ASI PTB20101

PTB20101
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .860 4L FLG
DESCRIPTION:
The ASI PTB20101 is Designed for
General Purpose Class AB Power
Amplifier Applications up to 860 MHz.
FEATURES:
• 175 W, 470-860 MHz
• Silicon Nitride Passivated
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
20 A
VCBO
65 V
PDISS
330 W @ TC = 25 °C
TJ
-40 °C to +150 °C
TSTG
-40 °C to +150 °C
θJC
0.53 °C/W
CHARACTERISTICS
SYMBOL
1,5 = COLLECTOR
3 = EMITTER
2,4 = BASE
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 100 mA
25
V
BVCES
IC = 100 mA
55
V
BVEBO
IE = 5.0 mA
3.5
V
hFE
VCE = 5.0 V
COB
VCB = 28 V
PG
ηC
POUT
VCC = 28 V
ICQ = 2x200 mA
POUT = 110 W
VCC = 28 V
ICQ = 2x200 mA
POUT = 175 W
Ψ
IC = 1.0 A
20
f = 1.0 MHz
f = 860 MHz
100
---
3.5
5
pF
8.5
55
175
11
58
dB
%
W
f = 860 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
5:1
---
REV. C
1/1