FUJI SD882-02

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SD882-02-TE12R
FUJI Diode
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Symbols
Repetitive peak reverse voltage
Conditions
Ratings
Units
-
20
V
2.0
A
VRRM
Average forward current
I FAV
Square wave duty =1/2
Tl = 96 ˚C
Non-repetitive forward surge current
IFSM
Sine wave, 10ms
Operating junction temperature
Storage temperature
Electrical characteristics
Item
Forward voltage
Reverse current
Thermal resistance
70
A
Tj
-
125
˚C
Tstg
-
-55 to+125
˚C
Conditions
(at Ta=25˚C unless otherwise specified.)
Symbols
Maximum
Units
VF
IF = 2.0 A
0.39
V
IR
VR =VRRM
2.0
mA
Junction to lead
18
˚C/W
Conditions
Maximum
Units
-
0.035
g
Rth(j-l)
Mechanical characteristics
Item
Approximate mass
1
SD882-02-TE12R
FUJI Diode
http://www.fujisemi.com
Outline Drawings [mm]
Out view
unit:mm
Marking
Type Name
Cathode Mark
2
SD882-02-TE12R
FUJI Diode
http://www.fujisemi.com
Forward Characteristic (typ.)
Reverse Characteristic (typ.)
10
Tj=125°C
2
10
Tj= 25°C
Tj=100°C
Tj=100°C
IR Reverse Current (mA)
IF Forward Current (A)
1
Tj=125°C
1
10
0
10
0.1
Tj= 25°C
-1
10
0.01
-2
0.0
0.1
0.2
0.3
10
0.4
10
20
VR Reverse Voltage (V)
VF Forward Voltage (V)
Forward Power Dissipation (max.)
Reverse Power Dissipation(max.)
2.0
360°
Square wave λ=60°
DC
VR
Square wave λ=120°
α
1.0
(W)
Reverse Power Dissipation
(W)
Sine wave λ=180°
Square wave λ=180°
DC
0.5
square
α=180°
sine
α=180°
1.0
PR
WF
Forward Power Dissipation
1.5
0.5
360°
I0
λ
0.0
0.0
0.0
0.5
IF(AV)
1.0
Average Forward Current
1.5
0
2.0
(A)
5
10
VR
3
Reverse Voltage
15
(V)
20
SD882-02-TE12R
FUJI Diode
http://www.fujisemi.com
Current Derating (IF(AV)-Tl) (max.)
Junction Capacitance Characteristic (typ.)
3
1000
360°
I0
VR=10V
2
Junction Capacitance (pF)
IF(AV) Average Forward Current
(A)
λ
DC
Cj
1
100
Sine wave λ=180°
Square wave λ=180°
Square wave λ=120°
Square wave λ=60°
0
0
20
40
60
80
100
120
10
140
1
Tl
Lead Temperature
10
VR
(°C)
Surge Capability (max.)
Reverse Voltage (V)
Thermal Resistance Print Land (max.)
100
Rth(j-a)
100
(C°/W)
Thermal Resistance
10
IFSM
Peak Half - Wave Current
(A)
Rth(l-a)
With Glass Epoxy
P.C Board
t=0.8mm
10
1
1
1
1
10
10
100
Print Land Area
Number of Cycles at 50Hz
4
(mm2)
1000
SD882-02-TE12R
FUJI Diode
http://www.fujisemi.com
Transient Thermal Impedance (max.)
3
Transient Thermal Impedance
(°C/W)
10
115°C/W
2
10
θj-a
18°C/W
θj-l
1
10
With Glass Epoxy
P.C Board
t=0.8mm
print land 15×15mm
0
10
-3
10
-2
10
-1
0
10
t
10
Time
5
(sec)
1
10
2
10
SD882-02-TE12R
FUJI Diode
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. A
ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
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may arise from the use of the applications described herein.
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become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. T
he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
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6