MLN1030F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG A DESCRIPTION: ØD B The ASI MLN1030F is Designed for E G FEATURES: L • • • Omnigold™ Metalization System 500 mA MINIMUM inches / mm inches / mm .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 20 V TJ -65 OC to +200 OC TSTG -65 OC to +200 OC θ JC 20 OC/W CHARACTERISTICS SYMBOL MAXIMUM .255 / 6.48 .132 / 3.35 .125 / 3.18 .110 / 2.79 .117 / 2.97 .117 / 2.97 G --- W I K A E PDISS J DIM F VCE F H P MN MAXIMUM RATINGS IC .060 x 45° CHAMFER C H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 ORDER CODE: ASI10622 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1 mA 50 V BVCEO IC = 5 mA 20 V BVEBO IE = 1 mA 3.5 V ICEO VCE = 18 V hFE VCE = 5.0 V COB VCB = 28 V PG VCE = 20 V IC = 1.0 A 15 f = 1.0 MHz POUT = 1.0 W f = 1.0 GHz 12 1.0 mA 120 --- 5.0 pF dB ICQ = 150 mA A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1