HITTITE HMC635LC4_10

HMC635LC4
v00.1008
Amplifiers - Driver & Gain Block - SMT
8
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
Typical Applications
Features
The HMC635LC4 is ideal for:
Gain: 18.5 dB [2]
• Point-to-Point Radios
P1dB: +22 dBm [2]
• Point-to-Multi-Point Radios & VSAT
Output IP3: +27 dBm
• LO Driver for Mixers
Saturated Power: +23.5 dBm @ 15% PAE [2]
• Military & Space
Supply Voltage: +5V @ 280 mA
50 Ohm Matched Input/Output
24 Lead Ceramic 4x4mm SMT Package: 16mm2
Functional Diagram
General Description
The HMC635LC4 is a GaAs PHEMT MMIC Driver
Amplifier die which operates between 18 and 40
GHz. The amplifier provides 18.5 dB of gain, +27
dBm Output IP3, and +22 dBm of output power at 1
dB gain compression, while requiring 280 mA from a
+5V supply. Ideal as a driver amplifier for microwave
radio applications, or as an LO driver for mixers
operating between 18 and 40 GHz, the HMC635LC4
is capable of providing up to +23.5 dBm of saturated
output power at 15% PAE. The amplifier’s I/Os are DC
blocked and internally matched to 50 Ohms making it
ideal for integration into Multi-Chip-Modules (MCMs).
Electrical Specifications
TA = +25° C, Vdd= Vdd1, 2, 3, 4 = +5V, Idd= Idd1 + Idd2 + Idd3 + Idd4 = 280mA
Parameter
Min.
Frequency Range
Gain [2]
Typ.
Max.
Min.
18 - 36
15
Gain Variation Over Temperature
18.5
0.045
15
0.06
Typ.
[1]
Max.
Units
36 - 40
GHz
17.5
dB
0.045
0.06
dB/ °C
Input Return Loss
13
7
dB
Output Return Loss
10
7
dB
Output Power for 1 dB Compression (P1dB) [2]
19
Saturated Output Power (Psat) [2]
Output Third Order Intercept (IP3)
Noise Figure
[2]
Total Supply Current (Idd1 + Idd2 + Idd3 + Idd4)
22
16
23.5
22
27
21
21
dBm
21.5
dBm
26
dBm
7
7
dB
280
280
mA
[1] Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical.
[2] Board loss subtracted out for gain, power and noise figure measurements.
8-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC635LC4
v00.1008
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
Gain vs. Temperature [1]
25
15
20
S21
S11
S22
5
-5
-15
15
+25C
- 40C
10
5
-25
0
10
15
20
25
30
35
40
45
50
16
21
FREQUENCY (GHz)
31
36
41
Output Return Loss vs. Temperature
0
0
+25C
- 40C
-5
+25C
- 40C
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
26
FREQUENCY (GHz)
Input Return Loss vs. Temperature
-10
-15
-10
-15
-20
-25
-20
16
21
26
31
36
16
41
21
P1dB vs. Temperature [1]
31
36
41
36
41
Psat vs. Temperature [1]
26
24
24
Psat (dBm)
26
22
+25C
- 40C
20
26
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB (dBm)
8
18
Amplifiers - Driver & Gain Block - SMT
25
GAIN (dB)
RESPONSE (dB)
Broadband Gain & Return Loss [1]
22
+25C
- 40C
20
18
16
16
16
21
26
31
36
41
16
FREQUENCY (GHz)
21
26
31
FREQUENCY (GHz)
[1] Board loss subtracted out for gain, power and noise figure measurements.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8-2
HMC635LC4
v00.1008
Power Compression @ 30 GHz [1]
Power Compression @ 40 GHz [1]
30
Pout (dBm)
Gain (dB)
PAE (%)
25
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
30
20
15
10
5
0
-15
-10
-5
0
5
Pout (dBm)
Gain (dB)
PAE (%)
25
20
15
10
5
0
-15
10
-10
INPUT POWER (dBm)
0
5
10
Noise Figure vs. Temperature [1]
15
40
36
+25 C
-40 C
NOISE FIGURE (dB)
12
+25 C
-40 C
32
IP3 (dBm)
-5
INPUT POWER (dBm)
Output IP3 vs. Temperature
28
24
9
6
3
20
0
16
16
21
26
31
36
16
41
21
Gain & Power vs.
Supply Voltage @ 30 GHz [1]
31
36
41
Reverse Isolation vs. Temperature
26
0
-10
22
ISOLATION (dB)
24
Gain
P1dB
Psat
20
18
16
4.5
26
FREQUENCY (GHz)
FREQUENCY (GHz)
GAIN (dB), P1dB (dBm), Psat (dBm)
Amplifiers - Driver & Gain Block - SMT
8
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
+25C
- 40C
-20
-30
-40
-50
-60
-70
4.7
4.9
5.1
5.3
5.5
16
Vdd (V)
21
26
31
36
41
FREQUENCY (GHz)
[1] Board loss subtracted out for gain, power and noise figure measurements.
8-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC635LC4
Absolute Maximum Ratings
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd1, 2, 3, 4)
+5.5V
Vdd (V)
Idd (mA)
Gate Bias Voltage (Vgg1, Vgg2)
-3 to 0V
4.5
277
RF Input Power (RFIN)(Vdd = +5 Vdc)
15 dBm
5.0
280
Channel Temperature
175 °C
5.5
286
Continuous Pdiss (T= 70 °C)
(derate 15.1 mW/°C above 70 °C)
1.575 W
Thermal Resistance
(channel to package base)
66.4 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +70 °C
Note: Amplifier will operate over full voltage ranges shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80
MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST
BE SOLDERED TO PCB RF GROUND.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8
Amplifiers - Driver & Gain Block - SMT
v00.1008
8-4
HMC635LC4
v00.1008
Amplifiers - Driver & Gain Block - SMT
8
8-5
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
Pin Descriptions
Pin Number
Function
Description
1, 2, 4 - 8, 10,
12 - 15, 17 - 19, 24,
Ground Paddle
GND
These pins and package bottom must be connected to
RF/DC ground
3
RFIN
This pad is AC coupled
and matched to 50 Ohms.
16
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
9, 11
Vgg1, Vgg2
Gate control for amplifier, please follow “MMIC Amplifier
Biasing Procedure” application note. See assembly diagram for
required external components.
20 - 23
Vdd4 - Vdd1
Power Supply Voltage for the amplifier. See assembly
diagram for required external components.
Interface Schematic
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC635LC4
v00.1008
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
Evaluation PCB
Item
Description
J1 - J2
2.92 mm PC Mount K-Connector
VD1 - VD4,
VGG1, VGG2
DC Pin
C1 - C6
100 pF Capacitor, 0402 Pkg.
C7 - C12
1000 pF Capacitor, 0603 Pkg.
C13 - C18
4.7 µF Capacitor, Tantalum, Case A
U1
HMC635LC4 Driver Amplifier
PCB [2]
122761 Evaluation PCB [3]
[1] Reference this number when ordering complete evaluation PCB
[1]
The circuit board used in the application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Amplifiers - Driver & Gain Block - SMT
List of Materials for Evaluation 122763
8
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
[3] Due to the very high frequency operation of this product
a custom LC4 PCB footprint and solder stencil are required
for this design. Performance shown in this data sheet
was produced using this custom footprint. DO NOT USE
Hittite’s standard LC4 footprint. Please contact Applications
for details.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8-6