HMC256 v03.1007 3 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Typical Applications Features The HMC256 is ideal for: High Image Rejection: >30 dB • Microwave Radio & VSAT Input IP3: +18 dB • Test Instrumentation Wideband IF: DC to 1.5 GHz • Military Radios Radar & ECM Die Size: 1.6 x 1.3 x 0.1 mm MIXERS - I/Q MIXERS / IRM - CHIP • Space Functional Diagram General Description The HMC256 chip is a compact, 2.08 mm2, I/Q Mixer MMIC which can be used as an Image Reject Mixer (IRM) or Single Sideband (SSB) upconverter. The chip utilizes two standard Hittite double-balanced mixer cells and a Lange Coupler realized in GaAs MESFET technology. All data is with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length <0.51 mm (<20 mils). A low frequency quadrature hybrid was used to interface the MMIC IF ports to a 120 MHz IF USB output. This provides an example of the I/Q Mixer in an IRM application. The IF may be used from DC to 1.5 GHz. This I/Q Mixer is a more reliable, much smaller replacement to hybrid drop-in style I/Q Mixer assemblies. Electrical Specifi cations, TA = +25° C, As an IRM IF = 70 - 200 MHz LO = +18 dBm Parameter Min. Max. Min. Typ. Units Max. Frequency Range, RF 5.9 - 12 7.1 - 11.7 GHz Frequency Range, LO 5.7 - 12 6.9 - 11.7 GHz Frequency Range, IF DC - 1.5 Conversion Loss Noise Figure (SSB) 3-2 Typ. IF = 70 - 200 MHz LO = +15 dBm DC - 1.5 8 10.5 8 10.5 GHz 8 10.5 dB 8 10.5 dB Image Rejection (IR) 24 32 20 30 dB LO to RF Isolation 22 30 22 30 dB LO to IF Isolation 27 35 27 35 dB RF to IF Isolation 24 30 24 30 dB IP3 (Input) 18 17 dBm 1 dB Gain Compression (Input) 5 5 dBm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC256 v03.1007 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Conversion Gain to Desired Sideband vs. Temperature @ LO = +15 dBm, IF = 120 MHz USB Conversion Gain to Desired Sideband vs. LO Drive, IF = 120 MHz USB 0 -5 -10 -40C +25C +85C -15 -20 -5 3 -10 LO = +12 dBm LO = +14 dBm LO = +16 dBm LO = +18 dBm -15 -20 5 6 7 8 9 10 11 12 13 5 6 7 FREQUENCY (GHz) 50 50 40 40 30 20 -30C +25C +85C 0 10 11 12 13 11 12 13 11 12 13 30 20 - 12 dBm - 14 dBm - 16 dBm - 18 dBm 10 0 5 6 7 8 9 10 11 12 13 5 6 7 RF FREQUENCY (GHz) 8 9 10 RF FREQUENCY (GHz) Return Loss @ LO = +15 dBm Isolations @ LO = +15 dBm 0 0 -5 RF/IF LO/IF LO/RF -10 -10 ISOLATION (dB) RETURN LOSS (dB) 9 Image Rejection vs. LO Drive, IF = 120 MHz USB IMAGE REJECTION (dB) IMAGE REJECTION (dB) Image Rejection vs. Temperature LO = +15 dBm, IF = 120 MHz USB 10 8 RF FREQUENCY (GHz) MIXERS - I/Q MIXERS / IRM - CHIP CONVERSION GAIN (dB) CONVERSION GAIN (dB) 0 -15 -20 RF LO -25 -20 -30 -40 -30 -50 -35 -40 -60 5 6 7 8 9 10 FREQUENCY (GHz) 11 12 13 5 6 7 8 9 10 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-3 HMC256 v03.1007 GaAs MMIC I/Q MIXER 5.9 - 12 GHz 3-4 Input IP3 vs. LO Drive, IF = 120 MHz USB 0 25 THIRD ORDER INTERCEPT (dBm) MIXERS - I/Q MIXERS / IRM - CHIP 3 IF CONVERSION GAIN & RETURN LOSS (dB) IF Bandwidth @ LO = 15 dBm -5 -10 -15 -20 IF Conversion Gain IF Return Loss -25 -30 20 15 -14 dBm -16 dBm -18 dBm 10 0 0.5 1 1.5 2 2.5 FREQUENCY (GHz) Absolute Maximum Ratings RF / IF Input +13 dBm LO Drive +27 dBm Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 9.36 mW/°C above 85 °C) 0.61 W Thermal Resistance (RTH) (junction to die bottom) 106.8 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C 3 6 6.5 7 7.5 8 FREQUENCY (GHz) %,%#42/34!4)#3%.3)4)6%$%6)#% /"3%26%(!.$,).'02%#!54)/.3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC256 v03.1007 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. BOND PADS ARE .004” SQUARE. MIXERS - I/Q MIXERS / IRM - CHIP 3 3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006”. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Die Packaging Information [1] Standard Alternate WP-3 (Waffle Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-5 HMC256 v03.1007 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Pad Descriptions MIXERS - I/Q MIXERS / IRM - CHIP 3 3-6 Pad Number Function Description 1 RF This pin is AC coupled and matched to 50 Ohm. 2 LO This pin is AC coupled and matched to 50 Ohm. 3, 4 IF1, IF2 This pin is DC coupled. For operation to DC pin must not sink/source more than 2 mA of current or failure may result. Backside GND The backside of the die must connect to RF ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC256 v03.1007 GaAs MMIC I/Q MIXER 5.9 - 12 GHz Image Reject Mixer Suggested Application Circuit Below in Figure 1 is a photo and in Figure 2 a schematic of the HMC256 image reject mixer MMIC die connected to a quadrature hybrid (120 MHz) manufactured by Merrimac Industries West Caldwell, NJ (P/N QHZ-2A-120). Figure 1: Complete MIC IRM Assembly Figure 2: Schematic of HMC256 IRM MMIC Connected to the Quadrature Hybrid Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 3 MIXERS - I/Q MIXERS / IRM - CHIP Data presented for the HMC256 MMIC IRM was obtained using the circuit described here. Please note that the image rejection and isolation performance is dependent on the selection of the low frequency hybrid. The performance specification of the low frequency quadrature hybrid as well as the phase balance and VSWR of the interface circuit to the HMC256 MMIC will effect the overall IRM performance. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-7