HMC797LP5E v02.0811 9 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Typical Applications Features The HMC797LP5E is ideal for: High P1dB Output Power: 28 dBm • Test Instrumentation High Psat Output Power: 29.5 dBm • Microwave Radio & VSAT High Gain: 13.5 dB • Military & Space High Output IP3: 39 dBm • Telecom Infrastructure Supply Voltage: +10 V @ 400 mA • Fiber Optics 50 Ohm Matched Input/Output Amplifiers - Linear & Power - SMT 32 Lead 5x5 mm SMT Package: 25 mm² Functional Diagram General Description The HMC797LP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 22 GHz. The amplifier provides 13.5 dB of gain, 39 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 400 mA from a +10 V supply. This versatile PA exhibits a positive gain slope from 4 to 20 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797LP5E amplifier I/Os are internally matched to 50 Ohms facilitating integration into mutli-chipmodules (MCMs), is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components. Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 400 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. DC - 12 11 Typ. Max. Min. 12 - 18 12.5 11 13.5 11 Typ. Max. Units 18 - 22 GHz 13.5 dB Gain Flatness ±0.7 ±0.5 ±0.5 dB Gain Variation Over Temperature 0.012 0.008 0.008 dB/ °C dB Input Return Loss 13 15 15 Output Return Loss 12 16 13 dB 25.5 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 26 28 25 27 23.5 29.5 29 27 dBm Output Third Order Intercept (IP3) 39 37 35 dBm Noise Figure 3.5 4 6 dB Supply Current (Idd) (Vdd= 10V, Vgg1= -0.8V Typ.) 400 440 400 440 400 440 mA * Adjust Vgg1 between -2 to 0 V to achieve Idd = 400 mA typical. 9-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC797LP5E v02.0811 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Gain vs. Temperature 20 18 10 16 14 -10 12 9 10 -20 +25C +85C -40C 8 -30 0 5 10 15 20 25 6 30 0 FREQUENCY (GHz) 0 -10 -10 RETURN LOSS (dB) RETURN LOSS (dB) 12 16 20 24 Output Return Loss vs. Temperature 0 -20 +25C +85C -40C -20 +25C +85C -40C -30 -40 -40 0 4 8 12 16 20 0 24 4 8 12 16 20 24 FREQUENCY (GHz) FREQUENCY (GHz) Noise Figure vs. Temperature Low Frequency Gain & Return Loss 10 25 15 +25C +85C -40C 8 5 NOISE FIGURE(dB) RESPONSE (dB) 8 FREQUENCY (GHz) Input Return Loss vs. Temperature -30 4 S21 S11 S22 -5 -15 -25 Amplifiers - Linear & Power - SMT S21 S11 S22 0 GAIN (dB) RESPONSE (dB) Gain & Return Loss 6 4 2 -35 -45 0.00001 0 0.0001 0.001 0.01 0.1 FREQUENCY (GHz) 1 10 0 4 8 12 16 20 24 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-2 HMC797LP5E v02.0811 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz P1dB vs. Supply Voltage 32 32 30 30 28 28 P1dB (dBm) 9 P1dB (dBm) P1dB vs. Temperature 26 +25C +85C -40C 24 22 20 20 0 4 8 12 16 20 0 24 4 8 16 20 24 Psat vs. Supply Voltage 32 32 30 30 28 28 Psat (dBm) Psat (dBm) Psat vs. Temperature 26 +25C +85C -40C 24 12 FREQUENCY (GHz) FREQUENCY (GHz) 26 +8V +10V +11V 24 22 22 20 20 0 4 8 12 16 20 24 0 4 FREQUENCY (GHz) 30 30 28 28 Psat (dBm) 32 26 16 20 24 20 24 300 mA 350 mA 400 mA 26 24 300 mA 350 mA 400 mA 22 12 Psat vs. Supply Current 32 24 8 FREQUENCY (GHz) P1dB vs. Supply Current P1dB (dBm) Amplifiers - Linear & Power - SMT +8V +10V +11V 24 22 22 20 20 0 4 8 12 16 FREQUENCY (GHz) 9-3 26 20 24 0 4 8 12 16 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC797LP5E GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Output IP3 vs. Supply Voltage @ Pout = 18 dBm / Tone 45 45 40 40 35 35 IP3 (dBm) IP3 (dBm) Output IP3 vs. Temperature @ Pout = 18 dBm / Tone 30 +25C +85C -40C 25 30 9 +8V +10V +11V 25 20 20 0 4 8 12 16 20 24 0 4 8 FREQUENCY (GHz) 12 16 20 24 FREQUENCY (GHz) Output IP3 vs. Supply Currents @ Pout = 18 dBm / Tone Output IM3 @ Vdd = +8V 45 70 60 40 IM3 (dBc) IP3 (dBm) 50 35 300 mA 350 mA 400 mA 30 40 30 20 25 2 GHz 10 GHz 18 GHz 22 GHz 10 20 0 0 4 8 12 16 20 24 10 12 14 FREQUENCY (GHz) 70 60 60 50 50 IM3 (dBc) IM3 (dBc) 70 40 30 20 22 24 20 22 24 40 30 20 2 GHz 10 GHz 18 GHz 22 GHz 10 18 Output IM3 @ Vdd = +11V Output IM3 @ Vdd = +10V 20 16 Pout/TONE (dBm) 2 GHz 10 GHz 18 GHz 22 GHz 10 0 Amplifiers - Linear & Power - SMT v02.0811 0 10 12 14 16 18 Pout/TONE (dBm) 20 22 24 10 12 14 16 18 Pout/TONE (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-4 HMC797LP5E v02.0811 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Power Compression @ 10 GHz Reverse Isolation vs. Temperature 0 9 ISOLATION (dB) -10 Pout (dBm), GAIN (dB), PAE (%) 32 +25C +85C -40C -20 -30 -40 -50 Pout Gain PAE 24 20 16 12 8 4 0 -70 0 4 8 12 16 20 24 0 3 9 12 15 18 21 24 Gain & Power vs. Supply Voltage @ 10 GHz Gain & Power vs. Supply Current @ 10 GHz 35 Gain (dB), P1dB (dBm), Psat (dBm) 35 30 25 Gain P1dB Psat 20 15 10 300 6 INPUT POWER (dBm) FREQUENCY (GHz) 30 25 Gain P1dB Psat 20 15 10 320 340 360 380 400 8 9 Idd (mA) 10 11 Vdd (V) Power Dissipation 6 POWER DISSIPATION (W) Gain (dB), P1dB (dBm), Psat (dBm) Amplifiers - Linear & Power - SMT -60 28 5 4 3 2 Max Pdis @ 85C 2 GHz 10 GHz 20 GHz 1 0 0 4 8 12 16 20 INPUT POWER (dBm) 9-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC797LP5E v02.0811 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Second Harmonics vs. Vdd @ Pout = 18 dBm, Idd = 400 mA [1] 70 70 60 60 50 SECOND HARMONIC (dBc) +25C +85C -40C 40 30 20 10 +8V +10V +11V 50 40 9 30 20 10 0 0 0 4 8 12 16 20 24 0 4 FREQUENCY(GHz) 16 20 24 Second Harmonics vs. Pout Vdd = 10V & Vgg = 3.5V & Idd = 400 mA 70 70 60 60 SECOND HARMONIC (dBc) SECOND HARMONIC (dBc) 12 FREQUENCY(GHz) Second Harmonics vs. Idd @ Pout = 18 dBm, Vgg2 = 3.5V 300 mA 350 mA 400 mA 50 8 40 30 20 10 +10 dBm +12 dBm +14 dBm +16 dBm +18 dBm +20 dBm 50 40 30 20 10 0 0 0 4 8 12 16 FREQUENCY(GHz) 20 24 0 4 8 12 16 20 24 FREQUENCY(GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - SMT SECOND HARMONIC (dBc) Second Harmonics vs. Temperature @ Pout = 18 dBm, Vdd = 10V & Vgg = 3.5V 9-6 HMC797LP5E v02.0811 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Reliability Information Absolute Maximum Ratings Amplifiers - Linear & Power - SMT 9 Nominal Drain Supply to GND +12.0 V Gate Bias Voltage (Vgg1) -3.0 to 0 Vdc Gate Bias Current (Igg1) < +10 mA Gate Bias Voltage (Vgg2) +2.0 V to (Vdd - 6.5 V) Gate Bias Current (Igg2) < +10 mA Continuous Pdiss (T= 85 °C) (derate 69 mW/°C above 85 °C) 4.5 W RF Input Power +27 dBm Output Power into VSWR >7:1 +29 dBm Storage Temperature -65 to 150 °C Max Peak Reflow Temperature 260 °C ESD Sensitivity (HBM) Class 1A Junction Temperature to Maintain 1 Million Hour MTTF 150 °C Nominal Junction Temperature (T=85 °C, Vdd = 10 V) 144 °C Thermal Resistance (channel to ground paddle) 14.6 °C/W Operating Temperature -40 to +85 °C Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +9 400 +10 400 +11 400 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC797LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H797 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C 9-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC797LP5E v02.0811 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Pin Descriptions Function Description GND These pins & exposed ground paddle must be connected to RF/DC ground. 2 VGG2 Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +3.5V should be applied to Vgg2. 3, 7, 10 - 12, 14, 18, 19, 23, 26 28, 31 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 5 RFIN This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required. 13 VGG1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note. 15 ACG4 Interface Schematic Low frequency termination. Attach bypass capacitor per application circuit herein. 16 ACG3 21 RFOUT & VDD 29 ACG2 30 ACG1 RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Low frequency termination. Attach bypass capacitor per application circuit herein. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9 Amplifiers - Linear & Power - SMT Pin Number 1, 4, 6, 8, 9, 17, 20, 22, 24, 25, 32 Package Bottom 9-8 HMC797LP5E v02.0811 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Evaluation PCB Amplifiers - Linear & Power - SMT 9 List of Materials for Evaluation PCB 130784 [1] Item Description J1, J2 SMA Connectors J3, J4 DC Pins C1 - C4 100 pF Capacitor, 0402 Pkg. C5, C8 10 kpF Capacitor, 0402 Pkg. C9 - C11 4.7 µF Capacitor, Tantalum R1, R2 0 OHM Resistor, 0402 Pkg U1 HMC797LP5E Power Amplifier PCB [2] 127135 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [2] Circuit Board Material: Rogers 4350 or Arlon FR4 9-9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC797LP5E v02.0811 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Application Circuit Amplifiers - Linear & Power - SMT 9 NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9 - 10