Comchip SMD Super Fast Recovery Rectifiers SMD Diode Specialist SF1005-G Thru. SF1060-G Reverse Voltage: 50 to 600 Volts Forward Current: 10 Amp RoHS Device Features ITO-220AB -Low power loss,high efficiency. -Low power voltage,high current capability. -High surge capacity. -Super fast recouery time, high voltage. -In compliance with EU RoHS 2002/95/EC directives. -Exeeds environmental standards of MIL-S-19500/228 0.138(3.50) 0.122(3.10) 0.118(3.00) 0.102(2.60) 0.406(10.30) 0.386( 9.80) 0.189(4.80) 0.173(4.40) 0.118(3.00) 0.106(2.70) 0.610(15.50) 0.571(14.50) Mechanical data 0.04 MAX (1.0) 0.157(4.00) 0.142(3.60) -Epoxy: UL 94-V0 rated flame retardant. -Case: ITO-220AC molded plastic. 0.059(1.50) 0.043(1.10) -Terminals: Lead solderable per MIL-STD-750, method 2026. -Polarity: As marked 0.571(14.50) 0.531(13.50) 0.030(0.76) 0.020(0.51) 0.030(0.76) 0.020(0.51) 0.112(2.84) 0.088(2.24) -Weight: 1.56 grams approx. -Standard packaging: Any 0.114(2.90) 0.098(2.50) Dimensions in inches and (millimeter) Maximun Ratings and Electrical Characteristics (at TA=25°C unless otherwise noted) Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol SF 1005-G SF 1010-G SF 1020-G SF 1030-G SF 1040-G SF 1050-G SF 1060-G Unit Maximum Reverse Peak Repetitive Voltage VRRM 50 100 150 200 300 400 600 V Maximum RMS Bridge Input Voltage VRMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current @Tc=75°C I(AV) 10 A Peak Forward Surage Current , 8.3ms Single Half Sine-Wave Super Imposed On Rated Load (JEDEC METHOD) IFSM 150 A Maximum Peak Forward Voltage at 10.0A , per element VF Parameter Maximum DC Reverse Current At Rate DC Blodking voltage @TJ=25°C @TJ=100°C Trr Typical Junction capacitance (Note 1) CJ Typical Thermal Resistance Operating Temperature Range Storage Temperature Range 1.70 1 500 IR Max. Reverse recovery time ( Note 2) 1.30 0.95 μA 35 25 V nS 62 PF RθJC 3 °C/W TJ -55 to +150 °C TSTG -55 to +150 °C Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0VDC. 2. Reverse recovery test conditions: IF=0.5A, IR=1A, IRR=0.25A 3. Both bonding and chip structure available. REV:A Page 1 QW-BS006 Comchip Technology CO., LTD. Comchip SMD Super Fast Recovery Rectifiers SMD Diode Specialist Rating and Characteristic Curves (EF1005-G Thru. EF1060-G) Fig.2- Maximum Non-Repetitive Forward Surge Current Fig.1- Typical Forward Current Derating Curve 150 Peak Forward Surge Current, (A) 12 Average Forward Current, (A) 10 8 6 4 2 125 100 75 50 25 8.3ms Single half-sine-wave (JEDEC Method) 0 0 0 50 100 1 150 10 Case Temperature, (°C ) Fig.4- Typical Instantaeous Forward Characteristics Fig.3- Typical Reverse Characteristics 100 Instantaneous Forward Current, (A) 1000 Instantaneous Reverse Current, (µA) 100 Number of Cycles at 60Hz TJ =125°C 100 TJ =75°C 10 1.0 TJ =25°C 50-200V 300-400V 10 600V 1.0 TJ = 25°C Pulse width 300us 0.1 0.1 0 20 40 60 80 100 120 140 0.6 Percent of Rated Peak Reverse Voltage, (%) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage, (V) Fig.5- Typical Junction Capacitance Junction Capacitance, (pF) 200 TJ = 25°C 10 1 0.1 1.0 10.0 100 Reverse Voltage , (V) REV:A Page 2 QW-BS006 Comchip Technology CO., LTD. Comchip SMD Super Fast Recovery Rectifiers SMD Diode Specialist Marking Code Part Number Marking code SF1005-G EF1005 SF1010-G EF1010 SF1020-G EF1020 SF1030-G EF1030 SF1040-G EF1040 SF1050-G SF1060-G EF1050 EF1060 EFXXXX XXXX = Product type marking code Standard Packaging Case Type TUBE ( EA ) ITO-220AB 50 TUBE PACK CARTON BOX ( EA ) ( EA ) 2,000 8,000 REV:A Page 3 QW-BS006 Comchip Technology CO., LTD.