Comchip Schottky Barrier Rectifier SMD Diode Specialist SR520-G Thru. SR5200-G Forward current: 5.0A Reverse voltage: 20 to 200V RoHS Device DO-27 Features -Axial lead type devices for through hole design. -Low power loss, high efficiency. -High current capability, Low forward voltage drop. -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. -Lead-free part meets environmental standards of MIL-STD-19500/228 0.052(1.30) 0.048(1.20) DIA. 1.0(25.4) min. 0.375(9.50) 0.285(7.20) 0.220(5.60) 0.197(5.00) DIA. Mechanical Data 1.0(25.4) min. -Case: Molded plastic, DO-201AD/DO-27 -Epoxy: UL94V-0 rate flame retardant. -Lead: Axial lead, solderable per MIL-STD-202, Method 208 guranteed. -Polarity: color band denoted cathode end. -Weight: 1.10 gram (approx.). Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Ratings at Ta=25°C unless otherwise noted. Single phase, half wave, 60Hz, resistive or inductive loaded. For capacitive load, derate current by 20% . Symbol SR520 Parameter -G SR540 -G SR560 -G SR5100 SR5150 SR5200 Unit -G -G -G Maximum recurrent peak reverse voltage VRRM 20 40 60 100 150 200 V Maximum RMS voltage VRMS 14 28 42 70 105 140 V Maximum DC blocking voltage VDC 20 40 60 100 150 200 V Maximum instantaneous forward voltage at IF=5A,TA=25°C VF 0.50 0.55 0.75 0.81 0.87 0.90 V Operating junction temperature range TJ -50 ~ +150 Symbol -50 ~ +175 °C MAX. Unit IO 5.0 A IFSM 125 A VR =VRRM TA=25°C IR 0.5 mA VR =VRRM TA=100°C IR 20 mA Junction to ambient RθJA 24 °C/W CJ 380 pF Parameter Conditions Forward rectified current see Fig.1 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) MIN. TYP. Reverse Current Thermal Resistance Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage Storage temperature TSTG -50 +175 °C REV:A QW-BB027 Page 1 Comchip Schottky Barrier Rectifier SMD Diode Specialist RATING AND CHARACTERISTIC CURVES (SR520-G Thru. SR5200-G) Fig.1 - Typical Forward Current Derating Curve Fig.2 - Typical Forward Characteristics 6.0 5.0 5 SR 15 20 0 -G 4.0 00 0 -G 51 20 SR R5 ~S ~ -G 3.0 -G 2.0 1.0 0 0 25 50 75 100 125 150 5 SR 10 -G 40 -G 5 SR 5 SR 60 15 -G -G 100 SR5 R5 ~S 0-G 20 0-G 1.0 0.1 TJ=25°C Pulse Width 300us 1% Duty Cycle 0.01 0.1 175 20 R5 ~S 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Ambient Temperature, (°C) Forward Voltage, (V) Fig.3 - Maximum Non-repetitive Forward Surge Current Fig.4 - Typical Junction Capacitance 150 1400 O TJ=25 C 8.3ms single half sine wave, JEDEC method Junction Capacitance, (pF) Peak Forward Surge Current, (A) Instantaneous Forward Current, (A) 100 5 SR Average Forward Current, (A) 7.0 120 90 60 30 1200 1000 800 600 400 200 0 1 10 100 Number of Cycles at 60Hz 0 0.01 0.1 1 10 100 Reverse Voltage, (V) Fig.5 - Typical Reverse Characteristics Reverse Leakage Current , (mA) 100 10 TJ=125°C 1 0.1 TJ=25°C 0.01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage, (%) REV:A QW-BB027 Page 2 Comchip Schottky Barrier Rectifier SMD Diode Specialist Taping Specification For Axial Lead Diodes E 90° ± 5° Z A L L1 B H L2 T E W DO-27 DO-27 SYMBOL A B Z T E L1 L2 (mm) 9.30 ± 0.50 52.40 (max) 1.20 (max) 6.00 ± 0.40 0.80 (max) 1.00 (max) 1.00 (max) (inch) 0.366 ± 0.020 2.063 (max) 0.047 (max) 0.236 ± 0.016 0.031 (max) 0.039 (max) 0.039 (max) SYMBOL D1 D0 D W0 L W H (mm) 85.70 ± 0.30 16.60 ± 0.40 330.00 72.00 ± 3.00 260.00 75.00 145.00 (inch) 3.374 ± 0.012 0.654 ± 0.016 13.000 2.835 ± 0.118 10.236 2.953 5.709 Marking Code Part Number Marking Code SR520-G SR52 SR540-G SR54 SR560-G SR56 SR5100-G SR510 SR5150-G SR515 SR5200-G SR520 SRXXX XX / XXX = Product type marking code Standard Packaging AMMO PACK Case Type DO-27 BOX CARTON ( pcs ) ( pcs ) 500 9,000 REV:A QW-BB027 Page 3