MRF890 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MRF890 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. C E FEATURES: • Pg = 9.0 dB min. @ 900 MHz • P1dB = 2.0 Watts min. at 900 MHz • Omnigold™ Metalization System E B MAXIMUM RATINGS IC 0.5 A VCBO 55 V VCER 30 V VEBO 4.0 V PDISS 7.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 25 C/W ° CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 30 V BVCES IC = 5.0 mA 55 V BVEBO IE = 5.0 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 30 V PG ηC VCC = 24 V IC = 100 mA 10 f = 1.0 MHz POUT = 2.0 V f = 900 MHz 9.0 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 500 µA 100 --- 2.0 pF dB % REV. A 1/1