BRIGHT LED ELECTRONICS CORP. BM-11EG88NI SINCE 1981 ● Features : 1. 1.496 inch (38.00mm) matrix height. 2. Dot size 3.7mm. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Multiplex drive , column cathode com. and row anode com. 7. Duple color available. 8. Categorized for luminous intensity. 9. Stackable vertically and horizontally. ● 1. 2. ● Package Dimensions : 37.9(1.492) PIN1. 37.9(1.492) 28.2(1.110) 3.7(.146) 10.30(.406) 0.50(.020) 2.54x11=27.94(1.1) 3.0(.118) MIN. Description : The BM-11EG88NI is a 38mm (1.5") Notes: 1. All dimensions are in millimeters(inches). matrix height 8×8 dot matrix display. 2. Tolerance is ±0.25mm(.01")unless otherwise This product use hi-eff red chips and green specified. chips, the hi-eff red chips are made from 3. Specifications are subject to change without notice. GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate. 3. This product have a gray face and white dots. ● Internal Circuit Diagram : Ver.1.0 Page 1 of 3 BRIGHT LED ELECTRONICS CORP. BM-11EG88NI SINCE 1981 Absolute Maximum Ratings(Ta=25℃) ● Parameter Symbol Hi-Eff Red Green Unit Power Dissipation Per Dot Pd 80 80 mW Forward Current Per Dot IF 30 30 mA IFP (Duty 1/10, 1KHZ) 150 150 mA Peak Forward Current Per Dot Reverse Voltage Per Dot VR 5 V Operating Temperature Topr -40℃~80℃ - Storage Temperature Tstg -40℃~85℃ - Soldering Temperature (1/16" From Body) Tsol 260℃ For 5 Seconds - Electrical And Optical Characteristics(Ta=25℃) Hi-Eff Red ● Parameter Symbol Condition Min. Typ. Max. Unit Forward Voltage Per Dot VF IF=10mA - 1.9 2.5 V Luminous Intensity Per Dot Iv IF=10mA - 10.0 - mcd Reverse Current Per Dot IR VR=5V - - 100 µA Peak Wave Length λp IF=10mA - 640 - nm Dominant Wave Length λd IF=10mA 626 - 636 nm Spectral Line Half-width ∆λ IF=10mA - 40 - nm Min. Typ. Max. Unit Green Parameter Symbol Condition Forward Voltage Per Dot VF IF=10mA - 2.1 2.5 V Luminous Intensity Per Dot Iv IF=10mA - 10.0 - mcd Reverse Current Per Dot IR VR=5V - - 100 µA Peak Wave Length λp IF=10mA - 568 - nm Dominant Wave Length λd IF=10mA 569 - 574 nm Spectral Line Half-width ∆λ IF=10mA - 30 - nm Ver.1.0 Page 2 of 3 BRIGHT LED ELECTRONICS CORP. BM-11EG88NI SINCE 1981 Typical Electro-Optical Characteristics Curves (25℃ Ambient Temperature Unless Otherwise Noted) Fig.1 Relative Radiant Intensity VS. Wavelength (G) (E) 0.5 0 530 Forward Current (mA) 50 560 590 620 Wavelength(nm) Fig.2 Forward Current VS. Forward Voltage Relative Luminous Intensity (@20mA) Relative Radiant Intensity 1.0 (E) (G) 40 30 20 10 0 1 2 3 4 5 Fig.4 Relative Luminous Intensity VS. Forward Current (G) 2.0 (E) 1.0 0.0 0 10 20 30 40 Forward Current(mA) 3.0 50 680 710 Fig.3 Relative Luminous Intensity VS. Ambient Temperature 2.5 2.0 1.5 1.0 0.5 0 -40 50 Forward Current(mA) 3.0 650 -20 0 20 40 60 Ambient Temperature Ta( C) Forward Voltage (V) Relative Luminous Intensity (@20mA) ● Fig.5 Forward Current Derating Curve VS. Ambient Temperature 40 30 20 10 0 20 40 60 80 100 120 Ambient Temperature Ta( C) Ver.1.0 Page 3 of 3