HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.8 GHz applications: Gain: 31 dB • WiMAX 802.16 2% EVM @ Pout = +22 dBm 40% PAE @ +32.5 dBm pout • Fixed Wireless Access Amplifiers - Linear & Power - SMT 9 with 54Mbps OFDM Signal • Wireless Local Loop +46 dBm Output IP3 Integrated Power Control (Vpd) Functional Diagram Single +5V Supply General Description The HMC409LP4 & HMC409LP4E are high efficiency GaAs InGaP HBT MMIC Power amplifiers operating from 3.3 to 3.8 GHz. The amplifier is packaged in a low cost, leadless SMT package. Utilizing a minimum of external components the amplifier provides 31 dB of gain and +32.5 dBm of saturated power from a +5V supply voltage. The power control (Vpd) can be used for full power down or RF output power/current control. For +22 dBm OFDM output power (64 QAM, 54 Mbps), the HMC409LP4 & HMC409LP4E achieve an error vector magnitude (EVM) of 2%, meeting WiMAX 802.16 linearity requirements. Electrical Specifications, TA = +25° C, Vs = +5V, Vpd = +5V, Vbias=+5V Parameter Min. Frequency Range Typ. Max. Min. 3.3 - 3.4 Gain 30 Gain Variation Over Temperature 32 0.04 Input Return Loss 29 0.05 Output Return Loss Saturated Output Power (Psat) 30 41 45 Error Vector Magnitude @ 3.5 GHz (54 Mbps OFDM Signal @ +22 dBm Pout) 28 0.05 30.5 28 45.5 41 Units 30 dB 0.045 dB/ °C dB 10 dB 30.5 dBm 32 dBm 45 dBm 2 Noise Figure Max. GHz 15 32.5 42 Typ. 3.6 - 3.8 0.035 14 28 32 Output Third Order Intercept (IP3) [2] Min. 15 13 28 Max. 31.5 0.04 10 Output Power for 1dB Compression (P1dB) Typ. 3.4 - 3.6 % 5.8 5.8 6 dB Supply Current (Icq) Vs= Vcc1 + Vcc2= +5V 615 615 615 mA Control Current (Ipd) Vpd = +5V 4 4 4 mA tOn, tOff 20 20 20 ns 10 10 10 mA Switching Speed Bias Current (Ibias) Note 1: Specifications and data reflect HMC409LP4 measured using the application circuit found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note 2: Two-tone output power of +15 dBm per tone, 1 MHz spacing. 9-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Gain vs. Temperature 38 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 35 32 29 26 20 2 2.5 3 3.5 4 4.5 3 5 3.2 Input Return Loss vs. Temperature 3.6 3.8 4 Output Return Loss vs. Temperature 0 0 -5 +25 C +85 C -40 C -5 RETURN LOSS (dB) RETURN LOSS (dB) 3.4 FREQUENCY (GHz) FREQUENCY (GHz) -10 -15 +25 C +85 C -40 C -20 -10 -15 -20 -25 -25 -30 3 3.2 3.4 3.6 3.8 3 4 3.2 FREQUENCY (GHz) 3.6 3.8 4 Power Down Isolation vs. Temperature 0 0 -10 -10 ISOLATION (dB) +25 C +85 C -40 C -20 3.4 FREQUENCY (GHz) Reverse Isolation vs. Temperature ISOLATION (dB) 9 +25 C +85 C -40 C 23 -30 -40 -50 +25 C +85 C -40 C -20 Amplifiers - Linear & Power - SMT S21 S11 S22 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss -30 -40 -50 -60 -60 3 3.2 3.4 3.6 FREQUENCY (GHz) 3.8 4 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-2 HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz 34 34 32 32 PSAT (dBm) 36 30 28 26 28 +25 C +85 C -40 C 24 22 22 3 3.2 3.4 3.6 3.8 4 3 3.1 3.2 3.3 FREQUENCY (GHz) 3.6 3.7 3.8 3.9 4 Pout (dBm), GAIN (dB), PAE (%) 40 46 IP3 (dBm) 3.5 Power Compression @ 3.5 GHz 50 42 +25 C +85 C -40 C 38 34 3 3.2 3.4 3.6 3.8 35 30 25 20 15 10 Pout (dBm) Gain (dB) PAE (%) 5 0 -20 30 4 -16 Gain & Power vs. Supply Voltage 12 34 10 33 32 31 Gain Psat P1dB 29 -8 -4 0 4 8 Noise Figure vs. Temperature 35 30 -12 INPUT POWER (dBm) FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm) 3.4 FREQUENCY (GHz) Output IP3 vs. Temperature 28 4.75 +25 C +85 C -40 C 8 6 4 2 0 5 Vcc SUPPLY VOLTAGE (Vdc) 9-3 30 26 +25 C +85 C -40 C 24 Amplifiers - Linear & Power - SMT Psat vs. Temperature 36 NOISE FIGURE (dB) 9 P1dB (dBm) P1dB vs. Temperature 5.25 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Power Dissipation 700 30 600 4.4 500 25 20 400 Icc 300 15 10 200 Gain Psat P1dB 5 100 0 0 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 4 Max Pdiss @ +85C 3.6 3.2 9 2.8 2.4 2 -20 5.5 -16 -12 -8 -4 0 4 8 INPUT POWER (dBm) Vpd (Vdc) EVM vs. Temperature @ 3.5 GHz OFDM 54 Mbps Signal ERROR VECTOR MAGNITUDE (%) 14 12 10 +25 C +85 C -40 C 8 6 4 2 0 10 12 14 16 18 20 22 24 26 28 30 OUTPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - SMT 35 POWER DISSIPATION (W) 40 800 Icc (mA) GAIN (dB), P1dB (dBm), Psat (dBm) Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz 9-4 HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Typical Supply, Current vs. Supply Voltage, Vcc1 = Vcc2 = Vpd Absolute Maximum Ratings Amplifiers - Linear & Power - SMT 9 Collector Bias Voltage (Vcc1, Vcc2) +5.5 Vdc Vs (Vdc) Icq (mA) Control Voltage (Vpd) +5.5 Vdc 4.75 516 RF Input Power (RFIN)(Vs = Vpd = +5Vdc) +10 dBm 5.0 615 Junction Temperature 150 °C 5.25 721 Continuous Pdiss (T = 85 °C) (derate 57.5 mW/°C above 85 °C) 3.74 W Thermal Resistance (junction to ground paddle) 17.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC409LP4 Low Stress Injection Molded Plastic Sn/Pb Solder MSL3 [1] HMC409LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL3 [2] Package Marking [3] H409 XXXX H409 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 9-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Application Circuit Recommended Component Values TL1 TL2 TL3 C1 - C5 100pF Impedance 50 Ohm 27 Ohm 50 Ohm C6 - C7 1000pF Physical Length 0.068” 0.062” 0.164” C8 10 pF Electrical Length 12˚ 11˚ 29˚ C9 0.5 pF PCB Material: 10 mil Rogers 4350, Er = 3.48 C10 1.6 pF C11 4.7µF L1, L2 3.9 nH L3 2.2 nH R1 56 Ohm For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - SMT 9 9-6 HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Pin Descriptions Pin Number Function Description 1-3, 5, 6, 8, 10 -14, 18, 19, 21, 22, 24 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 4 RFIN This pin is AC coupled and matched to 50 Ohms. 7 Vpd Power control pin. For maximum power, this pin should be connected to 5V thru a 56 Ω resistor. A high-voltage or small resistor is not recommended for lower idle current. This voltage can be reduced or the resistor increased. 9 Vbias DC power supply pin for bias circuitry 15, 16, 17 RFOUT RF output and DC bias for the output stage. 20 Vcc2 Power supply voltage for the second amplifier stage. External bypass capacitors and pull up choke are required as shown in the application schematic. 23 Vcc1 Power supply voltage for the first amplifier stage. External bypass capacitors are required as shown in the application schematic. GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. Amplifiers - Linear & Power - SMT 9 9-7 Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Evaluation PCB List of Materials for Evaluation PCB 108355 Item Description J1 - J2 PCB Mount SMA RF Connector J3, J4 2 mm DC Header C1 - C5 100 pF Capacitor, 0402 Pkg. C6 - C7 1000 pF Capacitor, 0603 Pkg. C8 10 pF Capacitor, 0402 Pkg. C9 0.5 pF Capacitor, 0603 Pkg. C10 1.6 pF Capacitor, 0603 Pkg. C11 4.7 µF, Tantalum L1, L2 3.9 nH Inductor, 0603 Pkg. L3 2.2 nH Inductor, 0402 Pkg. Toko R1 56 Ohm Resistor, 0603 Pkg. U1 HMC409LP4 / HMC409LP4E Amplifier PCB [2] 108353 Eval Board [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. Amplifiers - Linear & Power - SMT 9 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-8