CYStech Electronics Corp. Spec. No. : C710H8 Issued Date : 2009.05.07 Revised Date : Page No. : 1/6 N-Channel Logic Level Enhancement Mode Power MOSFET MTB06N03H8 BVDSS ID RDSON(max) 30V 75A 6.5mΩ Description The MTB06N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol Outline MTB06N03H8 Power pak Pin 1 G：Gate D：Drain S：Source MTB06N03H8 CYStek Product Specification Spec. No. : C710H8 Issued Date : 2009.05.07 Revised Date : Page No. : 2/6 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TC=25℃ Total Power Dissipation TC=100℃ VDS VGS Operating Junction and Storage Temperature Range Tj, Tstg ID IDM IAS EAS EAR PD Limits 30 ±20 75 45 160 *1 53 140 40 *2 60 32 -55~+175 Unit V A mJ W °C 100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=25V N-CH Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.5 50 *3 Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad Unit °C/W °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS *1 IDSS ID(ON) *1 RDS(ON) *1 Dynamic Ciss Coss Crss MTB06N03H8 Min. Typ. Max. Unit 30 1.0 75 - 1.5 25 5.5 8.8 3.0 ±100 1 25 6.5 11 V V S nA - 3292 501 355 - Test Conditions A mΩ mΩ VGS=0, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=24A VGS=±20 VDS =24V, VGS =0 VDS =20V, VGS =0, Tj=125°C VDS =10V, VGS =10V VGS =10V, ID=30A VGS =4.5V, ID=24A pF VGS=0V, VDS=15V, f=1MHz μA CYStek Product Specification CYStech Electronics Corp. Spec. No. : C710H8 Issued Date : 2009.05.07 Revised Date : Page No. : 3/6 Characteristics (TC=25°C, unless otherwise specified) Symbol Qg (VGS=10V) *1, 2 Qg (VGS=4.5V) *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg Min. - Typ. 48 27 6 16 20 15 65 10 1.2 Max. - Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 32 12 75 150 1.3 - Unit Test Conditions nC VDS=15V, VGS=10V, ID=30A ns VDS=15V, ID=24A, VGS=10V, RGS=2.7Ω Ω VGS=15mV, VDS=0V, f=1MHz A V ns nC IF=IS, VGS=0V IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Footprint unit : mm MTB06N03H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C710H8 Issued Date : 2009.05.07 Revised Date : Page No. : 4/6 Characteristic Curves MTB06N03H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C710H8 Issued Date : 2009.05.07 Revised Date : Page No. : 5/6 Characteristic Curves(Cont.) MTB06N03H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C710H8 Issued Date : 2009.05.07 Revised Date : Page No. : 6/6 Power pak Dimension Marking: Device Name Date Code 8-Lead power pak Plastic Package CYStek Package Code: H8 *: Typical Inches Min. Max. 0.1890 0.1969 0.2244 0.2283 0.2323 0.2402 0.0130 0.0201 0.0500* 0.0354 0.0472 0.0067 0.0118 0.1445 0.1583 DIM A B C D E F G H Millimeters Min. Max. 4.80 5.00 5.70 5.80 5.90 6.10 0.33 0.51 1.27* 0.90 1.20 0.17 0.30 3.67 4.02 DIM I J K L M Inches Min. Max. 0.0161 0.0240 0.1331 0.1488 0.0433 0.0201 0.0280 - Millimeters Min. Max. 0.41 0.61 3.38 3.78 1.10 0.51 0.71 0° 12° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB06N03H8 CYStek Product Specification