COMCHIP SF1010-G

Comchip
SMD Super Fast Recovery Rectifiers
SMD Diode Specialist
SF1005-G Thru. SF1060-G
Reverse Voltage: 50 to 600 Volts
Forward Current: 10 Amp
RoHS Device
Features
ITO-220AB
-Low power loss,high efficiency.
-Low power voltage,high current capability.
-High surge capacity.
-Super fast recouery time, high voltage.
-In compliance with EU RoHS 2002/95/EC directives.
-Exeeds environmental standards of MIL-S-19500/228
0.138(3.50)
0.122(3.10)
0.118(3.00)
0.102(2.60)
0.406(10.30)
0.386( 9.80)
0.189(4.80)
0.173(4.40)
0.118(3.00)
0.106(2.70)
0.610(15.50)
0.571(14.50)
Mechanical data
0.04 MAX
(1.0)
0.157(4.00)
0.142(3.60)
-Epoxy: UL 94-V0 rated flame retardant.
-Case: ITO-220AC molded plastic.
0.059(1.50)
0.043(1.10)
-Terminals: Lead solderable per MIL-STD-750, method
2026.
-Polarity: As marked
0.571(14.50)
0.531(13.50)
0.030(0.76)
0.020(0.51)
0.030(0.76)
0.020(0.51)
0.112(2.84)
0.088(2.24)
-Weight: 1.56 grams approx.
-Standard packaging: Any
0.114(2.90)
0.098(2.50)
Dimensions in inches and (millimeter)
Maximun Ratings and Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol
SF
1005-G
SF
1010-G
SF
1020-G
SF
1030-G
SF
1040-G
SF
1050-G
SF
1060-G
Unit
Maximum Reverse Peak Repetitive Voltage
VRRM
50
100
150
200
300
400
600
V
Maximum RMS Bridge Input Voltage
VRMS
35
70
105
140
210
280
420
V
Maximum DC Blocking Voltage
VDC
50
100
150
200
300
400
600
V
Maximum Average Forward
Rectified Current @Tc=75°C
I(AV)
10
A
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load (JEDEC METHOD)
IFSM
150
A
Maximum Peak Forward Voltage at 10.0A ,
per element
VF
Parameter
Maximum DC Reverse Current
At Rate DC Blodking voltage
@TJ=25°C
@TJ=100°C
Trr
Typical Junction capacitance (Note 1)
CJ
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
1.70
1
500
IR
Max. Reverse recovery time ( Note 2)
1.30
0.95
μA
35
25
V
nS
62
PF
RθJC
3
°C/W
TJ
-55 to +150
°C
TSTG
-55 to +150
°C
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0VDC.
2. Reverse recovery test conditions: IF=0.5A, IR=1A, IRR=0.25A
3. Both bonding and chip structure available.
REV:A
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Comchip Technology CO., LTD.
Comchip
SMD Super Fast Recovery Rectifiers
SMD Diode Specialist
Rating and Characteristic Curves (EF1005-G Thru. EF1060-G)
Fig.2- Maximum Non-Repetitive Forward
Surge Current
Fig.1- Typical Forward Current Derating
Curve
150
Peak Forward Surge Current, (A)
12
Average Forward Current, (A)
10
8
6
4
2
125
100
75
50
25
8.3ms Single half-sine-wave
(JEDEC Method)
0
0
0
50
100
1
150
10
Case Temperature, (°C )
Fig.4- Typical Instantaeous Forward
Characteristics
Fig.3- Typical Reverse Characteristics
100
Instantaneous Forward Current, (A)
1000
Instantaneous Reverse Current, (µA)
100
Number of Cycles at 60Hz
TJ =125°C
100
TJ =75°C
10
1.0
TJ =25°C
50-200V
300-400V
10
600V
1.0
TJ = 25°C
Pulse width 300us
0.1
0.1
0
20
40
60
80
100
120
140
0.6
Percent of Rated Peak Reverse Voltage, (%)
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage, (V)
Fig.5- Typical Junction Capacitance
Junction Capacitance, (pF)
200
TJ = 25°C
10
1
0.1
1.0
10.0
100
Reverse Voltage , (V)
REV:A
Page 2
QW-BS006
Comchip Technology CO., LTD.
Comchip
SMD Super Fast Recovery Rectifiers
SMD Diode Specialist
Marking Code
Part Number
Marking code
SF1005-G
EF1005
SF1010-G
EF1010
SF1020-G
EF1020
SF1030-G
EF1030
SF1040-G
EF1040
SF1050-G
SF1060-G
EF1050
EF1060
EFXXXX
XXXX = Product type marking code
Standard Packaging
Case Type
TUBE
( EA )
ITO-220AB
50
TUBE PACK
CARTON
BOX
( EA )
( EA )
2,000
8,000
REV:A
Page 3
QW-BS006
Comchip Technology CO., LTD.