Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE General Description Features The AP2112 is CMOS process low dropout linear regulator with enable function, the regulator delivers a guaranteed 600mA (min.) continuous load current. • • • • • The AP2112 provides 1.2V, 1.8V, 2.5V, 2.6V and 3.3V regulated output, and provides excellent output accuracy 1.5%, also provides an excellent load regulation, line regulation and excellent load transient performance due to very fast loop response. The AP2112 has built-in auto discharge function. • • • • • • • • The regulator features low power consumption, and provides SOT-23-5, SOT-89-5, and SOIC-8 packages. • • AP2112 Output voltage accuracy: ±1.5% Output Current: 600mA (Min.) Foldback Short Current Protection: 50mA Enable Function to Turn ON/OFF VOUT Low Dropout Voltage (3.3V): 250mV (Typ.) @IOUT=600mA Excellent Load Regulation: 0.2%/A (Typ.) Excellent Line Regulation: 0.02%/V (Typ.) Low Quiescent Current: 55µA (Typ.) Low Standby Current: 0.01µA (Typ.) Low Output Noise: 50µVRMS PSRR: 100Hz -65dB, 1k –65dB OTSD Protection Stable with 1.0µF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic Operation Temperature Range: -40°C to 85°C ESD: MM 400V, HBM 4000V Applications • • • SOT-23-5 Laptop computer Potable DVD LCD Monitor SOT-89-5 SOIC-8 Figure 1. Package Type of AP2112 Aug. 2010 Rev 1. 0 BCD Semiconductor Manufacturing Limited 1 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Pin Configuration K Package M Package SOT-23-5 SOIC-8 R5/R5A Package SOT-89-5 R5 R5A VOUT VIN 5 4 1 2 3 EN GND NC Figure 2. Pin Configuration of AP2112 (Top View) Pin Descriptions PIN No. Name Descriptions SOT-23-5 SOT-89-5 SOIC-8 1 4 8 VIN Input Voltage 2 2 6, 7 GND GND 5 EN Chip Enable, H – normal work, L – shutdown output 2, 3, 4 NC No Connection 1 VOUT Output Voltage 3 4 5 Aug. 2010 3 (R5) 1 (R5A) 1 (R5) 3 (R5A) 5 Rev 1. 0 BCD Semiconductor Manufacturing Limited 2 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Functional Block Diagram EN VIN Shutdown Logic Foldback Current Limit Thermal Shutdown VOUT 3M VREF GND Figure 3. Functional Block Diagram of AP2112 Aug. 2010 Rev 1. 0 BCD Semiconductor Manufacturing Limited 3 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Ordering Information AP2112 G1: Green Circuit Type Blank: Tube TR: Tape & Reel Package K: SOT-23-5 M: SOIC-8 R5/R5A: SOT-89-5 Package SOT-23-5 Temperature Range -40 to 85°C Condition Tape & Reel 1.8V AP2112K-1.8TRG1 G3M Tape & Reel 2.5V AP2112K-2.5TRG1 G3N Tape & Reel 2.6V AP2112K-2.6TRG1 G5N Tape & Reel 3.3V AP2112K-3.3TRG1 G3P Tape & Reel AP2112M-1.2G1 2112M-1.2G1 Tube AP2112M-1.2TRG1 2112M-1.2G1 Tape & Reel AP2112M-1.8G1 2112M-1.8G1 Tube AP2112M-1.8TRG1 2112M-1.8G1 Tape & Reel AP2112M-2.5G1 2112M-2.5G1 Tube AP2112M-2.5TRG1 2112M-2.5G1 AP2112M-2.6G1 2112M-2.6G1 AP2112M-2.6TRG1 2112M-2.6G1 AP2112M-3.3G1 2112M-3.3G1 Tube AP2112M-3.3TRG1 2112M-3.3G1 Tape & Reel 1.2V(R5) AP2112R5-1.2TRG1 G37D Tape & Reel 1.8V(R5) AP2112R5-1.8TRG1 G37E Tape & Reel 2.5V(R5) AP2112R5-2.5TRG1 G37F Tape & Reel 2.6V(R5) AP2112R5-2.6TRG1 G13F Tape & Reel 3.3V(R5) AP2112R5-3.3TRG1 G37G Tape & Reel 1.2V(R5A) AP2112R5A-1.2TRG1 G33C Tape & Reel 2.5V 3.3V SOT-89-5 -40 to 85°C -40 to 85°C Packing Type G3L 2.6V SOT-89-5 Marking ID AP2112K-1.2TRG1 1.8V -40 to 85°C Part Number 1.2V 1.2V SOIC-8 1.2V: Fixed Output 1.2V 1.8V: Fixed Output 1.8V 2.5V: Fixed Output 2.5V 2.6V: Fixed Output 2.6V 3.3V: Fixed Output 3.3V Tape & Reel Tube Tape & Reel 1.8V(R5A) AP2112R5A-1.8TRG1 G33E Tape & Reel 2.5V(R5A) AP2112R5A-2.5TRG1 G28G Tape & Reel 2.6V(R5A) AP2112R5A-2.6TRG1 G13E Tape & Reel 3.3V(R5A) AP2112R5A-3.3TRG1 G28H Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Aug. 2010 Rev 1. 0 BCD Semiconductor Manufacturing Limited 4 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Absolute Maximum Ratings (Note 1) Parameter Power Supply Voltage Operating Junction Temperature Range Storage temperature Range Lead Temperature (Soldering,10 Seconds) Thermal Resistance （Junction to Ambient）(No heatsink) ESD Symbol Value Unit VCC 6.5 V TJ 150 ºC TSTG -65 to 150 ºC TLEAD 260 ºC θJA SOT-23-5 184 SOIC-8 114 SOT-89-5 120 °C /W Machine Model 400 V Human Model 4000 V Body Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Ambient Operation Range Aug. 2010 Temperature Symbol Min Max Unit VIN 2.5 6.0 V TA -40 85 °C Rev 1. 0 BCD Semiconductor Manufacturing Limited 5 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Electrical Characteristics AP2112-1.2 Electrical Characteristic (Note 2) VIN=2.5V, CIN=1.0µF (Ceramic), COUT=1.0µF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Load Regulation Line Regulation Dropout Voltage Quiescent Current Symbol VOUT IOUT(MAX) (△VOUT/VOUT)/ △IOUT (△VOUT/VOUT)/ △VIN VDROP IQ Standby Current ISTD Power Supply Rejection Ratio PSRR Output Voltage Temperature Coefficient Test Conditions VIN =2.5V, 1mA ≤ IOUT ≤ 30mA VIN =2.5V, VOUT=1.182V to 1.218V Min Typ Max Unit VOUT *98.5% 1.2 VOUT *101.5% V 600 mA VIN=2.5V, 1mA ≤ IOUT ≤600mA 0.2 2.5V≤VIN≤6V, IOUT=30mA 0.02 IOUT =10mA 1000 1300 IOUT =300mA 1000 1300 IOUT=600mA 1000 1300 55 80 µA 0.01 1.0 µA VIN=2.5V, IOUT=0mA VIN=2.5V, VEN in OFF mode Ripple 0.5Vp-p VIN=2.5V, IOUT=100mA f=100Hz 65 f=1KHz 65 (△VOUT/VOUT)/ IOUT=30mA △T TA =-40°C to 85°C ±0.1 %/A %/V mV dB ±100 ppm Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time TS No Load EN Pull Down Resistor RPD V VOUT discharge Resistor Thermal Shutdown Temperature Thermal Shutdown Hysteresis Thermal Resistance RDCHG Set EN pin at Low 20 µs 3.0 MΩ 60 Ω TOTSD 160 THYOTSD 25 θJC °C SOT-23-5 96 SOIC-8 75 SOT-89-5 47 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Aug. 2010 Rev 1. 0 BCD Semiconductor Manufacturing Limited 6 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Electrical Characteristics (Continued) AP2112-1.8 Electrical Characteristic (Note 2) VIN=2.8V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Symbol Test Conditions Min Typ Max Unit VOUT VIN =2.8V, 1mA ≤ IOUT ≤ 30mA VOUT *98.5% 1.8 VOUT *101.5% V IOUT(MAX) (△VOUT/VOUT)/ △IOUT (△VOUT/VOUT)/ △VIN Load Regulation Line Regulation Dropout Voltage VDROP Quiescent Current Standby Current IQ ISTD Power Supply Rejection Ratio Output Voltage Temperature Coefficient PSRR (△VOUT/VOUT)/ △T VIN=2.8V, VOUT=1.773V to 1.827V VOUT=1.8V, VIN=VOUT+1V, 1mA ≤ IOUT ≤600mA 600 mA 0.2 %/A 2.8V≤VIN≤6V, IOUT=30mA 0.02 ±0.1 IOUT =10mA 500 700 IOUT =300mA 500 700 IOUT=600mA 500 700 VIN=2.8V, IOUT=0mA 55 80 µA 0.01 1.0 µA VIN=2.8V, VEN in OFF mode Ripple 0.5Vp-p VIN=2.8V, IOUT=100mA f=100Hz 65 f=1KHz 65 %/V mV dB IOUT=30mA TA =-40°C to 85°C ±100 ppm Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time TS No Load EN Pull Down Resistor RPD VOUT Discharge Resistor RDCHG Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance Set EN pin at Low 20 µs 3.0 MΩ 60 Ω TOTSD 160 THYOTSD 25 θJC V °C SOT-23-5 96 SOIC-8 75 SOT-89-5 47 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Aug. 2010 Rev 1. 0 BCD Semiconductor Manufacturing Limited 7 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Electrical Characteristics (Continued) AP2112-2.5 Electrical Characteristic (Note 2) VIN=3.5V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Symbol Test Conditions Min Typ Max Unit VOUT VIN =3.5V, 1mA ≤ IOUT ≤ 30mA VOUT *98.5% 2.5 VOUT *101.5% V IOUT(MAX) (△VOUT/VOUT)/ △IOUT (△VOUT/VOUT)/ △VIN Load Regulation Line Regulation Dropout Voltage VDROP Quiescent Current Standby Current IQ ISTD Power Supply Rejection Ratio Output Voltage Temperature Coefficient PSRR (△VOUT/VOUT)/ △T VIN=3.5V, VOUT=2.463V to 2.537V VOUT=2.5V, VIN=VOUT+1V, 1mA ≤ IOUT ≤600mA 600 mA 0.2 3.5V≤VIN≤6V, IOUT=30mA %/A 0.02 ±0.1 IOUT =10mA 5 8 IOUT =300mA 125 200 IOUT=600mA 250 400 VIN=3.5V, IOUT=0mA 55 80 µA 0.01 1.0 µA VIN=3.5V, VEN in OFF mode Ripple 0.5Vp-p VIN=3.5V, IOUT=100mA f=100Hz 65 f=1KHz 65 %/V mV dB IOUT=30mA TA =-40°C to 85°C ±100 ppm Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time TS No Load EN Pull Down Resistor RPD VOUT Discharge Resistor RDCHG Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance Set EN pin at Low 20 µs 3.0 MΩ 60 Ω TOTSD 160 THYOTSD 25 θJC V °C SOT-23-5 96 SOIC-8 75 SOT-89-5 47 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA =25°C. Over temperature specifications guaranteed by design only. Aug. 2010 Rev 1. 0 BCD Semiconductor Manufacturing Limited 8 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Electrical Characteristics (Continued) AP2112-2.6 Electrical Characteristic (Note 2) VIN=3.6V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Load Regulation Line Regulation Dropout Voltage Symbol Test Conditions Min Typ Max Unit VOUT VIN =3.6V, 1mA ≤ IOUT ≤ 30mA VOUT *98.5% 2.6 VOUT *101.5% V VIN=3.6V, VOUT=2.561V to 2.639V VIN=VOUT+1V, (△VOUT/VOUT)/ △ VOUT=2.6V, 1mA ≤ IOUT ≤600mA IOUT (△VOUT/VOUT)/ △ 3.6V≤VIN≤6V, IOUT=30mA VIN IOUT(MAX) VDROP Quiescent Current Standby Current IQ ISTD Power Supply Rejection Ratio Output Voltage Temperature Coefficient PSRR 600 mA 0.2 %/A 0.02 ±0.1 IOUT =10mA 5 8 IOUT =300mA 125 200 IOUT=600mA 250 400 VIN=3.6V, IOUT=0mA 55 80 µA 0.01 1.0 µA VIN=3.6V, VEN in OFF mode Ripple 0.5Vp-p VIN=3.6V, IOUT=100mA f=100Hz 65 f=1KHz 65 ( △ VOUT/VOUT)/ △ IOUT=30mA TA =-40°C to 85°C T %/V mV dB ±100 ppm Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time TS No Load EN Pull Down Resistor RPD VOUT Discharge Resistor RDCHG Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance Set EN pin at Low 20 µs 3.0 MΩ 60 Ω TOTSD 160 THYOTSD 25 θJC V °C SOT-23-5 96 SOIC-8 75 SOT-89-5 47 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA =25°C. Over temperature specifications guaranteed by design only. Aug. 2010 Rev 1. 0 BCD Semiconductor Manufacturing Limited 9 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Electrical Characteristics (Continued) AP2112-3.3 Electrical Characteristic (Note 2) VIN=4.3V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Symbol Test Conditions Min Typ Max Unit VOUT VIN =4.3V, 1mA ≤ IOUT ≤ 30mA VOUT *98.5% 3.3 VOUT *101.5% V IOUT(MAX) (△VOUT/VOUT)/ △IOUT (△VOUT/VOUT)/ △VIN Load Regulation Line Regulation Dropout Voltage VDROP Quiescent Current Standby Current IQ ISTD Power Supply Rejection Ratio Output Voltage Temperature Coefficient PSRR (△VOUT/VOUT)/ △T VIN=4.3V, 3.350V VOUT=3.251V to 600 mA VIN=4.3V, 1mA ≤ IOUT ≤600mA 0.2 4.3V≤VIN≤6V, IOUT=30mA 0.02 ±0.1 IOUT =10mA 5 8 IOUT =300mA 125 200 IOUT=600mA 250 400 VIN=4.3V, IOUT=0mA 55 80 µA 0.01 1.0 µA VIN=4.3V, VEN in OFF mode Ripple 0.5Vp-p VIN=4.3V, IOUT=100mA f=100Hz 65 f=1KHz 65 %/A %/V mV dB IOUT=30mA TA =-40°C to 85°C ±100 ppm Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time TS No Load EN Pull Down Resistor RPD VOUT Discharge Resistor RDCHG Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance Set EN pin at Low 20 µs 3.0 MΩ 60 Ω TOTSD 160 THYOTSD 25 θJC V °C SOT-23-5 96 SOIC-8 75 SOT-89-5 47 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA =25°C. Over temperature specifications guaranteed by design only. Aug. 2010 Rev 1. 0 BCD Semiconductor Manufacturing Limited 10 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 1.6 4.0 1.4 3.5 1.2 3.0 Output Voltage(V) Output Voltage (V) Typical Performance Characteristics 1.0 0.8 NO Load O TA=-40 C 0.6 2.5 2.0 No Load 1.5 o TA=-40 C O TA=25 C 0.4 o TA=25 C 1.0 O o TA=85 C 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 TA=85 C 0.5 VOUT=1.2V 6.0 VOUT=3.3V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Input Voltage (V) Figure 4. Output Voltage vs. Input Voltage 5.0 5.5 6.0 Figure 5. Output Voltage vs. Input Voltage 70 70 No Load 68 66 VIN=2.5V 64 No Load 60 Quiescent Current_IQ (µA) Quiescent Current (µA) 4.5 Input Voltage(V) 62 60 58 56 54 52 50 40 O TA=-40 C 30 TA=25 C 20 TA=85 C O O 10 50 0 48 46 -40.0 -20.0 0.0 20.0 40.0 60.0 1.0 80.0 O Temperature ( C) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Input Voltage_VIN (V) Figure 6. Quiescent Current vs. Temperature Aug. 2010 1.5 Figure 7. Quiescent Current vs. Input Voltage Rev 1. 0 BCD Semiconductor Manufacturing Limited 11 6.0 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Typical Performance Characteristics (Continued) 3.35 1.208 VIN=2.5V 3.34 CIN=1µF 3.33 COUT=1µF Output Voltage(V) Output Voltage _ VOUT (V) 1.210 1.206 1.204 1.202 VIN=4.3V CIN=1µF COUT=1µF 3.32 3.31 3.30 3.29 IOUT=10mA IOUT=10mA 3.28 IOUT=100mA IOUT=100mA 3.27 IOUT=300mA IOUT=600mA IOUT=300mA 3.26 IOUT=600mA 1.200 -40.0 -20.0 0.0 20.0 40.0 60.0 3.25 -40 80.0 -20 0 20 40 60 80 o Temperature( C) O Temperature ( C) Figure 8. Output Voltage vs. Temperature Figure 9. Output Voltage vs. Temperature 1.3 4.0 1.2 1.1 O 3.5 0.9 TA=25 C 3.0 0.8 TA=85 C TA= -40 C O O Output Voltage (V) Output Voltage (V) 1.0 0.7 0.6 0.5 0.4 0.3 VIN=4.3V 2.5 o TA=-40 C o 2.0 TA= 25 C 1.5 TA= 85 C o 1.0 0.5 0.2 VIN=2.5V 0.1 0.0 0.0 -0.5 0.0 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Output Current (A) Output Current (A) Figure 10. Output Voltage vs. Output Current Aug. 2010 0.1 1.0 Figure 11. Output Voltage vs. Output Current Rev 1. 0 BCD Semiconductor Manufacturing Limited 12 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Typical Performance Characteristics (Continued) 4.0 1.2 3.5 VIN=2V VIN=2.5V 3.0 VIN=5V 0.8 Output Voltage (V) Output Voltage (V) 1.0 VIN=5.5V VIN=6V 0.6 0.4 O VIN=4.0V VIN=4.3V 2.5 VIN=5.0V 2.0 VIN=5.5V VIN=6.0V 1.5 1.0 o TA=25 C 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 TA=25 C CIN=1µF 0.5 COUT=1µF 0.0 0.8 0.9 CIN=1µF COUT=1µF 0.0 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Output Current (A) Output Current (A) Figure 12. Output Voltage vs. Output Current Figure 13. Output Voltage vs. Output Current 260 350 240 o 300 TA=-40 C 220 250 Ground Current (µA) Dropout Voltage (mV) o TA= 25 C o TA= 85 C VOUT=3.3V 200 150 100 200 180 o TA=-40 C o TA= 25 C o TA= 85 C VIN=4.3V 160 140 120 100 80 50 60 0 0.0 0.1 0.2 0.3 0.4 0.5 40 0.0 0.6 0.2 0.3 0.4 0.5 0.6 Output Current (A) Output Current (A) Figure 14. Dropout Voltage vs. Output Current Aug. 2010 0.1 Figure 15. Ground Current vs. Output Current Rev 1. 0 BCD Semiconductor Manufacturing Limited 13 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Typical Performance Characteristics (Continued) 70 VIN=2.5V, CIN=1µF, COUT=1µF 65 PSRR (dB) 60 CH1: VOUT 10mV/div 55 IOUT=10mA 50 600mA IOUT=100mA 45 IOUT=300mA 40 VOUT=1.2V 35 VIN=2.5V 0mA CH2: IOUT 200mA/div Ripple=0.5V 30 100 20 1k 10k 100k Frequency (Hz) Figure 16. PSRR vs. Frequency Figure 17. Load Transient VIN (2V/div) VIN (2V/div) VEN (2V/div) VEN (2V/div) VOUT (2V/div) VOUT (2V/div) 20µs/div 200µs/div Figure 18. Enable On Aug. 2010 Figure 19. Enable Off Rev 1. 0 BCD Semiconductor Manufacturing Limited 14 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Typical Application (Note 4) VOUT VIN CIN 1 F 1.2V/1.8V/ 2.5V/2.6V/ 3.3V COUT 1 F AP2112 VEN ON OFF GND Note 4: It is recommended to use X7R or X5R dielectric capacitor if 1.0µF ceramic capacitor is selected as input/output capacitors. Figure 20. AP2112 Typical Application Aug. 2010 Rev 1. 0 BCD Semiconductor Manufacturing Limited 15 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 2.820(0.111) 3.020(0.119) 0.100(0.004) 0.200(0.008) 0.200(0.008) 0.700(0.028) REF 0.950(0.037) TYP 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 0.000(0.000) 0.150(0.006) 0.900(0.035) 1.300(0.051) Aug. 2010 Rev 1. 0 BCD Semiconductor Manufacturing Limited 16 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Mechanical Dimensions (Continued) Aug. 2010 Unit: mm(inch) 1.100(0.043) 0.900(0.035) 3.940(0.155) 4.250(0.167) SOT-89-5 Rev 1. 0 BCD Semiconductor Manufacturing Limited 17 Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Mechanical Dimensions (Continued) SOIC-8 4.700(0.185) 5.100(0.201) 7° Unit: mm(inch) 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.800(0.031) 0.300(0.012) R0.150(0.006) 0.100(0.004) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.190(0.007) 0.250(0.010) 1° 5° 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.450(0.017) 0.800(0.031) Note: Eject hole, oriented hole and mold mark is optional. Aug. 2010 Rev 1. 0 BCD Semiconductor Manufacturing Limited 18 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any particular purpose, particular purpose, nor nor does does BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of any of any its its products products or or circuits. circuits. 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MAIN SITE SITE MAIN - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.District, Shenzhen Office BCDRui Semiconductor Company Limited China Taiwan Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Tel: +86-755-8826 Tel: +886-2-2656 2808 Room E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan Fax: +86-755-88267951 7865 Fax: +886-2-2656 28062808 Tel: +86-755-8826 Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 USA Office BCD Office Semiconductor Corp. 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