Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE General Description Features The AP2115 is CMOS process low dropout linear regulator with enable function, the regulator delivers a guaranteed 1A (min.) continuous load current. • • • • The AP2115 features low power consumption. • The AP2115 is available in 1.2V, 1.8V, 2.5V and 3.3V regulator output, and available in excellent output accuracy ±1.5%, it is also available in an excellent load regulation and line regulation performance. • • • The AP2115 is available in standard packages of SOIC-8 and SOT-89-5. • • • • • AP2115 Output Voltage Accuracy: ±1.5% Output Current: 1A (Min.) Fold-back Short Current Protection: 50mA Low Dropout Voltage (3.3V): 450mV (Typ.) @ IOUT=1A Stable with 4.7µF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic Excellent Line Regulation: 0.02%/V (Typ.), 0.1%/V (Max.) @ IOUT=30mA Excellent Load Regulation: 0.2%/A @ IOUT=1mA to 1A Low Quiescent Current: 60µA (1.2V/1.8V/ 2.5V) Low Output Noise: 30µVRMS PSRR: 68dB @ Freq=1kHz (1.2V/1.8V) OTSD Protection Operation Temperature Range: -40°C to 85°C ESD: MM 400V, HBM 4000V Applications • • • SOIC-8 LCD Monitor LCD TV STB SOT-89-5 Figure 1. Package Types of AP2115 Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 1 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Pin Configuration R5 Package （SOT-89-5） R5 R5A VOUT VIN 5 4 1 2 3 NC GND EN M Package （SOIC-8） Figure 2. Pin Configuration of AP2115 (Top View) Pin Descriptions Pin No. Name SOT-89-5 SOIC-8 1 2, 3, 4 NC/EN 2 6, 7 GND 3 5 EN/NC 4 8 VIN 5 1 VOUT Jul. 2011 Function No connection/Chip Enable GND Chip Enable, H – normal work, L – shutdown output/ No Connection Input Voltage Output Voltage Rev 1. 1 BCD Semiconductor Manufacturing Limited 2 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Functional Block Diagram Figure 3. Functional Block Diagram of AP2115 Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 3 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Ordering Information AP2115 G1: Green Circuit Type TR: Tape & Reel Blank: Tube Package M: SOIC-8 R5: SOT-89-5 Package Temperature Range 1.2V: Fixed Output 1.2V 1.8V: Fixed Output 1.8V 2.5V: Fixed Output 2.5V 3.3V: Fixed Output 3.3V Condition 1.2V 1.8V SOIC-8 -40 to 85°C 2.5V 3.3V SOT-89-5 -40 to 85°C SOT-89-5 -40 to 85°C 1.2V (R5) 1.8V (R5) 2.5V (R5) 3.3V (R5) 1.2V (R5A) 1.8V (R5A) 2.5V (R5A) 3.3V (R5A) Part Number Marking ID Packing Type AP2115M-1.2G1 AP2115M-1.2TRG1 AP2115M-1.8G1 AP2115M-1.8TRG1 AP2115M-2.5G1 AP2115M-2.5TRG1 AP2115M-3.3G1 AP2115M-3.3TRG1 AP2115R5-1.2TRG1 AP2115R5-1.8TRG1 AP2115R5-2.5TRG1 AP2115R5-3.3TRG1 AP2115R5A-1.2TRG1 AP2115R5A-1.8TRG1 AP2115R5A-2.5TRG1 AP2115R5A-3.3TRG1 2115M-1.2G1 2115M-1.2G1 2115M-1.8G1 2115M-1.8G1 2115M-2.5G1 2115M-2.5G1 2115M-3.3G1 2115M-3.3G1 G22G G22H G37H G41H G27D G27G G41F G41G Tube Tape & Reel Tube Tape & Reel Tube Tape & Reel Tube Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 4 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Absolute Maximum Ratings (Note 1) Parameter Power Supply Voltage Operating Junction Temperature Range Storage temperature Range Lead Temperature (Soldering,10 Seconds) ESD (Machine Model) Symbol Value Unit VCC 6.5 V TJ 150 ºC TSTG -65 to 150 ºC TLEAD 260 ºC 400 V 4000 V ESD (Human Body Model) Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Ambient Operation Range Jul. 2011 Temperature Symbol Min Max Unit VIN 2.5 6.0 V TA -40 85 °C Rev 1. 1 BCD Semiconductor Manufacturing Limited 5 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Electrical Characteristics AP2115-1.2 Electrical Characteristics (Note 2) VIN=2.5V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Symbol VOUT Input Voltage Test Conditions VIN =2.5V, 1mA ≤ IOUT ≤ 30mA IOUT(MAX) VIN=2.5V, VOUT=1.182V to 1.218V Load Regulation △VOUT/VOUT △IOUT VIN=2.5V, 1mA ≤ IOUT ≤1A Line Regulation △VOUT/VOUT △VIN 2.5V≤VIN≤6V, IOUT=30mA Dropout Voltage VDROP Quiescent Current IQ Supply Rejection Output Voltage Temperature Coefficient Short Current Limit Max Unit VOUT ×98.5% 1.2 VOUT ×101.5% V 6 V PSRR △VOUT/VOUT △T ISHORT IOUT=1.0A VIN=2.5V, IOUT=0mA Ripple 1Vp-p VIN=2.5V, IOUT=100mA 1300 mV 60 75 µA VOUT=0V 50 mA 30 µVRMS Standby Current ISTD VIN=3.5V, VEN in OFF mode Thermal Resistance 1200 ppm/°C Enable logic low, regulator off Shutdown %/V ±30 VIL RDCHG 0.1 IOUT=30mA, TA =-40°C to 85°C VEN Low Voltage Shutdown 0.02 dB Enable logic high, regulator on VOUT Discharge Resistor %/A 68 VIH RPD 1 f=1KHz VEN High Voltage EN Pull Down Resistor 0.2 68 10Hz ≤ f ≤100kHz (No Load) tS A f=100Hz VNOISE Start-up Time 1 -0.1 RMS Output Noise Thermal Temperature Thermal Hysteresis Typ VIN Maximum Output Current Power Ratio Min No Load Set EN pin at Low 1.5 0.4 0.01 µA 20 µs 3.0 MΩ 60 Ω TOTSD 160 THYOTSD 25 θJC 1.0 V °C SOIC-8 74.6 SOT-89-5 47 °C/W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 6 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Electrical Characteristics (Continued) AP2115-1.8 Electrical Characteristics (Note 2) VIN=2.8V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges, unless otherwise specified (Note 3). Parameter Output Voltage VOUT Maximum Output Current Line Regulation Dropout Voltage VDROP Quiescent Current Supply IOUT(MAX) △VOUT/VOUT △IOUT △VOUT/VOUT △VIN Load Regulation Power Ratio Symbol IQ Rejection Output Voltage Temperature Coefficient PSRR △VOUT/VOUT △T Test Conditions VIN =2.8V, 1mA ≤ IOUT ≤ 30mA VIN=2.8V, VOUT=1.773V to 1.827V Min Typ Max Unit 98.5% ×VOUT 1.8 101.5% × VOUT V 1 VIN=2.8V, 1mA ≤ IOUT ≤1A A 0.2 1 %/A 0.02 0.1 %/V IOUT=1.0A 500 750 mV VIN=2.8V, IOUT=0mA 60 75 µA 2.8V≤VIN≤6V, IOUT=30mA Ripple 1Vp-p VIN=2.8V, IOUT=100mA -0.1 f=100Hz 68 f=1KHz 68 dB IOUT=30mA, TA =-40°C to 85°C ±30 ppm/°C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE 10Hz ≤ f ≤100kHz (No load) 30 µVRMS VEN High Voltage VIH Enable logic high, regulator on VEN Low Voltage VIL Enable logic low, regulator off Standby Current ISTD VIN=3.5V, VEN in OFF mode Start-up Time tS EN Pull Down Resistor RPD VOUT Discharge Resistor RDCHG Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance No Load Set EN pin at Low 1.5 V 0.4 0.01 µA 20 µs 3.0 MΩ 60 Ω TOTSD 160 THYOTSD 25 θJC 1.0 °C SOIC-8 74.6 SOT-89-5 °C/W 47 Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 7 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Electrical Characteristics (Continued) AP2115-2.5 Electrical Characteristics (Note 2) VIN=3.5V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40OC≤TJ≤85OC ranges, unless otherwise specified (Note 3). Parameter Output Voltage Symbol VOUT Maximum Output Current IOUT(MAX) Test Conditions VIN =3.5V, 1mA ≤ IOUT ≤ 30mA VIN=3.5V, VOUT=2.463V to 2.537V Load Regulation △VOUT/VOUT △IOUT VOUT=2.5V, VIN=VOUT+1V 1mA ≤ IOUT ≤1A Line Regulation △VOUT/VOUT △VIN 3.5V≤VIN≤6V, IOUT=30mA Dropout Voltage VDROP Quiescent Current IQ Standby Current Power Ratio ISTD Supply Rejection Output Voltage Temperature Coefficient PSRR △VOUT/VOUT △T Min Typ Max Unit 98.5% ×VOUT 2.5 101.5% ×VOUT V 1 A 0.2 1 %/A 0.02 0.1 %/V IOUT =1A 450 750 mV VIN=3.5V, IOUT=0mA 60 80 µA 0.01 1.0 µA -0.1 VIN=3.5V, VEN in OFF mode Ripple 1Vp-p VIN=3.5V, IOUT=100mA f=100Hz 65 f=1KHz 65 dB IOUT=30mA ±30 ppm/°C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE 10Hz ≤ f ≤100kHz 30 µVRMS VEN High Voltage VIH Enable logic high, regulator on VEN Low Voltage VIL Enable logic low, regulator off Start-up Time tS EN Pull Down Resistor RPD VOUT Discharge Resistor RDCHG Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance No Load Set EN pin at Low 1.5 20 µs 3.0 MΩ 60 Ω TOTSD 160 THYOTSD 25 θJC V 0.4 °C SOIC-8 74.6 SOT-89-5 47 °C/W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 8 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Electrical Characteristics (Continued) AP2115-3.3 Electrical Characteristics (Note 2) VIN=4.3V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40OC≤TJ≤85OC ranges, unless otherwise specified (Note 3). Parameter Output Voltage VOUT Maximum Output Current Line Regulation Dropout Voltage VDROP Quiescent Current Supply IOUT(MAX) △VOUT/VOUT △IOUT △VOUT/VOUT △VIN Load Regulation Power Ratio Symbol IQ Rejection Output Voltage Temperature Coefficient PSRR △VOUT/VOUT △T Test Conditions VIN =4.3V, 1mA ≤ IOUT ≤ 30mA VIN =4.3V, VOUT=3.25V to 3.35V Min Typ Max Unit 98.5% ×VOUT 3.3 101.5% ×VOUT V 1 VIN=4.3V, 1mA ≤ IOUT ≤1A A 0.2 1 %/A 0.02 0.1 %/V IOUT=1A 450 750 mV VIN=4.3V, IOUT=0mA 65 90 µA Ripple 1Vp-p VIN=4.3V, IOUT=100mA f=100Hz 65 f=1KHz 65 4.3V≤VIN≤6V, IOUT=30mA -0.1 dB IOUT=30mA ±30 ppm/°C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE 10Hz ≤ f ≤100kHz (No load) 30 µVRMS VEN High Voltage VIH Enable logic high, regulator on VEN Low Voltage VIL Enable logic low, regulator off Standby Current ISTD VIN=3.5V, VEN in OFF mode Start-up Time tS EN Pull Down Resistor RPD VOUT Discharge Resistor RDCHG Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance No Load Set EN pin at Low 1.5 V 0.4 0.01 µA 20 µs 3.0 MΩ 60 Ω TOTSD 160 THYOTSD 25 θJC 1.0 °C SOIC-8 74.6 SOT-89-5 °C/W 47 Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 9 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Typical Performance Characteristics 500.0 500 VIN=2.5V AP2115_1.2V 450 400 TA=25 C 350 AP2115_3.3V VIN=4.3V 400.0 O Ground Current (µA) Ground Current (µA) 450.0 O TA=-40 C O TA=85 C 300 250 200 350.0 300.0 250.0 200.0 O 150.0 TA=-40 C 100 100.0 TA=25 C 50 50.0 TA=85 C 150 0 0.0 0.2 0.4 0.6 0.8 O O 0.0 0.0 1.0 0.2 Output Current (A) Figure 4. Ground Current vs. Output Current 0.6 0.8 1.0 Figure 5. Ground Current vs. Output Current 100 100 AP2115_1.2V VIN=2.5V 90 AP2115_3.3V VIN=4.3V 90 IOUT=0mA Quiescent Current (µA) Quiescent Current (µA) 0.4 Output Current (A) 80 70 60 50 40 IOUT=0mA 80 70 60 50 40 30 -40.0 -20.0 0.0 20.0 40.0 60.0 30 -40.0 80.0 -20.0 0.0 20.0 40.0 60.0 80.0 O Temperature ( C) O Temperature ( C) Figure 6. Quiescent Current vs. Temperature Jul. 2011 Figure 7. Quiescent Current vs. Temperature Rev 1. 1 BCD Semiconductor Manufacturing Limited 10 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Typical Performance Characteristics (Continued) 100 110 AP2115_1.2V IOUT=0mA AP2115_3.3V IOUT=0mA 100 80 Quiescent Current (µA) Quiescent Current (µA) 90 70 60 50 o 40 TA= -40 C o TA= 25 C 30 90 80 70 60 o TA= -40 C 50 o o TA= 25 C TA= 85 C o 40 20 10 TA= 85 C 30 2 3 4 5 6 3.5 4.0 4.5 Input Voltage (V) 5.0 5.5 6.0 Input Voltage (V) Figure 8. Quiescent Current vs. Input Voltage Figure 9. Quiescent Current vs. Input Voltage 3.35 1.216 3.34 VIN=2.5V 3.33 IO=10mA IO=100mA IO=500mA IO=1000mA 1.208 1.204 1.200 Output Voltage (V) Output Voltage (V) 1.212 AP2115_1.2V 1.196 1.192 AP2115_3.3V VIN=4.3V 3.32 3.31 3.30 3.29 IO=10mA IO=100mA IO=500mA IO=1000mA 3.28 1.188 3.27 1.184 3.26 1.180 -40 -20 0 20 40 60 3.25 -40 80 0 20 40 60 80 Temperature ( C) Temperature ( C) Figure 10. Output Voltage vs. Temperature Jul. 2011 -20 o o Figure 11. Output Voltage vs. Temperature Rev 1. 1 BCD Semiconductor Manufacturing Limited 11 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Typical Performance Characteristics (Continued) 1.6 4.0 AP2115_3.3V 1.4 3.5 1.2 3.0 Output Voltage (V) Output Voltage (V) AP2115_1.2V 1.0 o 0.8 TA=-40 C o TA=25 C 0.6 o TA=85 C 0.4 2 3 4 5 TA=-40 C o TA=25 C 1.5 o TA=85 C CIN=4.7µF COUT=4.7µF IOUT=10mA 0.5 0.0 1 o 2.0 1.0 CIN=4.7µF COUT=4.7µF IOUT=10mA 0.2 2.5 0.0 0.5 6 1.0 1.5 2.0 Input Voltage (V) 2.5 3.0 3.5 4.0 5.0 5.5 6.0 Input Voltage (V) Figure 12. Output Voltage vs. Input Voltage Figure 13. Output Voltage vs. Input Voltage 1.210 3.35 AP2115_1.2V 1.205 AP2115_3.3V 3.34 1.200 1.195 VIN=4.3V 3.33 Output Voltage (V) Output Voltage (V) 4.5 1.190 1.185 1.180 VIN=2.5V 1.175 o TA=-40 C 1.170 o TA=25 C 1.165 o TA=-40 C o TA=25 C 3.32 o TA=85 C 3.31 3.30 3.29 o TA=85 C 1.160 3.28 1.155 1.150 0.0 0.2 0.4 0.6 0.8 3.27 0.0 1.0 Output Current (A) 0.4 0.6 0.8 1.0 Output Current (A) Figure 14. Output Voltage vs. Output Current Jul. 2011 0.2 Figure 15. Output Voltage vs. Output Current Rev 1. 1 BCD Semiconductor Manufacturing Limited 12 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Typical Performance Characteristics (Continued) 1.3 AP2115_1.2V 1.1 3.0 Output Voltage (V) 1.0 Output Voltage (V) AP2115_3.3V 3.5 1.2 0.9 0.8 0.7 0.6 VIN=2.5V VIN=3.3V 0.5 0.4 2.5 2.0 1.5 VIN=4.3V VIN=5V o TA=25 C CIN=4.7µF COUT=4.7µF 0.3 0.2 1.0 O TA=25 C CIN=4.7µF COUT=4.7µF 0.5 0.1 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 1.4 0.2 0.4 0.6 Figure 16. Output Voltage vs. Output Current 1.0 1.2 1.4 1.6 Figure 17. Output Voltage vs. Output Current 1.8 1.8 1.4 CIN=4.7µF COUT=4.7µF 1.2 TA=25 C Maximum Output Current (A) AP2115_1.2V 1.6 Maximum Output Current (A) 0.8 Output Current (A) Output Current (A) o 1.0 0.8 0.6 0.4 1.6 AP2115_3.3V 1.4 CIN=4.7µF COUT=4.7µF 1.2 TA=25 C o 1.0 0.8 0.6 0.4 0.2 0.2 0.0 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 4.0 6.0 Figure 18. Maximum Output Current vs. Input Voltage Jul. 2011 4.5 5.0 5.5 6.0 Input Voltage (V) Input Voltage (V) Figure 19. Maximum Output Current vs. Input Voltage Rev 1. 1 BCD Semiconductor Manufacturing Limited 13 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Typical Performance Characteristics (Continued) 0.60 0.55 0.10 AP2115_3.3V 0.40 CIN=4.7µF COUT=4.7µF 0.35 TA=-40 C 0.30 TA=25 C 0.25 TA=85 C Output Short Current (A) Dropout Voltage (V) 0.45 AP2115_1.2V VIN=2.5V 0.09 0.50 o o o 0.20 0.15 0.08 0.07 0.06 0.05 0.10 0.04 0.05 0.00 0.0 0.2 0.4 0.6 0.8 0.03 -40 1.0 -20 Output Current (A) 20 40 Figure 21. Output Short Current vs. Temperature 80 AP2115_1.2V AP2115_3.3V VIN=4.3V 0.09 70 60 PSRR (dB) 0.08 0.07 0.06 50 40 o TA=25 C CIN=1µF COUT=4.7µF IOUT=10mA 30 0.05 20 0.04 10 Ripple=1Vpp 0 -20 0 20 40 60 80 100 1k 10k 100k Frequency (Hz) o Temperature ( C) Figure 22. Output Short Current vs. Temperature Jul. 2011 80 Temperature ( C) 0.10 0.03 -40 60 o Figure 20. Dropout Voltage vs. Output Current Output Short Current (A) 0 Figure 23. PSRR vs. Frequency Rev 1. 1 BCD Semiconductor Manufacturing Limited 14 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Typical Performance Characteristics (Continued) 80 AP2115_3.3V o TA=25 C CIN=1µF COUT=4.7µF 70 60 PSRR (dB) Ripple=1Vp-p 50 1A IOUT 500mA/div CIN=4.7µF COUT=4.7µF 0A VOUTAC 50mV/div 40 30 20 IOUT=10mA IOUT=100mA 10 0 100 1k 10k 100k Frequency (Hz) Figure 24. PSRR vs. Frequency Jul. 2011 Figure 25. Load Transient Rev 1. 1 BCD Semiconductor Manufacturing Limited 15 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Typical Application VOUT VIN CIN 4.7 F ON 1.2V/1.8V/ 2.5V/3.3V COUT 4.7 F AP2115 VEN GND OFF Figure 26. AP2115 Typical Application Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 16 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Mechanical Dimensions Unit: mm(inch) R0.150(0.006) SOIC-8 Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 17 Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115 Mechanical Dimensions (Continued) SOT-89-5 1.550(0.061)REF Unit: mm(inch) 4.400(0.173) 4.600(0.181) 1.400(0.055) 1.030(0.041)REF 1.600(0.063) 45 0.900(0.035) 1.100(0.043) 2.300(0.091) 2.600(0.102) 3.950(0.156) 4.250(0.167) 2.060(0.081)REF 3 0.900(0.035) 1.100(0.043) 0.520(0.020) 0.350(0.014) 0.320(0.013) 0.320(0.013) 0.480(0.019) 10 0.450(0.018) 0.520(0.020) 3.000(0.118) TYP 1.500(0.059) 1.800(0.071) 0.320(0.013)REF 3 2.210(0.087)REF 1.620(0.064)REF R0.150(0.006) 10 Jul. 2011 Rev 1. 1 BCD Semiconductor Manufacturing Limited 18 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any particular purpose, particular purpose, nor nor does does BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of any of any its its products products or or circuits. circuits. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not convey convey any any license license under under its its patent patent rights rights or or other rights other rights nor nor the the rights rights of of others. others. MAIN SITE SITE MAIN - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.District, Shenzhen Office BCDRui Semiconductor Company Limited China Taiwan Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Tel: +86-755-8826 Tel: +886-2-2656 2808 Room E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan Fax: +86-755-88267951 7865 Fax: +886-2-2656 28062808 Tel: +86-755-8826 Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 USA Office BCD Office Semiconductor Corp. USA 30920Semiconductor Huntwood Ave.Corporation Hayward, BCD CA 94544, USA Ave. Hayward, 30920 Huntwood Tel :94544, +1-510-324-2988 CA U.S.A Fax:: +1-510-324-2988 +1-510-324-2788 Tel Fax: +1-510-324-2788