EMP212 9.50 – 12.0 GHz Power Amplifier MMIC UPDATED 04/04/2008 FEATURES • • • • 9.5 – 12.0 GHz Operating Frequency 30.5dBm Output Power at 1dB Compression 18 dB Typical Power Gain 43dBc OIMD3 @ EACH TONE Pout 19dBm APPLICATIONS • • Point-to-point and point-to-multipoint radio Military Radar Systems Dimension: 2500um X 1600um Thickness: 85um ± 15um ELECTRICAL CHARACTERISTICS (Ta = 25 °C, Vdd*=7V, Idsq=800mA) SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS 12.0 GHz Operating Frequency Range 9.5 P1dB Output Power at 1dB Gain Compression 29.5 30.5 dBm Gss Small Signal Gain Vdd=5V 15 18 dB F rd OIMD3 Input RL Output RL Output 3 Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 19dBm Ids= 60%±10%Idss -43 -40 dBc Input Return Loss -10 -7 dB Output Return Loss -8 -5 dB 1250 1500 mA 8 V Idss Saturated Drain Current Vds=3V, Vgs=0V Vdd Drain Voltage Rth Thermal Resistance (Au-Sn Eutectic Attach) Tb Operating Base Plate Temperature 950 7 o 8.5 C/W -35 +85 ºC *Unless otherwise specified MAXIMUM RATINGS AT 25°C1,2 SYMBOL CHARACTERISTIC ABSOLUTE CONTINUOUS VDS Drain to Source Voltage 12V 8V VGS Gate to Source Voltage -8V -4 V IDD Drain Current Idss 1300mA IGSF Forward Gate Current 114mA 19mA PIN Input Power 27dBm @ 3dB compression TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/175°C -65/150°C 12.4W 10.4W PT Total Power Dissipation 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation VDS*IDS<(TCH –THS)/RTH; where THS =Operating Base Plate temperature Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised April 2008 EMP212 9.50 – 12.0 GHz Power Amplifier MMIC UPDATED 04/04/2008 ASSEMBLY DRAWING The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line and separate the wires to minimize the mutual inductance. CHIP OUTLINE Chip Size 2500 x 1600 microns Chip Thickness: 85 ± 15 microns PAD Dimensions: 100 x 100 microns All Dimensions in Microns Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised April 2008