HMC232G8 v01.1105 GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6 GHz Typical Applications Features The HMC232G8 is ideal for: Isolation: 48 dB @ 2 GHz 34 dB @ 6 GHz • Telecom Infrastructure Insertion Loss: 1.5 dB Typical @ 4 GHz • Microwave Radio & VSAT Non-Reflective Design • Military Radios, Radar & ECM Hermetic Surface Mount Package • Space Systems • Test Instrumentation General Description Functional Diagram 10 SWITCHES - SMT The HMC232G8 is a broadband high isolation nonreflective GaAs MESFET SPDT switch in a hermetic surface mount package. Covering DC to 6 GHz, the switch features >48 dB isolation up to 2 GHz and >34 dB isolation up to 6 GHz. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply. Electrical Specifi cations, TA = +25° C, With 0/-5V Control, 50 Ohm System Parameter Frequency Insertion Loss DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz Isolation DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz Return Loss Return Loss RF1, RF2 10 - 78 Min. 43 33 29 Typ. Max. Units 1.4 1.5 1.8 1.7 1.8 2.2 dB dB dB 48 38 34 dB dB dB “On State” DC - 6.0 GHz 16 dB “Off State” DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz 11 9 8 dB dB dB 27 dBm Input Power for 1 dB Compression 0.5 - 6.0 GHz 22 Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) 0.5 - 6.0 GHz 46 dBm Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 6.0 GHz 3 6 ns ns For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232G8 v01.1105 GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6 GHz Insertion Loss Isolation 0 0 ISOLATION (dB) -2 -3 + 25C + 85C - 40C -4 RF1 RF2 -20 -30 -40 -50 -60 -70 -5 0 1 2 3 4 5 6 0 7 1 2 Return Loss 4 5 6 7 10 0.1 and 1 dB Input Compression Point 35 0 INPUIT P1dB (dBm) RFC RF1, RF2 ON RF1, RF2 OFF -5 -10 -15 30 25 20 -20 1 dB Compression Point 0.1 dB Compression Point 15 -25 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 FREQUENCY (GHz) FREQUENCY (GHz) Input Third Order Intercept Point 60 55 INPUIT IP3 (dBm) RETURN LOSS (dB) 3 FREQUENCY (GHz) FREQUENCY (GHz) SWITCHES - SMT INSERTION LOSS (dB) -10 -1 50 45 40 + 25C + 85C - 40C 35 30 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 79 HMC232G8 v01.1105 Absolute Maximum Ratings SWITCHES - SMT 10 RF Input Power (Vctl= -5V) (0.5 - 6 GHz) +30 dBm (@ +50 °C) Control Voltage Range (A & B) +1.0V to -7.5 Vdc Channel Temperature 150 °C Thermal Resistance (RTH) (junction to lead) 94 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6 GHz Control Voltages State Bias Condition Low 0 to -0.2V @ 10 uA Max. High -5V @ 10 uA Typ. to -7V @ 45 uA Typ. Truth Table Control Input Signal Path State A B RFC to RF1 RFC to RF2 High Low ON OFF Low High OFF ON Caution: Do not “Hot Switch” power levels greater than +27 dBm (Vctl = 0/-5 Vdc). Outline Drawing NOTES: 1. PACKAGE MATERIAL: ALUMINA LOADED BOROSILICATE GLASS. 2. LEADS, BASE, COVER MATERIAL: KOVAR™ (#7052 CORNING). 3. PLATING: ELECTROLYTIC GOLD 50 MICROINCHES MIN., OVER ELECTROLYTIC NICKEL 50 MICROINCHES MIN. 4. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. TOLERANCES: .±005 [0.13] UNLESS OTHERWISE SPECIFIED. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 10 - 80 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232G8 v01.1105 GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6 GHz Suggested Driver Circuit Pin Descriptions Pin Number Function Description 1, 4, 7 RF1, RF2, RFC This pin is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. 2, 3, 8 GND Package bottom must also be connected to PCB RF ground. 5 A See truth table and control voltage table. 6 B See truth table and control voltage table. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com SWITCHES - SMT 10 10 - 81 HMC232G8 v01.1105 GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6 GHz Evaluation PCB SWITCHES - SMT 10 List of Materials for Evaluation PBC 107261 [1] Item Description J1 - J3 PCB Mount SMA RF Connector J4 - J6 DC Pin R1, R2 100 Ohm Resistor, 0603 Pkg. U1 HMC232G8 SPDT Switch PCB [2] 107112 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 10 - 82 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232G8 v01.1105 GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6 GHz Notes: SWITCHES - SMT 10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 83