HMC742HFLP5E v00.0211t 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz Designer’s Kit Available Typical Applications Features The HMC742HFLP5E is ideal for: -19 to 12.5 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection • WiBro / WiMAX / 4G High Output IP3: +39 dBm • Microwave Radio & VSAT TTL/CMOS Compatible Serial, Parallel, or latched Parallel Control • Test Equipment and Sensors ±0.25 dB Typical Gain Step Error • IF & RF Applications Single +5V Supply 32 Lead 5x5mm SMT Package: 25mm2 VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 12 12 - 1 Functional Diagram General Description The HMC742HFLP5E is a digitally controlled variable gain amplifier which operates from 0.5 GHz to 4 GHz, and can be programmed to provide from -19 dB attenuation, to 12.5 dB of gain, in 0.5 dB steps. The HMC742HFLP5E delivers noise figure of 4 dB in its maximum gain state, with output IP3 of up to +39 dBm in any state. The dual mode gain control interface accepts either a three-wire serial input or a 6 bit parallel word. The HMC742HFLP5E also features a user selectable power up state and a serial output for cascading other serially controlled Hittite components. The HMC742HFLP5E is housed in an RoHS compliant 5x5 mm QFN leadless package, and requires minimal external components. Electrical Specifications, TA = +25° C, 50 Ohm System Vdd = +5V, Vs= +5V Parameter Min. Frequency Range Typ. Max. Min. Typ. Max. Units 500 - 2700 2700-4000 MHz Gain (Maximum Gain State) 12.5 9 dB Gain Control Range 31.5 31.5 dB Input Return Loss 14 12 dB Output Return Loss 10 12 dB Gain Accuracy: (Referenced to Maximum Gain State) All Gain States ± (0.3 + 4% of relative gain setting) Max Output Power for 1 dB Compression Output Third Order Intercept Point (Two-Tone Output Power= 12 dBm Each Tone) Noise Figure (Max Gain State) Switching Characteristics 21 tRISE, tFall (10 / 90% RF) tON, tOFF (Latch Enable to 10 / 90% RF) Supply Current (Amplifier) Supply Current (Controller) Idd 130 dB 22 dBm 39 38 dBm 4 4.5 dB 30 60 30 60 ns ns 150 0.12 175 0.25 130 150 0.12 175 0.25 mA mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC742HFLP5E v00.0211 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz Relative Gain Setting (Referenced to Maximum Gain State) 16 0 12 -10 8 +25 C +85 C -40 C 4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -20 16dB 31.5dB -30 -40 4.5 8dB 0 0.5 1 1.5 FREQUENCY (GHz) 2 2.5 3 3.5 4 4.5 3 3.5 4 4.5 28 32 FREQUENCY (GHz) Input Return Loss Output Return Loss 0 0 RETURN LOSS (dB) RETURN LOSS (dB) 0dB -10 -20 -30 -10 -20 -30 -40 -40 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4.5 0.5 1 1.5 2.5 Bit Error vs. Attenuation State Bit Error vs. Frequency 4 1.5 3 1 BIT ERROR (dB) BIT ERROR (dB) 2 FREQUENCY (GHz) FREQUENCY (GHz) 2 31.5dB 16dB 1 0 4.0 GHz 0.7 GHz 0.5 0 -0.5 2.0 GHz -2 3.0 GHz -1 -1 -1.5 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) 3.5 4 4.5 0 4 8 12 16 20 24 ATTENUATION STATE (dB) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 12 VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT RELATIVE GAIN (dB) GAIN (dB) Maximum Gain vs. Frequency 12 - 2 HMC742HFLP5E v00.0211 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz Relative Phase vs. Frequency (Referenced to Maximum Gain State) Step Attenuation vs. Attenuation State 40 1.5 31.5dB 16dB STEP ATTENUATION (dB) RELATIVE PHASE (DEG) 30 20 8dB 10 0 -10 0.7 GHz 2.0 GHz 3.0 GHz 4.0 GHz 1 0.5 0 -20 -30 0 0.5 1 12 - 3 2 2.5 3 3.5 4 -0.5 4.5 0 4 8 FREQUENCY (GHz) 28 6 23 P1dB (dBm) NOISE FIGURE (dB) 16 20 24 28 32 3.5 4 4.5 3.5 4 4.5 Output P1dB vs. Temperature 8 4 2 12 ATTENUATION STATE (dB) Noise Figure vs. Frequency [1] 18 +25 C +85 C -40 C 13 +25 C +85 C -40 C 8 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4.5 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) FREQUENCY (GHz) Psat vs. Temperature Output IP3 vs. Temperature 50 28 45 23 40 IP3 (dBm) Psat (dBm) VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 12 1.5 18 30 +25 C +85 C -40 C 13 35 +25 C +85 C -40 C 25 20 8 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) 3.5 4 4.5 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) [1] Max Gain State For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC742HFLP5E v00.0211 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz Serial Control Interface The HMC742HFLP5E contains a 3-wire SPI compatible digital interface (SERIN, CLK, LE). The serial control interrface is activated when P/S is kept high. The 6-bit serial word must be loaded MSB first. The positive-edge sensitive CLK and LE requires clean transitions. If mechanical switches are used, sufficient debouncing should be provided. When LE is high, 6-bit data in the serial input register is transferred to the attenuator. When LE is high CLK is masked to prevent data transition during output loading. When P/S is low, 3-wire SPI interface inputs (SERIN, CLK, LE) are disabled and the input register is loaded with parallel digital inputs (D0-D5). When LE is high, 6-bit parallel data changes the state of the part per truth table. For all modes of operations, the DVGA state will stay constant while LE is kept low. Parameter Typ. Min. serial period, tSCK 100 ns Control set-up time, tCS 20 ns Control hold-time, tCH 20 ns LE setup-time, tLN 10 ns Min. LE pulse width, tLEW 10 ns Min LE pulse spacing, tLES 630 ns Serial clock hold-time from LE, tCKN 10 ns Hold Time, tPH. 0 ns Latch Enable Minimum Width, tLEN 10 ns Setup Time, tPS 2 ns Timing Diagram (Latched Parallel Mode) Parallel Mode (Direct Parallel Mode & Latched Parallel Mode) Note: The parallel mode is enabled when P/S is set to low. Direct Parallel Mode - The attenuation state is changed by the control voltage inputs D0-D5 directly. The LE (Latch Enable) must be at a logic high at all times to control the attenuator in this manner. Latched Parallel Mode - The attenuation state is selected using the control voltage inputs D0-D5 and set while the LE is in the Low state. The attenuator will not change state while LE is Low. Once all Control Voltage Inputs are at the desired states the LE is pulsed. See timing diagram above for reference. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 12 12 - 4 HMC742HFLP5E v00.0211 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz PUP Truth Table Power-Up States If LE is set to logic LOW at power-up, the logic state of PUP1 and PUP2 determines the power-up state of the part per PUP truth table. If the LE is set to logic HIGH at power-up, the logic state of D0-D5 determines the power-up state of the part per truth table. The DVGA latches in the desired power-up state approximately 200 ms after power-up. Power-On Sequence VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 12 12 - 5 The ideal power-up sequence is: GND, Vdd, digital inputs, RF inputs. The relative order of the digital inputs are not important as long as they are powered after Vdd / GND Absolute Maximum Ratings RF Input Power at Max Gain [1] Gain Relative to Maximum Gain 0 0 0 -31.5 0 1 0 -24 0 0 1 -16 0 1 1 Insertion Loss 1 X X 0 to -31.5 dB Note: The logic state of D0 - D5 determines the power-up state per truth table shown below when LE is high at power-up. Control Voltage Input 17.5 dBm (T = +85 °C) -0.5 to Vdd +0.5V Controller Bias Voltage (Vdd) 5.6V Amplifier Bias Voltage (Vcc) 5.5V Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) (derate 13.3 mW/°C above 85 °C) [2] 1.2 W Thermal Resistance [3] 75.6 °C/W -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A [1] The maximum RF input power increases by the same amount the gain is reduced. The maximum input power at any state is no more than 28 dBm. [2] This value does not include the RF power dissipation in the attenuator. The loss in the attenuator depends on the state of the attenuator. The loss in the attenuator should be included to determine the total power dissipation in the part. [3] This value does not include the RF power dissipation in the attenuator. The thermal resistance at different states of the attenuator can be determined based on note [2] Bias Voltage Vdd (V) PUP2 Truth Table Digital Inputs (LE, SERIN, CLK, P/S, DO-D5, PUP1, PUP2) Storage Temperature PUP1 LE Idd (Typ.) (mA) +5.0 0.12 Vs (V) Is (mA) +5.0 150 Gain Relative to Maximum Gain D5 D4 D3 D2 D1 D0 High High High High High High 0 dB High High High High High Low -0.5 dB High High High High Low High -1 dB High High High Low High High -2 dB -4 dB High High Low High High High High Low High High High High -8 dB Low High High High High High -16 dB Low Low Low Low Low Low -31.5 dB Any combination of the above states will provide a reduction in gain approximately equal to the sum of the bits selected. Control Voltage Table State Vdd = +3V Vdd = +5V Low 0 to 0.5V @ <1 µA 0 to 0.8V @ <1 µA High 2 to 3V @ <1 µA 2 to 5V @ <1 µA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC742HFLP5E v00.0211 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC742HFLP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H742HF XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 12 12 - 6 HMC742HFLP5E v00.0211 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz Pin Descriptions VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 12 12 - 7 Pin Number Function Description 1 AMPIN This pin is DC coupled. An off chip DC blocking capacitor is required. 29 AMPOUT RF output and DC bias (Vcc) for the output stage of the amplifier. 2, 3, 13, 28, 30 - 32 GND These pins and package bottom must be connected to RF/DC ground. 4, 12 ATTIN, ATTOUT These pins are DC coupled and matched to 50 Ohms. Blocking capacitors are required. Select value based on lowest frequency of operation. 5 - 11 N/C No connection 14 SEROUT Serial input data delayed by 6 clock cycles. 15, 16 PUP2, PUP1 18 - 23 D5, D4, D3, D2, D1, D0 24 P/S 25 CLK 26 SERIN 27 LE 17 Vdd Interface Schematic Supply Voltage For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC742HFLP5E v00.0211 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz Application Circuit VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 12 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 12 - 8 HMC742HFLP5E v00.0211 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz Evaluation PCB VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 12 12 - 9 List of Materials for Evaluation PCB 124695[1] Item Description J1 - J2 PCB Mount SMA Connectors J3 18 Pin DC Connector J4 - J6 DC Pin C1, C6, C8, C9 330pF Capacitor, 0402 Pkg. C7 100pF Capacitor. 0402 Pkg. C11 1000 pF Capacitor, 0402 Pkg. C12 1000 pF Capacitor, 0603 Pkg. C14 2.2 µF Capacitor, CASE A Pkg. R1 - R14 100 kOhm Resistor, 0402 Pkg. R15 0 Ohm Resistor, 1206 Pkg. L1 47 nH Inductor, 0603 Pkg. SW1, SW2 SPDT 4 Position DIP Switch U1 HMC742HFLP5E Variable Gain Amplifier PCB [2] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. 116958 Evaluation PCB [1] Reference this number when ordering evaluation PCB [2] Circuit Board Material: Arlon 25FR For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC742HFLP5E v00.0211 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz Notes: VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT 12 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 12 - 10