® CLE234W 0.165 (4.19) 0.145 (3.68) March, 2006 0.100 (2.54)0.100 dia. (2.54) pin circle dia. 1.00 (25.4) min. 0.215 (5.46) 0.205 (5.21) ANODE CATHODE (connected to case) 0.190 (4.83) 0.176 (4.47) CATHODE ANODE 0.025 (0.64) max. 0.019 (0.48) 0.016 (0.41) 0.010 (0.25) max 0.147 (3.73) 0.137 (3.48) Cathode leads must be externally connected together ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) features • wide emission angle • 880nm wavelength • TO-46 header with flat window can • High power output • RoHS compliant absolute maximum ratings (TA = 25°C unless otherwise stated) description storage temperature ...................................................................... -65°C to +150°C operating temperature ................................................................... -65°C to +125°C lead soldering temperature(1) ......................................................................... 260°C (2)(4) ..................................................................... 500mA continuous forward current peak forward current (1.0ms pulse width, 10% duty cycle) ................................. 4A reverse voltage .................................................................................................... 5V continuous power dissipation(3) .................................................................... 500mW The CLE234W is an advanced, high notes: efficiency, high speed AlGaAs 1. 0.06” (1.5mm) from the header for 5 seconds maximum. infrared-emitting diode with four times 2. Derate linearly 4.0mA/°C from 25°C free air temperature to TA = +125°C. the emitting surface of the typical 3. Derate linearly 4.0mW/°C from 25°C free air temperature to TA = +125°C. AlGaAs emitter. High power output is 4. Operation at this level requires a proper heat sink. achieved with four equally spaced cathode contacts for higher current distribution. Cathode contacts are bonded in pairs, each pair bonded to a separate lead, which need to be connected during operation. Chip size is 0.030” by 0.030”. The TO-46 header provides reliable operation over a wide temperature range. electrical characteristics (TA = 25°C unless otherwise noted) symbol PO VF IR λp BW θHP tr, tf parameter min typ max units Total power output Forward voltage Reverse current Peak emission wavelength Spectral bandwidth at half power i t Emission angle at half power points 8.0 - 10 1.65 880 45 70 700 1.8 10 - mW V µA nm nm deg. ns Radiation rise and fall time test conditions IF = 100mA IF = 100mA VR = 5V IF = 100mA IF = 100mA IF = 100mA IF(PK) = 100mA, f = 1kHz, D.C. = 50% Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Technologies, Inc. Very High Output Aluminum Gallium Arsenide Quad chip IRED Array 0.156 (3.96) 0.136 (3.45) Clairex Plano, Texas 75074-8524 www.clairex.com