BRIGHT BM-41EG57MD

BRIGHT LED ELECTRONICS CORP.
BM-41EG57MD
SINCE 1981
Features :
1.
4.118 inch (104.6mm) matrix height.
2.
Square size 12.0 × 12.0mm.
3.
Low power requirement.
4.
Excellent characters appearance.
5.
Solid state reliability.
6.
Multiplex drive , column anode com.
and row cathode com.
7.
Multi color available.
8.
Categorized for luminous intensity.
9.
Stackable vertically and horizontally.
●
1.
2.
3.
4.
●
Description :
The BM-41EG57MD is a
104.6mm (4.118")matrix height
5×7 square matrix display.
This product use hi-eff red chips and
green chips, the hi-eff red chips are
made from GaAsP on GaP substrate,
the green chips are made from GaP
on GaP subtrate.
This product have a black face and
white squares.
This product doesn't contain restriction
substance, comply ROHS standard.
Package Dimensions :
●
74.80(2.945)
104.60(4.118)
●
76.20(3.000)
PIN 1.
12.0x12.0
(.472x.472)
12.80(.504)
3.00(.118) MIN.
0.80(.031)
5.08x8=40.64(1.600)
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
Internal Circuit Diagram :
佰鴻工業股份有限公司
http://www.brtled.com
Ver.1.0 Page 1 of 3
BRIGHT LED ELECTRONICS CORP.
BM-41EG57MD
SINCE 1981
●
Absolute Maximum Ratings(Ta=25℃)
Symbol
Hi-Eff Red
Rating
Green
Rating
Unit
Power Dissipation Per Dot
Pd
160
160
mW
Forward Current Per Dot
IF
30
30
mA
IFP
(Duty 1/10, 1KHZ)
150
150
mA
Parameter
Peak Forward Current Per Dot
Reverse Voltage Per Dot
●
VR
5
V
Operating Temperature
Topr
-40℃~80℃
-
Storage Temperature
Tstg
-40℃~85℃
-
Soldering Temperature
(1/16" From Body)
Tsol
260℃ For 5 Seconds
-
Electrical And Optical Characteristics(Ta=25℃)
Hi-Eff Red
Parameter
Symbol Condition
Min.
Typ.
Max.
Unit
Forward Voltage Per Dot
VF
IF=10mA
-
3.8
5.0
V
Luminous Intensity Per Dot
Iv
IF=10mA
-
15.0
-
mcd
Reverse Current Per Dot
IR
VR=5V
-
-
100
µA
Peak Wave Length
λp
IF=10mA
-
640
-
nm
Dominant Wave Length
λd
IF=10mA
626
-
636
nm
Spectral Line Half-width
∆λ
IF=10mA
-
40
-
nm
Min.
Typ.
Max.
Unit
Green
Parameter
Symbol Condition
佰鴻工業股份有限公司
http://www.brtled.com
Forward Voltage Per Dot
VF
IF=10mA
-
4.2
5.0
V
Luminous Intensity Per Dot
Iv
IF=10mA
-
15.0
-
mcd
Reverse Current Per Dot
IR
VR=5V
-
-
100
µA
Peak Wave Length
λp
IF=10mA
-
568
-
nm
Dominant Wave Length
λd
IF=10mA
569
-
574
nm
Spectral Line Half-width
∆λ
IF=10mA
-
30
-
nm
Ver.1.0 Page 2 of 3
BRIGHT LED ELECTRONICS CORP.
BM-41EG57MD
SINCE 1981
Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity VS. Wavelength
(G)
(E)
0.5
0
530
Forward Current (mA)
50
560
590
620
Wavelength(nm)
Fig.2 Forward Current VS.
Forward Voltage
Relative Luminous Intensity
(@20mA)
Relative Radiant Intensity
1.0
(E)
(G)
40
30
20
10
0
1
2
3
4
5
3.0
650
3.0
680
710
Fig.3 Relative Luminous
Intensity VS.
Ambient Temperature
2.5
2.0
1.5
1.0
0.5
0
-40
-20
0
20
40
60
Ambient Temperature Ta( C)
Forward Voltage (V)
Fig.4 Relative Luminous
Intensity VS.
Forward Current
50
Fig.5 Forward Current
Derating Curve VS.
Ambient Temperature
佰鴻工業股份有限公司
http://www.brtled.com
(G)
2.0
(E)
1.0
0.0
0
10
20
30
40
Forward Current(mA)
50
Forward Current(mA)
Relative Luminous Intensity
(@20mA)
●
40
30
20
10
0
20
40
60
80
100 120
Ambient Temperature Ta( C)
Ver.1.0 Page 3 of 3