HMC635LC4 v00.1008 Amplifiers - Driver & Gain Block - SMT 8 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Typical Applications Features The HMC635LC4 is ideal for: Gain: 18.5 dB [2] • Point-to-Point Radios P1dB: +22 dBm [2] • Point-to-Multi-Point Radios & VSAT Output IP3: +27 dBm • LO Driver for Mixers Saturated Power: +23.5 dBm @ 15% PAE [2] • Military & Space Supply Voltage: +5V @ 280 mA 50 Ohm Matched Input/Output 24 Lead Ceramic 4x4mm SMT Package: 16mm2 Functional Diagram General Description The HMC635LC4 is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 40 GHz. The amplifier provides 18.5 dB of gain, +27 dBm Output IP3, and +22 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635LC4 is capable of providing up to +23.5 dBm of saturated output power at 15% PAE. The amplifier’s I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs). Electrical Specifications TA = +25° C, Vdd= Vdd1, 2, 3, 4 = +5V, Idd= Idd1 + Idd2 + Idd3 + Idd4 = 280mA Parameter Min. Frequency Range Gain [2] Typ. Max. Min. 18 - 36 15 Gain Variation Over Temperature 18.5 0.045 15 0.06 Typ. [1] Max. Units 36 - 40 GHz 17.5 dB 0.045 0.06 dB/ °C Input Return Loss 13 7 dB Output Return Loss 10 7 dB Output Power for 1 dB Compression (P1dB) [2] 19 Saturated Output Power (Psat) [2] Output Third Order Intercept (IP3) Noise Figure [2] Total Supply Current (Idd1 + Idd2 + Idd3 + Idd4) 22 16 23.5 22 27 21 21 dBm 21.5 dBm 26 dBm 7 7 dB 280 280 mA [1] Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical. [2] Board loss subtracted out for gain, power and noise figure measurements. 8-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC635LC4 v00.1008 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Gain vs. Temperature [1] 25 15 20 S21 S11 S22 5 -5 -15 15 +25C - 40C 10 5 -25 0 10 15 20 25 30 35 40 45 50 16 21 FREQUENCY (GHz) 31 36 41 Output Return Loss vs. Temperature 0 0 +25C - 40C -5 +25C - 40C -5 RETURN LOSS (dB) RETURN LOSS (dB) 26 FREQUENCY (GHz) Input Return Loss vs. Temperature -10 -15 -10 -15 -20 -25 -20 16 21 26 31 36 16 41 21 P1dB vs. Temperature [1] 31 36 41 36 41 Psat vs. Temperature [1] 26 24 24 Psat (dBm) 26 22 +25C - 40C 20 26 FREQUENCY (GHz) FREQUENCY (GHz) P1dB (dBm) 8 18 Amplifiers - Driver & Gain Block - SMT 25 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss [1] 22 +25C - 40C 20 18 16 16 16 21 26 31 36 41 16 FREQUENCY (GHz) 21 26 31 FREQUENCY (GHz) [1] Board loss subtracted out for gain, power and noise figure measurements. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-2 HMC635LC4 v00.1008 Power Compression @ 30 GHz [1] Power Compression @ 40 GHz [1] 30 Pout (dBm) Gain (dB) PAE (%) 25 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 30 20 15 10 5 0 -15 -10 -5 0 5 Pout (dBm) Gain (dB) PAE (%) 25 20 15 10 5 0 -15 10 -10 INPUT POWER (dBm) 0 5 10 Noise Figure vs. Temperature [1] 15 40 36 +25 C -40 C NOISE FIGURE (dB) 12 +25 C -40 C 32 IP3 (dBm) -5 INPUT POWER (dBm) Output IP3 vs. Temperature 28 24 9 6 3 20 0 16 16 21 26 31 36 16 41 21 Gain & Power vs. Supply Voltage @ 30 GHz [1] 31 36 41 Reverse Isolation vs. Temperature 26 0 -10 22 ISOLATION (dB) 24 Gain P1dB Psat 20 18 16 4.5 26 FREQUENCY (GHz) FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm) Amplifiers - Driver & Gain Block - SMT 8 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz +25C - 40C -20 -30 -40 -50 -60 -70 4.7 4.9 5.1 5.3 5.5 16 Vdd (V) 21 26 31 36 41 FREQUENCY (GHz) [1] Board loss subtracted out for gain, power and noise figure measurements. 8-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC635LC4 Absolute Maximum Ratings GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd1, 2, 3, 4) +5.5V Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1, Vgg2) -3 to 0V 4.5 277 RF Input Power (RFIN)(Vdd = +5 Vdc) 15 dBm 5.0 280 Channel Temperature 175 °C 5.5 286 Continuous Pdiss (T= 70 °C) (derate 15.1 mW/°C above 70 °C) 1.575 W Thermal Resistance (channel to package base) 66.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +70 °C Note: Amplifier will operate over full voltage ranges shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 Amplifiers - Driver & Gain Block - SMT v00.1008 8-4 HMC635LC4 v00.1008 Amplifiers - Driver & Gain Block - SMT 8 8-5 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Pin Descriptions Pin Number Function Description 1, 2, 4 - 8, 10, 12 - 15, 17 - 19, 24, Ground Paddle GND These pins and package bottom must be connected to RF/DC ground 3 RFIN This pad is AC coupled and matched to 50 Ohms. 16 RFOUT This pad is AC coupled and matched to 50 Ohms. 9, 11 Vgg1, Vgg2 Gate control for amplifier, please follow “MMIC Amplifier Biasing Procedure” application note. See assembly diagram for required external components. 20 - 23 Vdd4 - Vdd1 Power Supply Voltage for the amplifier. See assembly diagram for required external components. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC635LC4 v00.1008 GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Evaluation PCB Item Description J1 - J2 2.92 mm PC Mount K-Connector VD1 - VD4, VGG1, VGG2 DC Pin C1 - C6 100 pF Capacitor, 0402 Pkg. C7 - C12 1000 pF Capacitor, 0603 Pkg. C13 - C18 4.7 µF Capacitor, Tantalum, Case A U1 HMC635LC4 Driver Amplifier PCB [2] 122761 Evaluation PCB [3] [1] Reference this number when ordering complete evaluation PCB [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. Amplifiers - Driver & Gain Block - SMT List of Materials for Evaluation 122763 8 [2] Circuit Board Material: Rogers 4350 or Arlon 25FR [3] Due to the very high frequency operation of this product a custom LC4 PCB footprint and solder stencil are required for this design. Performance shown in this data sheet was produced using this custom footprint. DO NOT USE Hittite’s standard LC4 footprint. Please contact Applications for details. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-6