FUJI TP802C04R

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TP802C04R
FUJI Diode
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Symbols
Conditions
Ratings
Units
Repetitive peak reverse voltage
VRSM
48
V
Repetitive peak reverse voltage
VRRM
-
40
V
IO
50Hz Square wave duty =1/2
Tc = 116˚C
10*
A
Sine wave, 10ms 1shot
120
A
Average output current
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
IFSM
tw=500ns, duty=1/40
Tj
-
150
˚C
Tstg
-
-40 to+150
˚C
Conditions
Maximum
Units
Note* Out put current of center tap full wave connection.
Note**Rating per element
Electrical characteristics
Item
(at Ta=25˚C unless otherwise specified.)
Symbols
Forward voltage***
VF
IF = 4 A
0.55
V
Reverse current***
IR
VR =VRRM
5
mA
Thermal resistance
Rth(j-c)
Junction to case
3
˚C/W
Conditions
Maximum
Units
-
1.6
g
Note*** Rating per element
Mechanical characteristics
Item
Approximate mass
1
TP802C04R
FUJI Diode
http://www.fujisemi.com
Outline Drawings [mm]
04
04
2
TP802C04R
FUJI Diode
http://www.fujisemi.com
Forward Characteristic (typ.)
Reverse Characteristic (typ.)
102
100
Tj=150°C
Tj=125°C
101
Tj=100°C
10
Reverse Current (mA)
Tj=100°C
Tj=25°C
100
10-1
IR
IF
Forward Current (A)
Tj=150°C
Tj=125°C
1
Tj=25°C
10-2
10-3
0.1
0.0
0.2
0.4
0.6
VF
0.8
1.0
1.2
0
1.4
10
20
VR
Forward Voltage (V)
30
40
50
Reverse Voltage (V)
Reverse Power Dissipation (max.)
Forward Power Dissipation (max.)
6.0
360°
5.5
5.0
DC
360°
6
VR
I0
Forward Power Dissipation
4.0
2.0
3.0
Reverse Power Dissipation
Square wave λ=60°
3.5
α
5
(W)
(W)
4.5
WF
λ
Square wave λ=120°
Sine wave λ=180°
Square wave λ=180°
2.5
DC
4
α=180°
3
2
PR
1.5
1.0
1
0.5
Per 1element
0.0
0
1
2
Io
3
4
Average Output Current
5
0
6
0
(A)
5
10
15
VR
3
20
25
30
Reverse Voltage
35
40
(V)
45
50
TP802C04R
FUJI Diode
http://www.fujisemi.com
Current Derating (Io-Tc) (max.)
Junction Capacitance Characteristic (typ.)
1000
160
150
140
DC
Square wave λ=180°
110
Square wave λ=120°
100
Cj
100
Junction Capacitance (pF)
Sine wave λ=180°
120
Tc
Case Temperature
(°C)
130
Square wave λ=60°
90
360°
80
I0
VR=20V
λ
70
0
2
4
Io
6
8
10
Average Output Current
12
14
16
10
(A)
VR
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Surge Capability (max.)
IFSM Peak Half - Wave Current (A)
1000
100
10
1
10
100
Number of Cycles at 50Hz
4
100
Reverse Voltage (V)
TP802C04R
FUJI Diode
http://www.fujisemi.com
Transient Thermal Impedance (max.)
Transient Thermal Impedance
(°C/W)
102
101
Rth j-c:3.0°C/W
100
10-1
10-3
10-2
10-1
100
T Time
5
(sec)
101
102
TP802C04R
FUJI Diode
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. A
ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
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become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
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he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
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6