AMS AMS1067

AMS1067
General Description
Features
The AMS1067 is a monolithic step down switch
mode regulator with a built in internal Power
MOSFET. It achieves 2A continuous output
current over a wide input supply range with
excellent load and line regulation.
Current mode operation provides fast transient
response and eases loop stabilization.
Fault condition protection includes cycle-bycycle current limiting and thermal shutdown. In
shutdown mode the regulator draws 25µA of
supply current.
The AMS1067 requires a minimum number of
readily available standard external components.
AMS1067
SOP8 / ESOP8
Applications
PC Monitors
Distributed Power Systems
Battery Charger
Pre-Regulator for Linear Regulators
Ordering Information
Part Number * Package
2A Output Current
0.22Ω Internal Power MOSFET Switch
Stable with Low ESR Output Ceramic
capacitors
Up to 95% Efficiency
20µA Shutdown Mode
Fixed 420KHz frequency
Thermal Shutdown
Cycle-by-cycle over current protection
Wide 4.75 to 18V operating input range
Output Adjustable from 1.22 to 15V
Programmable under voltage lockout
Available in SOP8 / ESOP8
Temperature
-20 to +85 °C
Typical Application Circuit
INPUT
4.75 to 15V
ENABLE
SHUTDOWN
OUTPUT
2.5V/2A
AMS1067
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AMS1067
Absolute Maximum Ratings (Note 1)
Input Voltage (VIN)
Switch Voltage (VSW)
Boot Strap Voltage (VBS)
All Other Pins
Junction Temperature
Lead Temperature
Storage Temperature
-0.3V to 20V
-1V to VIN +1V
VSW-0.3V toVSW+6V
-0.3 to 6V
150°C
260°C
-55°C to 150°C
Recommended Operating Conditions (Note 2)
4.75V to 18V
-20°C to +85°C
Input Voltage (VIN)
Operating Temperature
Electrical Characteristics (Unless otherwise specified refer to Circuit of Figure 1, VEN=5V, VIN=12V, TA=25 C)
Parameters
Condition
Feedback Voltage
Upper Switch On Resistance
Lower Switch On Resistance
Upper Switch Leakage
Current Limit
Oscillator Frequency
Short Circuit Frequency
Maximum Duty Cycle
Minimum Duty Cycle
Enable Threshold
Under Voltage Lockout Threshold High Going
Under Voltage Lockout Threshold Hysteresis
Shutdown Supply current
Operating Supply current
Thermal Shutdown
4.75V ≤ VIN ≤ 15V
Min
VEN=0V; VSW=0V
10
2.4
VFB = 0V
VFB = 1.0V
VFB = 1.5V
0.7
2.0
VEN ≤ 0.4V
VEN=2.6V; VFB =1.4V
Pin Description
BS 1
8 N/C
IN 2
7 EN
SW 3
6 COMP
GND 4
5 FB
Max
1.22
0.22
10
Note 1. Exceeding these ratings may damage the device.
Note 2. The device is not guaranteed to function outside its operating rating.
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Typ
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2.80
420
42
90
0
1.0
2.5
200
25
1.0
160
1.3
3.0
50
1.5
Units
V
Ω
Ω
µA
A
KHz
KHz
%
%
V
V
mV
µA
mA
°C
AMS1067
Table 1: Pin Designator
#
Name
1
BS
2
IN
3
SW
4
5
GND
FB
6
COMP
7
EN
8
N/C
Description
High-Side Gate Drive Boost Input. BS supplies the drive for the high-side n-channel MOSFET switch.
Connect a 10nF or greater capacitor from SW to BS to power the high-side switch.
Power Input. IN supplies the power to the IC, as well as the step-down converter switches. Drive IN
with a 4.75V to 18V power source. Bypass IN to GND with a suitably large capacitor to eliminate noise
on the input to the IC.
Power Switching Output. SW is the switching node that supplies power to the output. Connect the
output LC filter from SW to the output load. Note that a capacitor is required from SW to BS to power
the high-side switch.
Ground.
Feedback Input. FB senses the output voltage to regulate that voltage. Drive FB with a resistive
voltage divider from the output voltage. The feedback threshold is 1.22V.
Compensation Node. COMP is used to compensate the regulation control loop. Connect a series RC
network from COMP to GND to compensate the regulation control loop.
Enable Input. EN is a digital input that turns the regulator on or off. Drive EN high to turn on the
regulator, drive it low to turn it off. For automatic startup, leave EN unconnected.
No Connect
Functional Block Diagram
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AMS1067
AMS1067 Step Down from 4.75V-18V to 2.5V @ 2A
VOUT=1.22((R1+R2)/R2)
Schottky Diode Manufacturers
Schottky Rectifier Selection Guide
VIN (Max)
15V
20V
#
1
2
3
4
5
6
2A Current Load
Part Number
30BQ15
B220
SK23
SR32
Vendor
4
1
6
6
2.5V
3.3V
5V
12V
2.5V
3.3V
5V
12V
C2
22µF Ceramic
22µF Ceramic
22µF Ceramic
22µF Ceramic
560µF/6.3V
(30mΩ ESR)
560µF/6.3V
(30mΩ ESR)
470µF/10V
(30mΩ ESR)
220µF/25V
(30mΩ ESR)
R3
Web Site
www.diodes.com
www.fairchildsemi.com
www.gensemi.com
www.irf.com
www.onsemi.com
www.panjit.com.tw
Inductor Selection Guide
Compensation Values for Typical Output Voltage
/Capacitor Combinations
Vout
Vendor
Diodes, Inc.
Fairchild Semiconductor
General Semiconductor
International Rectifier
On Semiconductor
Pan Jit International
Vendor/Model
C3
C6
7.5KΩ
10KΩ
15KΩ
33KΩ
2.2nF
2.0nF
1.2nF
1.0nF
None
None
None
None
200KΩ
1.0nF
100pF
200KΩ
18nF
82pF
250KΩ
1.0nF
56pF
250KΩ
1.0nF
27pF
Core
Material
Package
Dimensions (mm)
W
L
H
Open
Open
Shielded
Shielded
Shielded
Shielded
Ferrite
Ferrite
Ferrite
Ferrite
Ferrite
Ferrite
7.0
7.3
5.5
5.5
6.7
10.1
7.8
8.0
5.7
5.7
6.7
10.0
5.5
5.2
5.5
5.5
3.0
3.0
Shielded
Shielded
Shielded
Open
Ferrite
Ferrite
Ferrite
Ferrite
5.0
7.6
10.0
9.7
5.0
7.6
10.0
11.5
3.0
5.1
4.3
4.0
Open
Open
Ferrite
Ferrite
9.4
9.4
13.0
13.0
3.0
5.1
Core
Type
Sumida
CR75
CDH74
CDRH5D28
CDRH5D28
CDRH6D28
CDRH104R
Toko
D53LC Type A
D75C
D104C
D10FL
Coilcraft
DO3308
DO3316
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AMS1067
Packaging
ESOP8
NOTE:
1) Control dimension is in inches. Dimension in bracket is millimeters.
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