OSC-1.3SH NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 2L FLG DESCRIPTION: A ØD The ASI OSC-1.3SH is Designed for General Purpose Oscillator Applications up to 2.7 GHz. B .060 x 45° CHAMFER C E G FEATURES: L • VCC = 21 V • Common Collector • Omnigold™ Metalization System 700 mA 17.6 W @ TC ≤ 50 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 8.5 °C/W CHARACTERISTICS inches / mm A .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 .255 / 6.48 .132 / 3.35 .125 / 3.18 .117 / 2.97 .110 / 2.79 .117 / 2.97 H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 ORDER CODE: ASI10638 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM inches / mm G 30 V NP MINIMUM F PDISS I K DIM E VCC J M MAXIMUM RATINGS IC F H BVCBO IC = 1.0 mA BVCER IC = 5.0 mA BVEBO IE = 1.0 mA ICBO VCB = 28 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCC = 21 V POUT = 1.3 W RBE = 10 Ω IC = 500 mA MINIMUM TYPICAL MAXIMUM V 45 V 3.5 V 30 f = 1.0 MHz ICQ = 200 mA f = 2.7 GHz UNITS 45 4.5 30 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 300 --- 12 pF dB % REV. C 1/1