / CS DQS
I/O0
I/O1
D3,D 21( DDP)
I/O2
I/O3
D QS8
/ D QS8
C B0
CB1
CB2
C B3
W
P
DM / CS DQ S / DQ S
DM / CS DQS / DQS
I/O0
I/O1
D9,D 27( DDP)
I/O2
I/O3
DQS11
/ D QS11
DM / CS DQS / DQS
DM / CS DQS / DQ S
I/O0
I/O1
D2,D 20( DDP)
I/O2
I/O3
D QS3
/ D QS3
DQ24
DQ25
DQ26
D Q27
D Q4
DQ5
DQ6
D Q7
SD A
SCL
DQS10
/ D QS10
DM / CS DQS / DQS
DM / CS DQS
I/O0
I/O1
D1,D 19( DDP)
I/O2
I/O3
D QS2
/ D QS2
D Q16
DQ17
DQ18
D Q19
SC L
DM / CS DQS / DQS
DM / CS DQS
I/O0
I/O1
D7,D 25( DDP)
I/O2
I/O3
/S0*
/S1*
BA0 ? BA 1
A0?A13
/RAS
/CAS
/W E
CKE0
CKE1
1:2
R
E
G
I
S
T
E
R
O DT0
ODT1
/RESET**
PCK7**
D Q60
D Q61
D Q62
DQ63
DM / CS DQ S / DQ S
DM / CS DQS
I/O0
I/O1
D9,D 34( DDP)
I/O2
I/O3
/RS0 to /CS : SDRAM s D 0 ? D 17
/RS 1 to /CS : SDRAM s D 18 ? D35
CK0
/RBA0 ? RBA1 = > BA0 -BA1 : SDRAM s D 0-D35
/CK0
/RA0 ? RA 12 = > A0 -A12 : SDRAM s D 0-D 35
PCK0 to PCK6, PCK8,PCK9 = > CK : SDRAMx D0-D35
P
L
L
/PCK0 to /PCK6, /PCK8,/PC K9 = > /CK : SD RAMx D0-D35
/RRAS = > /RAS: SDRAM s D 0-D 35
PCK7 = > CK: Register
/RCAS = > /CAS: SDRAM s D 0-D35
/RW E = > /W E : SDRAM s D 0-D35
/RESET
OE
/PCK7 = > /CK: Register
RCKE0 = > CKE 0: SDRAM s D 0-D17
RCKE 1 = > CKE1: SDRAM s D 18-D 35
RO DT0 = > O DT0: SDRAM s D 0-D17
RO DT1 = > O DT1: SDRAM s D 18-D35
/ RST
/PCK7**
Notes:
1. Register values are 22 O hm s +/- 5% .
2. /RS 0 and /RS1 alternate between the back and front sides of the DIM M
* /S0 connects to D/CS0 and /S1 connects to D/CS1 on both Registers.
** /RESET,PCK7 and /PCK7 connect to both Registers. Other signals connect to two Registers.
Rev. 1.0 / Apr. 2005
9
1240pin Registered DDR2 SDRAM DIMMs
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Note
VDD
- 1.0 V ~ 2.3 V
V
1
Voltage on VDDL pin relative to Vss
VDDL
-0.5V ~ 2.3 V
V
1
Voltage on VDDQ pin relative to Vss
VDDQ
- 0.5 V ~ 2.3 V
V
1
VIN, VOUT
- 0.5 V ~ 2.3 V
V
1
Storage Temperature
TSTG
-50 ~ +100
Storage Humidity(without condensation)
HSTG
5 to 95
Voltage on VDD pin relative to Vss
Voltage on any pin relative to Vss
C
1
%
1
o
Note :
1. Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device
functional operation at or above the conditions indicated is not implied. Expousure to absolute maximum rating con
ditions for extended periods may affect reliablility.
OPERATING CONDITIONS
Parameter
Symbol
Rating
Units
DIMM Operating temperature(ambient)
TOPR
0 ~ +55
oC
DIMM Barometric Pressure(operating & storage)
PBAR
105 to 69
K Pascal
DRAM Component Case Temperature Range
TCASE
0 ~+95
o
C
Notes
1
2
Note :
1. Up to 9850 ft.
2. If the DRAM case temperature is Above 85oC, the Auto-Refresh command interval has to be reduced to
tREFI=3.9us. For Measurement conditions of TCASE, please refer to the JEDEC document JESD51-2.
DC OPERATING CONDITIONS (SSTL_1.8)
Parameter
Min
Max
Unit
VDD
1.7
1.9
V
VDDL
1.7
1.9
V
VDDQ
1.7
1.9
V
1
Input Reference Voltage
VREF
0.49 x VDDQ
0.51 x VDDQ
V
2
EEPROM Supply Voltage
VDDSPD
1.7
3.6
V
Termination Voltage
VTT
VREF-0.04
VREF+0.04
V
Power Supply Voltage
Symbol
Note
3
Note :
1.
2.
3.
VDDQ must be less than or equal to VDD.
Peak to peak ac noise on VREF may not exeed +/-2% VREF(dc)
VTT of transmitting device must track VREF of receiving device.
Rev. 1.0 / Apr. 2005
10
1240pin Registered DDR2 SDRAM DIMMs
INPUT DC LOGIC LEVEL
Parameter
Symbol
Min
Max
Unit
Input High Voltage
VIH(DC)
VREF + 0.125
VDDQ + 0.3
V
Input Low Voltage
VIL(DC)
-0.30
VREF - 0.125
V
Min
Max
Unit
Notes
INPUT AC LOGIC LEVEL
Parameter
Symbol
AC Input logic High
VIH(AC)
VREF + 0.250
-
V
AC Input logic Low
VIL(AC)
-
VREF - 0.250
V
Notes
AC INPUT TEST CONDITIONS
Symbol
Condition
Value
Units
Notes
0.5 * VDDQ
V
1
VREF
Input reference voltage
VSWING(MAX)
Input signal maximum peak to peak swing
1.0
V
1
SLEW
Input signal minimum slew rate
1.0
V/ns
2, 3
Notes:
1.
Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device
2.
The input signal minimum slew rate is to be maintained over the range from VREF to VIH(ac) min for rising edges
and the range from VREF to VIL(ac) max for falling edges as shown in the below figure.
3.
AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions
under test.
and VIH(ac) to VIL(ac) on the negative transitions.
VDDQ
VIH(ac) min
VIH(dc) min
VSWING(MAX)
VREF
VIL(dc) max
VIL(ac) max
VSS
delta TF
Falling Slew =
delta TR
VREF - VIL(ac) max
delta TF
Rising Slew =
VIH(ac)min - VREF
delta TR
< Figure : AC Input Test Signal Waveform>
Rev. 1.0 / Apr. 2005
11
1240pin Registered DDR2 SDRAM DIMMs
Differential Input AC logic Level
Symbol
Parameter
Min.
Max.
Units
Note
VID (ac)
ac differential input voltage
0.5
VDDQ + 0.6
V
1
VIX (ac)
ac differential cross point voltage
0.5 * VDDQ - 0.175
0.5 * VDDQ + 0.175
V
2
1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS,
LDQS, UDQS and UDQS.
2. VID(DC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input (such as
CK, DQS, LDQS or UDQS) level and VCP is the complementary input (such as CK, DQS, LDQS or UDQS) level. The minimum value is equal to VIH(DC) - VIL(DC).
VDDQ
VTR
VID
Crossing point
VIX or VOX
VCP
VSSQ
< Differential signal levels >
Notes:
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal
(such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS).
The minimum value is equal to V IH(AC) - VIL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to
track variations in VDDQ . VIX(AC) indicates the voltage at whitch differential input signals must cross.
DIFFERENTIAL AC OUTPUT PARAMETERS
Symbol
Parameter
Min.
Max.
Units
Note
VOX (ac)
ac differential cross point voltage
0.5 * VDDQ - 0.125
0.5 * VDDQ + 0.125
V
1
Note:
1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to
track variations in VDDQ . VOX(AC) indicates the voltage at whitch differential output signals must cross.
Rev. 1.0 / Apr. 2005
12
1240pin Registered DDR2 SDRAM DIMMs
OUTPUT BUFFER LEVELS
OUTPUT AC TEST CONDITIONS
Symbol
Parameter
SSTL_18
Units
Notes
VOTR
Output Timing Measurement Reference Level
0.5 * VDDQ
V
1
Notes:
1. The VDDQ of the device under test is referenced.
OUTPUT DC CURRENT DRIVE
Symbol
Parameter
SSTl_18
Units
Notes
IOH(dc)
Output Minimum Source DC Current
- 13.4
mA
1, 3, 4
IOL(dc)
Output Minimum Sink DC Current
13.4
mA
2, 3, 4
Notes:
1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and
VDDQ - 280 mV.
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.
3. The dc value of VREF applied to the receiving device is set to VTT
4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device
drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an
SSTL_18 receiver.
The actual current values are derived by shifting the desired driver operating point along a 21 ohm load line to define
a convenient driver current for measurement.
Rev. 1.0 / Apr. 2005
13
1240pin Registered DDR2 SDRAM DIMMs
PIN Capacitance (VDD=1.8V,VDDQ=1.8V, TA=25℃. f=1MHz )
512MB : HYMP564R72[P]8
Pin
Symbol
Min
Max
Unit
CK0, CK0
CCK
7
11
pF
CKE, ODT
CI1
8
12
pF
CS
CI2
8
12
pF
Address, RAS, CAS, WE
CI3
8
12
pF
DQ, DM, DQS, DQS
CIO
6
9
pF
Symbol
Min
Max
Unit
CK0, CK0
CCK
7
11
pF
CKE, ODT
CI1
8
12
pF
CS
CI2
10
15
pF
Address, RAS, CAS, WE
CI3
8
12
pF
DQ, DM, DQS, DQS
CIO
8
13
pF
Symbol
Min
Max
Unit
CK0, CK0
CCK
7
11
pF
CKE, ODT
CI1
8
12
pF
CS
CI2
10
15
pF
Address, RAS, CAS, WE
CI3
8
12
pF
DQ, DM, DQS, DQS
CIO
6
9
pF
Symbol
Min
Max
Unit
CK0, CK0
CCK
9.5
14
pF
CKE, ODT
CI1
10.5
16
pF
CS
CI2
10.5
16
pF
Address, RAS, CAS, WE
CI3
10.5
16
pF
DQ, DM, DQS, DQS
CIO
17
21
pF
1GB : HYMP512R72[P]8
Pin
1GB : HYMP512R72[P]4
Pin
2GB : HYMP125R72M[P]4
Pin
Note :
1. Pins not under test are tied to GND.
2. These value are guaranteed by design and tested on a sample basis only.
Rev. 1.0 / Apr. 2005
14
1240pin Registered DDR2 SDRAM DIMMs
IDD SPECIFICATIONS (TCASE : 0 to 95oC)
512MB, 64M x 72 Registered DIMM : HYMP564R72[P]8
Symbol
E3(DDR2 400@CL 3)
C4(DDR2 533@CL 4)
Unit
IDD0
1370
1460
mA
IDD1
1460
1550
mA
IDD2P
704
713
mA
IDD2Q
965
1010
mA
IDD2N
1010
1055
mA
IDD3P(F)
830
875
mA
IDD3P(S)
695
704
mA
IDD3N
1145
1235
mA
IDD4R
1820
2090
mA
IDD4W
2000
2270
mA
IDD5B
2135
2225
mA
IDD6
500
500
mA
IDD7
2630
2630
mA
Notes
1
1GB, 128M x 72 Registered DIMM : HYMP512R72[P]8
Symbol
E3(DDR2 400@CL3)
C4(DDR2 533@CL 4)
Unit
IDD0
1865
2045
mA
IDD1
1955
2135
mA
IDD2P
758
776
mA
IDD2Q
1280
1370
mA
IDD2N
1370
1460
mA
IDD3P(F)
1010
1100
mA
IDD3P(S)
740
758
mA
IDD3N
1640
1820
mA
IDD4R
2315
2675
mA
IDD4W
2495
2855
mA
IDD5B
2630
2810
mA
IDD6
549
549
mA
IDD7
3125
3215
mA
Notes
1
Notes :
1. IDD6 current alues are guaranted up to Tcase of 85oC max.
Rev. 1.0 / Apr. 2005
15
1240pin Registered DDR2 SDRAM DIMMs
1GB, 128M x 72 Registered DIMM : HYMP512R72[P]4
Symbol
E3(DDR2 400@CL 3)
C4(DDR2 533@CL 4)
Unit
IDD0
2090
2270
mA
IDD1
2270
2450
mA
IDD2P
758
776
mA
IDD2Q
1280
1370
mA
IDD2N
1370
1460
mA
IDD3P(F)
1010
1100
mA
IDD3P(S)
740
758
mA
IDD3N
1640
1820
mA
IDD4R
2990
3530
mA
IDD4W
2990
3170
mA
IDD5B
3620
3800
mA
IDD6
549
549
mA
IDD7
4610
4610
mA
note
1
2GB, 256M x 72 Registered DIMM : HYMP125R72M[P]4
Symbol
E3(DDR2 400@CL 3)
C4(DDR2 533@CL 4)
Unit
IDD0
3080
3400
mA
IDD1
3260
3620
mA
IDD2P
866
902
mA
IDD2Q
1910
2090
mA
IDD2N
2090
2270
mA
IDD3P(F)
1370
1550
mA
IDD3P(S)
830
866
mA
IDD3N
2630
2990
mA
IDD4R
3980
4700
mA
IDD4W
4340
5060
mA
IDD5B
4610
4970
mA
IDD6
648
648
mA
IDD7
5600
5780
mA
note
1
Note :
1. IDD6 current alues are guaranted up to Tcase of 85℃ max.
Rev. 1.0 / Apr. 2005
16
1240pin Registered DDR2 SDRAM DIMMs
IDD Meauarement Conditions
Symbol
Conditions
Units
IDD0
Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD);CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCHING;Data bus
inputs are SWITCHING
mA
IDD1
Operating one bank active-read-precharge curren ; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0; tCK =
tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD) ; CKE is HIGH, CS is HIGH between valid
commands ; Address bus inputs are SWITCHING ; Data pattern is same as IDD4W
mA
IDD2P
Precharge power-down current ; All banks idle ; tCK = tCK(IDD) ; CKE is LOW ; Other control and address
bus inputs are STABLE; Data bus inputs are FLOATING
mA
IDD2Q
Precharge quiet standby current;All banks idle; tCK = tCK(IDD);CKE is HIGH, CS is HIGH; Other control and
address bus inputs are STABLE; Data bus inputs are FLOATING
mA
IDD2N
Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and
address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD3P
Active power-down current; All banks open; tCK = tCK(IDD); CKE is LOW; Fast PDN Exit MRS(12) = 0
Other control and address bus inputs are STABLE; Data bus inputs are FLOATSlow PDN Exit MRS(12) = 1
ING
IDD3N
Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP =tRP(IDD); CKE is
HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
mA
IDD4W
Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK
= tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD4R
Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD),
AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING;; Data pattern is same as IDD4W
mA
IDD5B
Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is
HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
mA
IDD6
Self refresh current; CK and CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are FLOATING; Data
bus inputs are FLOATING. IDD6 current values are guaranted up to Tcase of 85℃ max.
mA
IDD7
Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD),
AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is
HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is
same as IDD4R; - Refer to the following page for detailed timing conditions
mA
mA
mA
Notes:
1. IDD specifications are tested after the device is properly initialized
2. Input slew rate is specified by AC Parametric Test Condition
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with
all combinations of EMRS bits 10 and 11.
5. Definitions for IDD
LOW is defined as Vin ≤ VILAC(max)
HIGH is defined as Vin ≥ VIHAC(min)
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and
control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock)
for DQ signals not including masks or strobes.
Rev. 1.0 / Apr. 2005
17
1240pin Registered DDR2 SDRAM DIMMs
Electrical Characteristics & AC Timings
Speed Bins and CL,tRCD,tRP,tRC and tRAS for Corresponding Bin
Speed
DDR2-533 (C4)
DDR2-400 (E3)
Unit
Bin(CL-tRCD-tRP)
4-4-4
3-3-3
Parameter
min
min
CAS Latency
4
3
tCK
tRCD
15
15
ns
tRP
15
15
ns
tRC
60
55
ns
tRAS
45
40
ns
AC Timing Parameters by Speed Grade
Parameter
Symbol
DDR2-400
DDR2-533
Min
Max
Min
Max
Unit Note
Data-Out edge to Clock edge Skew
tAC
-600
600
-500
500
ps
DQS-Out edge to Clock edge Skew
tDQSCK
-500
500
-450
450
ns
Clock High Level Width
tCH
0.45
0.55
0.45
0.55
CK
Clock Low Level Width
tCL
0.45
0.55
0.45
0.55
CK
Clock Half Period
tHP
min
(tCL,tCH)
-
min
(tCL,tCH)
-
ns
System Clock Cycle Time
tCK
5000
8000
3750
8000
ps
DQ and DM input setup time
tDS
150
-
100
-
ps
1
DQ and DM input hold time
tDH
275
-
225
-
ps
1
DQ and DM input setup time(single-ended strobe)
tDS1
25
-
-25
-
ps
1
DQ and DM input hold time(single-ended strobe)
tDH1
25
-
-25
-
ps
1
Control & Address input Pulse Width for each input
tIPW
0.6
-
0.6
-
tCK
DQ and DM input pulse witdth for each input pulse
width for each input
tDIPW
0.35
-
0.35
-
tCK
tHZ
-
tAC max
-
tAC max
ps
Data-out high-impedance window from CK, /CK
DQS low-impedance time from CK/CK
tLZ(DQS)
tAC min
tAC max
tAC min
tAC max
ps
DQ low-impedance time from CK/CK
tLZ(DQ)
2*tAC min
tAC max
2*tAC min
tAC max
ps
DQS-DQ skew for DQS and associated DQ signals
tDQSQ
-
350
-
300
ps
DQ hold skew factor
tQHS
-
450
-
400
ps
DQ/DQS output hold time from DQS
tQH
tHP - tQHS
-
tHP - tQHS
-
ps
First DQS latching transition to associated clock edge
tDQSS
-0.25
+0.25
-0.25
+0.25
tCK
DQS input high pulse width
tDQSH
0.35
-
0.35
-
tCK
DQS input low pulse width
tDQSL
0.35
-
0.35
-
tCK
DQS falling edge to CK setup time
tDSS
0.2
-
0.2
-
tCK
DQS falling edge hold time from CK
tDSH
0.2
-
0.2
-
tCK
Mode register set command cycle time
tMRD
2
-
2
-
tCK
Write postamble
tWPST
0.4
0.6
0.4
0.6
tCK
Write preamble
tWPRE
0.35
-
-
tCK
Rev. 1.0 / Apr. 2005
0.35
18
1240pin Registered DDR2 SDRAM DIMMs
- Continued Parameter
Symbol
DDR2-400
DDR2-533
Min
Max
Min
Max
Unit Note
Address and control input setup time
tIS
350
-
250
-
Address and control input hold time
tIH
475
-
375
-
ps
ps
Read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
tCK
-
105
-
ns
Auto-Refresh to Active/Auto-Refresh command
period
Row Active to Row Active Delay for 1KB page size
tRFC
105
tRRD
7.5
-
7.5
-
ns
Row Active to Row Active Delay for 2KB page size
tRRD
10
-
10
-
ns
Four Activate Window for 1KB page size
tFAW
37.5
-
37.5
-
ns
Four Activate Window for 2KB page size
tFAW
50
-
50
-
ns
CAS to CAS command delay
tCCD
2
Write recovery time
Auto Precharge Write Recovery + Precharge Time
tWR
tDAL
15
tWR+tRP
-
15
tWR+tRP
-
ns
tCK
Write to Read Command Delay
tWTR
10
-
7.5
-
ns
Internal read to precharge command delay
2
tCK
tRTP
7.5
7.5
Exit self refresh to a non-read command
tXSNR
tRFC + 10
tRFC + 10
Exit self refresh to a read command
tXSRD
200
-
200
-
tCK
tXP
2
-
2
-
tCK
tXARD
2
2
tCK
tXARDS
6 - AL
6 - AL
tCK
tCKE
3
3
tCK
Exit precharge power down to any non-read
command
Exit active power down to read command
Exit active power down to read command
(Slow exit, Lower power)
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
tAOND
tAON
ODT turn-on
ODT turn-on(Power-Down mode)
tAONPD
tAOFD
ODT turn-off delay
tAOF
ODT turn-off
ODT turn-off (Power-Down mode)
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains ON after CKE
asynchronously drops LOW
Average periodic Refresh Interval
t
AOFPD
tANPD
tAXPD
tOIT
tDelay
tREFI
tREFI
2
2
2
ns
ns
2
tAC(min) tAC(max)+1 tAC(min) tAC(max)+1
tAC(min)+
2tCK+
tAC(min)+
2tCK+
2
tAC(max)+1
2
tAC(max)+1
2.5
2.5
2.5
2.5
tAC(max)
tAC(max)
tAC(min)
tAC(min)
+ 0.6
+ 0.6
tAC(min)+ 2.5tCK+tAC tAC(min)+ 2.5tCK+tAC
2
(max)+1
2
(max)+1
3
3
8
8
0
12
0
12
tIS+tCK+tI
tIS+tCK+tI
H
H
7.8
7.8
3.9
3.9
tCK
ns
ns
tCK
ns
ns
tCK
tCK
ns
ns
us
us
2
3
Notes :
1. For details and notes, please refer to the relevant HYNIX component datasheet(HY5PS12[4/8]21(L)F).
2. 0°C ≤ TCASE ≤ 85°C
3. 85°C ＜ TCASE ≤ 95°C
Rev. 1.0 / Apr. 2005
19
1240pin Registered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
64Mx72 (1 rank) - HYMP564R72[P]8
Front
Side
2. 7 max
133.35
R
E
G
I
S
T
E
R
4.0±0.1
( Front)
30.0
PLL
Detail-A
Detail-B
1. 27 ± 0.10
5.175
63.0
5.0
55.0
5.175
10.0
17.80
Back
3.0
3.0
1.0
Detail of Contacts B
2.50
3.80
2.50 ±
0.20
0.20
Detail of Contacts A
0.8 ± 0.05
1.50 ± 0.10
5.00
Note) All dimensions are typical millimeter scale unless otherwise stated.
Rev. 1.0 / Apr. 2005
20
1240pin Registered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
128Mx72 (2 ranks) - HYMP512R72[P]8
Front
Side
133.35
4.0 max
R
E
G
I
S
T
E
R
4.0±0.1
30.0
PLL
Detail-A
Detail-B
1.27 ± 0.10
5.175
63.0
5.0
55.0
5.175
17.80
10.0
Back
R
E
G
I
S
T
E
R
3.0
3.0
1.0
Detail of Contacts B
2.50
3.80
2.50 ±
0.20
0.20
Detail of Contacts A
0.8± 0.05
1.50 ± 0.10
5.00
Note) All dimensions are typical millimeter scale unless otherwise stated.
Rev. 1.0 / Apr. 2005
21
1240pin Registered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
128Mx72 (1 rank) - HYMP512R72[P]4
Front
Side
133.35
4.0 max
R
E
G
I
S
T
E
R
4.0±0.1
30.0
PLL
Detail-A
Detail-B
1.27 ± 0.10
5.175
63.0
5.0
55.0
5.175
17.80
10.0
Back
R
E
G
I
S
T
E
R
3.0
3.0
1.0
Detail of Contacts B
2.50
3.80
2.50 ±
0.20
0.20
Detail of Contacts A
0.8± 0.05
1.50 ± 0.10
5.00
Note) All dimensions are typical millimeter scale unless otherwise stated.
Rev. 1.0 / Apr. 2005
22
1240pin Registered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
256Mx72 (2 ranks) - HYMP125R72M[P]4
Front
Side
133.35
4. 0 max
R
E
G
I
S
T
E
R
4.0±0.1
30.0
PLL
Detail-A
Detail-B
1. 27 ± 0.10
5.175
63.0
5.0
55.0
5.175
10.0
17.80
Back
R
E
G
I
S
T
E
R
3.0
3.0
1.0
Detail of Contacts B
2.50
3.80
2.50 ±
0.20
0.20
Detail of Contacts A
0.8 ± 0.05
1.50 ± 0.10
5.00
Note) All dimensions are typical millimeter scale unless otherwise stated.
Rev. 1.0 / Apr. 2005
23
1240pin Registered DDR2 SDRAM DIMMs
REVISION HISTORY
Revision
1.0
History
Date
First Version Release - Data sheet coverage changed from an individual
module part to a component based module family.
Dec. 2004
Added VDDL spec, corrected tDS & tDH spec values.
Apr. 2005
Rev. 1.0 / Apr. 2005
Remark
24