HMC557 v01.1007 MIXERS - DOUBLE-BALANCED - CHIP 4 GaAs MMIC FUNDAMENTAL MIXER, 2.5 - 7.0 GHz Typical Applications Features The HMC557 is ideal for: High LO/RF Isolation: 48 dB • WiMAX & Fixed Wireless Wide IF Bandwidth: DC - 3 GHz • Microwave Radio Passive Double Balanced Topology • Military & Space Low Conversion Loss: 7 dB • Communications, Radar & EW Small Size: 1.02 x 0.94 x 0.1 mm • Test Equipment & Sensors Functional Diagram General Description The HMC557 is a passive double balanced mixer that can be used as an upconverter or downconverter between 2.5 and 7 GHz. The miniature monolithic mixer is fabricated in a GaAs MESFET process, and requires no external components or matching circuitry. The HMC557 operates with LO drive levels as low as +9 dBm and provides excellent LO to RF and LO to IF isolation due to optimized balun structures. Measurements were made with the chip mounted into in a 50 ohm test fixture and includes the parasitic effects of wire bond assembly. Connections were made with a 1 mil wire bond with minimal length (<12 mil). Electrical Specifi cations, TA = +25° C, IF= 100 MHz, LO= +15 dBm* Parameter Min. Frequency Range, RF & LO Frequency Range, IF Typ. Max. Min. Typ. Max. 2.5 - 5.0 5.0 - 7.0 GHz DC - 3 DC - 3 GHz Conversion Loss 7 9.5 8 10.5 dB Noise Figure (SSB) 7 9.5 8 10.5 dB LO to RF Isolation 40 48 35 45 dB LO to IF Isolation 25 30 22 28 dB RF to IF Isolation 10 18 18 24 dB IP3 (Input) 17 22 dBm IP2 (Input) 50 50 dBm 1 dB Gain Compression (Input) 10 12 dBm *Unless otherwise noted, all measurements performed as downconverter, IF= 100 MHz. 4 - 66 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC557 v01.1007 GaAs MMIC FUNDAMENTAL MIXER, 2.5 - 7.0 GHz Conversion Gain vs. Temperature @ LO = +15 dBm Isolation @ LO = +15 dBm 0 RF/IF LO/RF LO/IF -10 -5 -10 +25C +85C -55C -15 -20 -30 4 -40 -50 -20 -60 2 3 4 5 6 7 8 9 2 3 4 FREQUENCY (GHz) Conversion Gain vs. LO Drive 6 7 8 9 8 9 8 9 Return Loss @ LO = +15 dBm 0 0 -5 -5 RETURN LOSS (dB) CONVERSION GAIN (dB) 5 FREQUENCY (GHz) -10 +9 dBm +12 dBm +15 dBm +18 dBm -15 -10 -15 RF LO -20 -25 -20 2 3 4 5 6 7 8 9 2 3 4 5 6 7 FREQUENCY (GHz) FREQUENCY (GHz) Upconverter Performance Conversion Gain vs. LO Drive IF Bandwidth @ LO = +15 dBm 0 0 CONVERSION GAIN (dB) RESPONSE (dB) -5 -10 -15 -20 -25 -5 -10 +9 dBm +12 dBm +15 dBm +18 dBm -15 IF Return Loss Conversion Gain -30 -35 MIXERS - DOUBLE-BALANCED - CHIP ISOLATION (dB) CONVERSION GAIN (dB) 0 -20 0 0.5 1 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 4 2 3 4 5 6 7 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 67 HMC557 v01.1007 GaAs MMIC FUNDAMENTAL MIXER, 2.5 - 7.0 GHz Input IP3 vs. Temperature @ LO = +15 dBm * 30 25 25 20 20 15 10 15 +25C +85C -40C 10 +9 dBm +12 dBm +15 dBm +17 dBm 5 5 0 0 2 3 4 5 6 7 8 9 2 3 4 FREQUENCY (GHz) 60 60 50 50 IP2 (dBm) IP2 (dBm) 70 40 30 7 9 8 9 30 +25C +85C -40C 10 0 0 2 3 4 5 6 7 8 9 2 3 4 FREQUENCY (GHz) 5 6 7 FREQUENCY (GHz) Input P1dB vs. Temperature @ LO = +15 dBm MxN Spurious Outputs 16 nLO mRF 14 12 10 +25C +85C -55C 8 0 1 2 3 0 xx -6 24 26 41 1 14 0 37 35 71 2 76 53 71 52 77 3 94 95 86 73 97 4 94 94 97 100 102 RF = 5.1 GHz @ -10 dBm LO = 5 GHz @ +15 dBm All values in dBc below the IF output power level. 6 2 3 4 5 6 7 8 FREQUENCY (GHz) * Two-tone input power = -10 dBm each tone, 1 MHz spacing. 4 - 68 8 40 20 +9 dBm +12 dBm +15 dBm +17 dBm 10 6 Input IP2 vs. Temperature @ LO = +15 dBm * 70 20 5 FREQUENCY (GHz) Input IP2 vs. LO Drive * P1dB (dBm) MIXERS - DOUBLE-BALANCED - CHIP 4 30 IP3 (dBm) IP3 (dBm) Input IP3 vs. LO Drive * For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 HMC557 v01.1007 GaAs MMIC FUNDAMENTAL MIXER, 2.5 - 7.0 GHz Absolute Maximum Ratings RF / IF Input +25 dBm LO Drive +25 dBm Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 7.6 mW/°C above 85 °C) 492 mW Thermal Resistance (channel to die bottom) 132 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MIXERS - DOUBLE-BALANCED - CHIP 4 Outline Drawing Die Packaging Information [1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. Standard Alternate WP-7 (Waffle Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 2. DIE THICKNESS IS .004”. 3. TYPICAL BOND PAD IS .004” SQUARE. 4. BOND PAD SPACING CENTER TO CENTER IS .006”. 5. BACKSIDE METALLIZATION: GOLD. 6. BOND PAD METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 9. THIS DIE IS DESIGNED FOR PICK-UP WITH VACUUM (EDGE) COLLET TOOLS. TO PRECLUDE THE RISK OF PERMANENT DAMAGE, NO CONTACT TO THE DIE SURFACE IS ALLOWED WITHIN THIS RECTANGULAR AREA. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 69 HMC557 v01.1007 GaAs MMIC FUNDAMENTAL MIXER, 2.5 - 7.0 GHz Pad Descriptions MIXERS - DOUBLE-BALANCED - CHIP 4 4 - 70 Pad Number Function Description 1 LO This pin is DC coupled and matched to 50 Ohms. 2 RF This pin is DC coupled and matched to 50 Ohms. 3 IF This pad is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pin must not source or sink more than 2 mA of current or part non-function and possible part failure will result. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic Assembly Drawing For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC557 v01.1007 GaAs MMIC FUNDAMENTAL MIXER, 2.5 - 7.0 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC 3 mil Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting 0.102mm (0.004”) Thick GaAs MMIC 3 mil Ribbon Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 MIXERS - DOUBLE-BALANCED - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 4 - 71