HMC788LP2E v02.0311 Amplifiers - Driver & Gain Block - SMT 8 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788LP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +30 dBm • LO Driver Applications Gain: 14 dB • Microwave Radio 50 Ohm I/O’s • Test & Measurement Equipment 6 Lead 2x2 mm DFN SMT Package: 4 mm2 • UWB Communications Functional Diagram General Description The HMC788LP2E is a GaAs pHEMT Gain Block MMIC SMT DC to 10 GHz amplifier. This 2x2 mm DFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of many of HIttite’s single and double-balanced mixers with up to +20 dBm output power. The HMC788LP2E offers 14 dB of gain and an output IP3 of +30 dBm while requiring only 76 mA from a +5V supply. The Darlington feedback pair exhibits reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifications, Vcc = 5V, TA = +25° C Parameter Min. Typ. 12 9 14 12 Max. Units dB dB Gain DC - 6.0 GHz 6.0 - 10.0 GHz Gain Variation Over Temperature DC - 6.0 GHz 6.0 - 10.0 GHz 0.012 0.025 dB/ °C dB/ °C Return Loss Input DC - 6.0 GHz 6.0 - 10.0 GHz 16 9 dB dB Return Loss Output DC - 6.0 GHz 6.0 - 10.0 GHz 9 15 dB dB Reverse Isolation DC - 10.0 GHz Output Power for 1 dB Compression (P1dB) DC - 6.0 GHz 6.0 - 10.0 GHz Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) 25 dB 20 18 dBm dBm DC - 6.0 GHz 6.0 - 10.0 GHz 30 27 dBm dBm DC - 6.0 GHz 6.0 - 10.0 GHz 7 9 dB 76 mA 18 15 Note: Data taken with broadband bias tee on device output. 8-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC788LP2E v02.0311 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Gain vs. Temperature S21 S11 S22 20 15 10 GAIN (dB) RESPONSE (dB) 8 20 30 0 +25 C +85 C -40 C 10 -10 -20 5 -30 0 2 4 6 8 10 12 14 16 0 2 FREQUENCY (GHz) 8 10 12 Output Return Loss vs. Temperature 0 0 -5 -5 +25 C +85 C -40 C -10 RETURN LOSS (dB) RETURN LOSS (dB) 6 FREQUENCY (GHz) Input Return Loss vs. Temperature -15 -20 -10 -15 +25 C +85 C -40 C -20 -25 -25 -30 -30 0 2 4 6 8 10 0 12 2 Reverse Isolation vs. Temperature 6 8 10 12 10 12 Noise Figure vs. Temperature 20 -15 15 NOISE FIGURE (dB) -10 +25 C +85 C -40 C -20 4 FREQUENCY (GHz) FREQUENCY (GHz) REVERSE ISOLATION (dB) 4 -25 Amplifiers - Driver & Gain Block - SMT Broadband Gain & Return Loss +25 C +85 C -40 C 10 5 0 -30 0 2 4 6 8 FREQUENCY (GHz) 10 12 0 2 4 6 8 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-2 HMC788LP2E v02.0311 Psat vs. Temperature 25 25 20 20 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 15 +25 C +85 C -40 C 10 15 +25 C +85 C -40 C 10 5 5 0 2 4 6 8 10 0 12 2 4 8 10 12 Power Compression @ 10 GHz Power Compression @ 1 GHz 30 Pout (dBm), GAIN (dB), PAE (%) 60 50 Pout Gain PAE 40 30 20 10 Pout Gain PAE 20 10 0 0 -10 -5 0 5 -10 10 -5 0 5 10 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature [1] Gain & Power vs. Supply Voltage @ 1 GHz 40 GAIN (dB), P1dB (dBm), IP3 (dBm) 35 30 IP3 (dBm) 6 FREQUENCY (GHz) FREQUENCY (GHz) Pout (dBm), GAIN (dB), PAE (%) Amplifiers - Driver & Gain Block - SMT 8 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz 25 +25 C +85 C -40 C 20 15 10 30 Gain P1dB IP3 20 10 0 2 4 6 8 FREQUENCY (GHz) 10 12 4.5 5 5.5 SUPPLY VOLTAGE (V) [1] +5 dBm / Tone Output Power 8-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC788LP2E v02.0311 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Collector Bias Voltage (Vcc) +7V RF Input Power (RFIN)(Vs = +5V) +15 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 10.4 mW/°C above 85 °C) 0.68 W Thermal Resistance (junction to ground paddle) 96 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A Typical Supply Current Vcc (V) Icq (mA) 4.5 64 5.0 76 5.5 88 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. 8 Amplifiers - Driver & Gain Block - SMT Absolute Maximum Ratings PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC788LP2E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] 788 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-4 HMC788LP2E v02.0311 Amplifiers - Driver & Gain Block - SMT 8 8-5 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Pin Descriptions Pin Number Function Description 1, 4, 6 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 2 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 5 RFOUT RF output and DC Bias for the output stage. 3 GND This pin and exposed ground paddle must be connected to RF/DC ground. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC788LP2E v02.0311 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Evaluation PCB Item Description J1 - J2 PC Mount SMA Connector J5, J6 2 mm DC Header C1, C2 0.01 µF Capacitor, 0502 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 2.2 µF Case A Pkg. R1 0 Ohm Resistor, 0402 Pkg. L1 Inductor, Conical 6.35 µH U1 HMC788LP2E PCB [2] 129549 Evaluation PCB [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. Amplifiers - Driver & Gain Block - SMT List of Materials for Evaluation PCB 129550 8 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-6