EMA109 0.5 – 3.0 GHz High Linearity Power MMIC UPDATED 11/11/2004 FEATURES • • • • • • 0.5 – 3.0 GHz BANDWIDTH 24.0dBm TYPICAL OUTPUT POWER -45dBc OIMD3 @ 14dBm EACH TONE Pout 11.0 dB TYPICAL POWER GAIN SINGLE BIAS SUPPLY 100% DC TESTED Dimension: 760um X 700um ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETER/TEST CONDITIONS1 SYMBOL Caution! ESD sensitive device. MIN TYP MAX UNITS 3.0 GHz F Operating Frequency Range P1dB Power at 1dB Compression VDD = 8.0V, F = 2.4G 23.0 24.0 dBm Gss Small Signal Gain VDD = 8.0V, F = 2.4G rd Output 3 Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 14dBm VDD = 8.0V, F = 2.4G 10.0 11.0 dB IMD3 RLIN RLOUT 0.5 -45 -42 dBc Input Return Loss VDD = 8.0V -12 -8 dB Output Return Loss VDD = 8.0V -12 -8 dB 120 150 mA IDD Drain Current 90 RTH Thermal Resistance1 o 70 C/W Note: 1. Overall Rth depends on die attach. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL CHARACTERISTIC VALUE VDD Power Supply Voltage 8V VGG Gate Voltage -3 V IDD Drain Current IDSS IGSF Forward Gate Current 10 mA PIN Input Power PT Total Power Dissipation 1.4 W TCH Channel Temperature 150°C TSTG Storage Temperature -65/+150°C @ 3dB compression Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH –THS)/RTH; where THS = temperature of heatsink, and PT = (VDD * IDD) – (POUT – PIN). Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2004 EMA109 0.5 – 3.0 GHz High Linearity Power MMIC UPDATED 11/11/2004 Typical Performance: 1. P-1 VS VD EMA109C P-1(dBm) VS VD 25 P-1 (dBm) 24 VD=5.5V 23 VD=6.5V 22 VD=8V 21 20 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) 2. G-1 VS VD EMA109C G-1(dB) VS VD 14 G-1 (dB) 13 VD=5.5V 12 VD=6.5V 11 VD=8V 10 9 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2004 EMA109 0.5 – 3.0 GHz High Linearity Power MMIC UPDATED 11/11/2004 Typical Performance: 3. OIP3 VS VD OIP3 (dBm) EMA109C OIP3 VS VD 43 41 39 37 35 33 31 29 27 25 VD=8V VD=6.5V VD=5.5V 0 5 10 15 20 Each Tone Pout (dBm) 4. Small Signal Performance EMA109C Small Signal Performance 20 15 10 5 0 -5 -10 -15 DB(|S[1,1]|) * -20 DB(|S[2,1]|) * -25 DB(|S[2,2]|) * -30 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3 Frequency (GHz) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 3 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2004