CLE336 ® 850nm Super-Efficient AlGaAs Emitter Narrow Radiation Pattern Technologies, Inc. April, 2006 0.156 (3.96) 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) Clairex 0.100 (2.54) dia. 1.00 (25.4) min. 0.215 (5.46) 0.205 (5.21) CATHODE (connected to case) 0.190 (4.83) 0.176 (4.47) ANODE 0.025 (0.64) max. 0.050 (1.27) nom 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48) Case 7 ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) features • 150°C operating temperature • ± 4.5° beam angle • exceptionally high power output • 845nm wavelength • TO-46 hermetic package • cathode connected to case • RoHS compliant absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature....................................................................... -65°C to +150°C operating temperature.................................................................... -65°C to +150°C (1) lead soldering temperature .......................................................................... 260°C (2) continuous forward current .........................................................................100mA peak forward current (1.0ms pulse width, 10% duty cycle) ..................................1A reverse voltage.....................................................................................................5V continuous power dissipation(3) ....................................................................200mW description The CLE336 is an advanced, highefficiency, high speed AlGaAs infrared emitting diode. Output power exceeds standard AlGaAs emitters by 50%. A special lens provides a sharply focused beam pattern. The CLE336 is designed for use anywhere a narrow beam pattern and very high output are required. notes: 1. 0.06” (1.5mm) from the header for 5 seconds maximum. 2. Derate linearly 0.64mA/°C free air temperature to TA = +150°C. 3. Derate linearly 1.28mW/°C free air temperature to TA = +150°C. electrical characteristics (TA = 25°C unless otherwise noted) symbol PO parameter Total power output (4) Ee Irradiance VF IR λP min typ max units 10 20 - mW mW/cm test conditions IF = 100mA 2 - 3.5 - Forward voltage - 1.7 1.9 V IF = 100mA Reverse current - - 10 µA VR = 5V IF = 100mA Peak emission wavelength - 845 - nm IF = 100mA BW Spectral bandwidth at half power points - 40 - nm IF = 100mA θHP Emission angle at half power points - 9.0 - deg. IF = 100mA tr Radiation rise time - 11 - ns Tf Radiation fall time - 7.0 - ns IF = 100mA, f = 1KHz, Duty Cycle = 50% Note: 4. Ee is a measure of irradiance (power/unit area) within a 0.444" (1.128cm) diameter area, centered on the mechanical axis of the device and spaced 2.54" (6.45cm) from the lens side of the tab. This is geometrically equivalent to a 10° cone. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Revised 11/08/06 Plano, Texas 75074-8524 www.clairex.com