Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 1/8 CYStech Electronics Corp. N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585N6 Description The MTC3585N6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOT-26 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-26 package is universally preferred for all commercial-industrial surface mount applications. Features • Simple drive requirement • Low gate charge • Low on-resistance • Fast switching speed • Pb-free package Equivalent Circuit Outline MTC3585N6 SOT-26 D1 G：Gate S：Source D：Drain MTC3585N6 S1 D2 G1 S2 G2 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1) Continuous Drain Current @TA=70 °C (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) BVDSS VGS ID ID IDM Pd Tj, Tstg Rth,ja Limits N-channel P-channel 20 -20 ±12 ±12 3.5 -2.5 2.8 -1.97 10 -10 1.14 0.01 -55~+150 110 Unit V V A A A W W / °C °C °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS IDSS *RDS(ON) Min. Typ. Max. Unit 20 0.5 - 0.02 7 1.2 ±100 1 10 75 125 - V V/°C V nA μA μA 230 55 40 6 8 10 3 4 0.7 2 1.1 370 7 1.7 16 8 1.2 - *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Rg Source-Drain Diode *VSD *trr *Qrr - Test Conditions S VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS=VGS, ID=250μA VGS=±12V, VDS=0 VDS=20V, VGS=0 VDS=16V, VGS=0, Tj=70°C ID=3.5A, VGS=4.5V ID=1.2A, VGS=2.5V VDS=5V, ID=3A pF VDS=20V, VGS=0, f=1MHz ns VDS=15V, ID=1A, VGS=5V, RG=3.3Ω, RD=15Ω nC VDS=16V, ID=3A, VGS=4.5V Ω f=1MHz V ns nC VGS=0V, IS=1.2A mΩ IS=3A, VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC3585N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 3/8 P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS IDSS *RDS(ON) Min. Typ. Max. Unit -20 - -0.01 4 -1.2 ±100 -1 -25 120 160 300 - V V/°C V nA μA μA 270 70 55 6 17 16 5 5 1 2 430 8 - 20 15 -1.2 - *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *trr *Qrr - Test Conditions S VGS=0, ID=-250μA Reference to 25°C, ID=-1mA VDS=VGS, ID=-250μA VGS=±12V, VDS=0 VDS=-20V, VGS=0 VDS=-16V, VGS=0, Tj=70°C ID=-2.8A, VGS=-10V ID=-2.5A, VGS=-4.5V ID=-2A, VGS=-2.5V VDS=-5V, ID=-2A pF VDS=-20V, VGS=0, f=1MHz ns VDS=-10V, ID=-1A, VGS=-10V, RG=3.3Ω, RD=10Ω mΩ nC VDS=-16V, ID=-2A, VGS=-4.5V V ns nC VGS=0V, IS=-1.2A IS=-2A, VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC3585N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 4/8 N-channel Characteristic Curves MTC3585N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 5/8 N-channel Characteristic Curves(Cont.) MTC3585N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 6/8 P-channel Characteristic Curves MTC3585N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 7/8 P-channel Characteristic Curves(Cont.) MTC3585N6 CYStek Product Specification Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 8/8 CYStech Electronics Corp. SOT-26 Dimension A D Marking: d1 d2 6 5 4 Style: Pin 1. Gate1 (G1) Pin 2. Source2 (S2) Pin 3. Gate2 (G2) Pin 4. Drain2 (D2) Pin 5. Source1 (S1) Pin 6. Drain1 (D1) B C 1 2 3 Device Name Date Code E 6-Lead SOT-26 Plastic Surface Mounted Package CYStek Package Code: N6 I F L H J G Inches Min. Max. 0.1063 0.1220 0.1024 0.1181 0.0551 0.0709 0.0748 REF 0.0374 REF 0.0374 REF 0.0118 0.0217 DIM A B C D d1 d2 E 3585 □□□□ Millimeters Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.90 REF 0.95 REF 0.95 REF 0.30 0.55 K DIM F G H I J K L Inches Min. Max. 0.0472 REF 0 0.0039 0.0079 0.0047 REF 0.0146 REF 0.0236 REF 0° 10° Millimeters Min. Max. 1.20 REF 0 0.10 0.20 0.12 REF 0.37 REF 0.60 REF 0° 10° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC3585N6 CYStek Product Specification