HT7612/HT7612B General Purpose PIR Controller Features · Operating voltage: 2.7V ~ 5.5V · 40 second power-on delay · Standby current typical: · 10 second high speed warm-up for test mode · 1~3783 second adjustable PIR turn on time. HT7612: 17mA HT7612B: 19mA · Output drive for Relay, TRIAC and LED · CDS input · Output drive buzzer alarm · CDS debounce time: · Low voltage detector HT7612: 15~20 seconds HT7612B: < 3 seconds · Override function · 16-pin DIP/NSOP packages · High noise immunity Applications · PIR light control · Alarm system · Motion detectors · Auto door bells General Description The HT7612/HT7612B is PIR controller specifically designed to interface to PIR sensors to implement motion sensing application products such as intruder alarms. The controller has the features of PIR sensitivity adjust- ment and a CDS can be connected to the controller for automatic detection. The HT7612/HT7612B is available in low profile NSOP & DIP packages. Block Diagram V D D V S S O P 2 O O P 2 N O P 1 O C o m p a ra to r C ir c u it A m p lifie r C ir c u it O P 1 N O P 1 P V R E F L D O & R e fe r a n c e V o lta g e B U Z /L V D B U Z /C D S D T T im in g D e la y C o n tro l C ir c u it R E L A Y /L E D T R A IC T E S T /S C S y s ta m O s c illa to r Z C M O D E Rev. 1.50 1 February 21, 2011 HT7612/HT7612B Pin Assignment O P 1 P 1 1 6 T E S T /S C O P 1 N 2 1 5 Z C O P 1 O 3 1 4 B U Z /L V D O P 2 N 4 1 3 B U Z /C D S O P 2 O 5 1 2 M O D E V R E F 6 1 1 R E L A Y /L E D D T 7 1 0 T R IA C V S S 8 9 V D D H T 7 6 1 2 /H T 7 6 1 2 B 1 6 D IP -A /N S O P -A Pin Description Pin Name OP1P I/O Mask Option I PMOS Description OP1 Non-inverting Input OP1N I PMOS OP1 Inverting Input OP1O O CMOS OP1 Output OP2N I PMOS OP2 Inverting Input OP2O O CMOS OP2 Output VREF O NMOS Reference Voltage DT I PMOS Delay time oscillator input. Connected to an external RC to adjust the output duration. TEST/SC O CMOS TEST and SC share the same pin. TEST is used to test the 32 Khz system frequency. SC is used to detect LVD and CDS. VSS ¾ ¾ Negative power supply, ground VDD ¾ ¾ Positive power supply RELAY/LED O CMOS RELAY and LED share the same pin. Active high - a RELAY is driven through an external NPN transistor. BUZ/CDS I/O CMOS BUZ and CDS share the same pin. The BUZ output can drive a piezo buzzer. CDS is connected to a CDS voltage divider for daytime/night auto-detection. A low input to this pin can disable the PIR input. CDS is connected to the input of a internal comparator with a debounce time of 15~20 seconds for the HT7612 and less than 3 seconds for the HT7612B. BUZ/LVD I/O CMOS BUZ and LVD share the same pin. The BUZ output can drive a piezo buzzer LVD is used as an input low voltage detector. ZC I ¾ TRIAC O CMOS TRIAC output drive. The output is a pulse output when active. CMOS Operating mode selection input. VDD: Output is always ON VSS: Output is always OFF Open: Auto detection Test Mode Input. MODE Rev. 1.50 I AC zero crossing detector input. 2 February 21, 2011 HT7612/HT7612B Absolute Maximum Ratings Supply Voltage ...........................VSS-0.3V to VSS+6.0V Storage Temperature ............................-50°C to 125°C Input Voltage..............................VSS-0.3V to VDD+0.3V Operating Temperature...........................-40°C to 85°C Zero Crossing Current ................................Max. 300mA Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. Electrical Characteristics Symbol Parameter Ta=25°C Test Conditions Max. Unit 2.7 4.0 5.5 V 3.201 3.300 3.399 V ¾ 200 ¾ ¾ mA HT7612: DT off, OPAMP off, VREF no load ¾ 17 23 mA HT7612B: DT off, OPAMP on, VREF no load ¾ 19 25 mA ¾ Operating Voltage ¾ VREF Reference Voltage - see Note 5V IREF Driving Current 5V Standby Current Typ. Conditions VDD ISTB Min. VDD 5V Cf=1mF IOH1 TRIAC Source Current 5V VOH=4.5V -20 -40 ¾ mA IOL1 TRIAC Sink Current 5V VOL=0.5V 20 40 ¾ mA IOH2 BUZ & BUZ Source Current 5V VOH=4.5V -5 -10 ¾ mA IOL2 BUZ & BUZ Sink Current 5V VOL=0.5V 10 20 ¾ mA IOH3 RELAY/LED Source Current 5V VOH=4.5V -5 -10 ¾ mA IOL3 RELAY/LED Sink Current 5V VOL=0.5V 10 20 ¾ mA VIH MODE High Input Voltage ¾ ¾ 0.7VDD ¾ ¾ V VIL MODE Low Input Voltage ¾ ¾ ¾ ¾ 0.3VDD V VTH1 ZC High Transfer Voltage ¾ ¾ 0.7VDD ¾ ¾ V VTL1 ZC Low Transfer Voltage ¾ ¾ ¾ ¾ 0.3VDD V VOS OP Amp Input Offset Voltage 5V ¾ 10 ¾ mV VLVD Low Voltage Detector Voltage ¾ ¾ 0.99 1.10 1.21 V fSYS System Oscillator Frequency - IRC 5V ¾ 28.8 32.0 35.2 kHz 15.2 16.0 16.8 kHz CL=10pF fDT Delay Time Frequency - ERC ¾ VREF, RDT=30kW, CDT=3000pF AVO OP Amp Open Loop Gain 5V RL=510kW to VSS 60 80 ¾ dB GBW OP Amp Gain Band Bandwidth 5V RL=510kW, CL=100pF 2.5 5.0 ¾ kHz VH High Level Comparator Window 5V 1/2 VREF + 1/6 VREF 1.98 2.20 2.42 V VL Low Level Comparator Window 5V 1/2 VREF - 1/6 VREF 0.99 1.10 1.21 V Note: When VDD is less than 3.4V, then the VREF voltage will be equal to VDD. If the VREF voltage is less than the PIR working voltage, then the PIR sensor will not work normally. Rev. 1.50 3 February 21, 2011 HT7612/HT7612B Functional Description RELAY The following gives a description of the functional pins on the device. B U Z /L V D TEST The TEST pin is an output which is used to test the 32 KHz system frequency. Note that the pin is a shared TEST/SC pin. The TEST output pin can be used within 1 second after power-on. B U Z /C D S Fig.2 Buzzer Pin Drive Buzzer The RELAY pin is a CMOS output structure which is normally low and active high. The high duration is controlled by the delay time oscillator and the MODE pin. The RELAY pin structure is shown in Fig.3. SC The SC pin is an output pin which is used to for LVD and CDS detection. Note the pin is a shared TEST/SC pin. The SC pin can be used 1 second after power-on. V D D L O A D DT A C The DT pin is a delay time oscillator input pin. It is connected to an external RC to obtain the desired output turn-on duration. Variable output turn-on durations can be achieved by selecting various values of RC or using a variable resistor. The DT structure is shown in Fig.1. V R E F R E L A Y /L E D _ Fig.3 RELAY Pin Drive RELAY + D T R E L A Y 8 0 5 0 1 0 k W C o m p _ + S R F F I C L K TRIAC The TRIAC pin is a CMOS output structure which will output a series of pulses when active. The pulse train is synchronised by the ZC (zero crossing) input. The active duration is controlled by the delay time oscillator and the MODE pin. The TRIAC structure is shown in Fig.4. C o m p O s c illa to r Fig.1 DT Oscillator Structure L O A D BUZ/BUZ T R IA C The BUZ & BUZ pins are both CMOS output structures. They will output 4 beep sounds within 1second to indicate that the warm-up time has completed. These differential output pins can be used to drive a piezo buzzer. The BUZ/BUZ structure are shown in Fig.2. 6 8 W 0 .0 4 7 m F T R IA C A C 1 0 k W Fig.4 TRIAC Pin Drive TRIAC Rev. 1.50 4 February 21, 2011 HT7612/HT7612B MODE The MODE pin is a tristate input which is used to select the desired device operating mode. MODE pin Operating Status Mode Description VDD ON Output is always ON: RELAY output high for RELAY driving. TRIAC pulse train output is synchronised by ZC for TRIAC driving. VSS OFF Output is always OFF: RELAY output low for RELAY driving. TRIAC output low for TRIAC driving. OPEN AUTO Outputs remain in the OFF state until activated by a valid PIR input trigger signal. When working in the AUTO mode, the devices allows for an override control by switching the ZC signal. device is overridden to ON and there is no further override operations, it will automatically return to the AUTO mode after 8 hours. It will flash 3 times at a 1Hz rate when returning to the AUTO mode. But if the AUTO mode is changed by switching the MODE switch, it will not flash, as shown in Fig.5. The device also provides an additional test function on the MODE pin. If the MODE pin is presented with a high pulse, of greater than 400ms duration, within 1 second after power-on, the device will be forced into its test mode. When the device enters the test mode the power-on delay time will be changed from its normal operating value of 40 seconds to 10 seconds. In Fig.6, an external pull-high resistor is required for normal applications. ZC V The ZC pin is a CMOS Schmitt trigger input pin. Using suitable ZC signal switching, the device can provide the following functions: D D 2 M W 1 M W A C · Override control When the device is operating in the AUTO mode, which is when the MODE pin is open, the output will be activated by a valid PIR trigger signal and the output active duration will be controlled by a DT oscillating period. The mode can be switched from the AUTO mode to the ²ON² mode by either connecting the MODE pin to VDD or switching the ZC signal with an OFF/ON operation of the power switch. The term ²override² refers to the change of operating mode by switching the power switch. The device can be toggled from ON to AUTO by an override operation. If the Z C Fig.6 ZC Application Example Note: Regarding the priority of the MODE pin and the ZC switching, note that when the MODE pin is connected to VDD or VSS, the MODE state will be determined by the MODE pin. When the MODE pin is OPEN, the MODE state will be determined by the ZC switching. fla s h fla s h O p e r a tin g M o d e A U T O O N A U T O 8 h r O N A U T O < 8 h r < 3 s e c Z C A lw a y s h ig h o r a lw a y s L o w > 3 0 m s Fig.5 ZC Override Timing Rev. 1.50 5 February 21, 2011 HT7612/HT7612B CDS LED The CDS pin is connected to an internal comparator input. It is used to allow the device to distinguish between day and night conditions. When the CDS input voltage is lower than VL, the PIR amplifier circuit will be disabled and the TRIAC and RELAY output pins will be inactive. When the input voltage of the CDS is higher than VL, the outputs are both active. The debounce time for the CDS pin for switching the outputs from an inactive to an active state is about 15~20 seconds for the HT7612 and less than 3 seconds for the HT7612B. Connect this pin to VDD when this function is not used. The CDS timing is shown in Fig.7 The LED pin is a CMOS output pin which is used as a valid trigger indicator. When the TRIAC/RELAY is activated, this pin will be active until the TRIAC/RELAY has is switched OFF. The LED pin structure is shown in Fig.9. CDS Status Output Low Day Time Disabled High Night Enabled R E L A Y /L E D 1 k W T r ig g e r In d ic a to r Fig. 9 LED Pin Drive LED LVD LVD is a low voltage detector. When the detected voltage is lower than 1.1V, the LED flicker and the buzzer will emit a tone. C D S T R IA C & R E L A Y A c tiv e In a c tiv e In Fig10, assume RX, RLVD can be adjusted to obtain the desired voltage detection level. A c tiv Fig.7 CDS Timing V In Fig.8, RCDS and RY can be adjusted to obtain the desired daytime detection level. R + R E F - V R Y L R X B U Z /L V D 1 .1 V R L V D T E S T /S C B U Z /C D S + V D D Fig.10 LVD Application Example C D S T E S T /S C Fig.8 CDS Application Example VREF VH VREF Comp1 VH Output OP1 OP2 VM D VM VL S Comp2 VL VREF Regulator G PIR Sensor VH Comparator Input VL PIR Amplifier Rev. 1.50 6 February 21, 2011 HT7612/HT7612B Effective Trigger Timing The effective input trigger signal width should be ³ 24ms. The output is valid either with (1) trigger signal width ³ 0.5 seconds or (2) more than 2 effective trigger inputs within 2 seconds (separation of 2 triggers ³ 0.5s). The separation time between two TRIAC(RELAY) turn-on time must be more than 1 sec. The trigger timing is shown in Fig.11. Fig.11 Trigger Timing Retrigger When the output of the comparator is a valid signal, the RELAY/TRIAC will be activated and the active duration is controlled by the DT oscillating period. If the previous ²Delay Time tD² has not been exceeded and the next valid signal occurs again, the active duration of the RELAY/TRIAC will be restarted. The timing is shown in Fig.12. Fig.12 Retrigger Rev. 1.50 7 February 21, 2011 HT7612/HT7612B V LVD & CDS Detecting Circuit The external and internal detecting circuits for LVD and CDS are shown in Fig.13. When the input voltage VLVD is lower than 1.1V, the comparator outputs a low level which means that VDD is lower than the minimum operating voltage (Vmin). When VCDS is lower than VL, the comparator outputs a high level which means that it is daytime, otherwise it is night. V D D R X R E F R Y B U Z /L V D B U Z /C D S R L V D R C D S T E S T /S C Where Fig.13 External Application Circuit V V C D S R = L V D = R L V D R R C D S L V D + R C D S + R V X Y V D D Note: R E F When the CDS input voltage is lower than VL, it means that a daytime condition exists for the PIR circuit. Relationship LVD and CDS The LVD and CDS trigger timing are shown in Fig.14 and Fig.15 respectively. In Fig.14, When an LVD condition occurs, the LED will flicker and the buzzer will emit a tone. In Fig.15, When the CDS state changes from low to high, the output of the PIR is enabled after 10 sec for the HT7612 or 0 sec for the HT7612B, and when the CDS sate changes from high to low, will be disabled. Fig.14 Trigger Timing of LVD CDS State (Internal signal) Output Enable 10 sec for HT7612 0 sec for HT7612B + Trigger Level Comparator Input - Trigger Level Comparator Output Fig.15 Trigger Timing of CDS Rev. 1.50 8 February 21, 2011 HT7612/HT7612B Trigger Timing Note: The output is activated if the trigger signal conforms to the following criteria: 1. Two triggers occur within 2 seconds and separation time between two triggers is more than 0.5sec. 2. The trigger signal sustains duration ³ 0.5 seconds. Rev. 1.50 9 February 21, 2011 HT7612/HT7612B Application Circuit AC Power Application · TRIAC D PIR S G R1 56K C1 0.02uF C3 22uF 22K R2 22K R3 R7 1M R5 1M C6 0.02uF C7 0.02uF R6 1M C8 3nF 1 2 3 4 5 6 7 8 OP1P OP1N OP1O OP2N OP2O TEST/SC ZC BUZ/LVD BUZB/CDS MODE TRIAC RELAY/LED TD VDD Vref VSS HT7612/HT7612B 16 15 14 13 12 11 10 9 CDS Buzzer LED C12 0.1uF 2 R10 1M W1 Jumper ON AUTO 1K OFF R15 R9 1M 1 3 2.4M R11 1M R20 C15 0.1uF 68 R19 D3 5V R18 10K D2 1N4004 C11 100uF Triac R16 100 /2W 0.68uF/ 350V C10 R17 680K D4 1N4004 AC 110V Lamp for TRIAC LAMP1 February 21, 2011 10 Rev. 1.50 22uF C2 C4 1uF GND Adjust R9 to fit various CDS. Adjust R6 to obtain the desired output duration. Adjust R5 to change PIR sensitivity. Change the value of C10 to 0.33mF/600V for AC 220V application. Note: HT7612/HT7612B · RELAY D PIR S G R1 56K C1 0.02uF C3 22uF C2 22uF 22K R2 22K R3 C4 1uF R7 1M R5 1M C6 0.02uF C7 0.02uF R6 1M 1 2 3 4 5 6 7 8 OP1P ZC TEST/SC MODE BUZB/CDS BUZ/LVD OP1N OP1O OP2N OP2O TRIAC RELAY/LED TD VDD Vref VSS HT7612/HT7612B 16 15 14 13 12 11 10 9 CDS Buzzer C12 0.1uF 2 1M R10 W1 Jumper ON OFF AUTO R9 1M 1 3 2.4M R11 1M R19 C9 10uF 3 GND HT7150-1 OUT 1 IN 2 R14 10K R15 LED D2 1N4004 D3 24V Q1 8050 GND 1 C11 100uF/50V R17 680K C10 0.68uF/ 350V D4 Bridge1 3 /2W R16 100 2 4 RELAY1 Relay-SPST LAMP1 Lamp for RELAY AC 110V February 21, 2011 11 Rev. 1.50 C8 3nF GND 1K Adjust R9 to fit various CDS. Adjust R6 to obtain the desired output duration. Adjust R5 to change PIR sensitivity. Change the value of C10 to 0.33mF/600V for AC 220V application. Note: HT7612/HT7612B 4.5V DC Power Application Circuit D PIR S G R1 56K C1 0.02uF C3 22K R2 R3 22K R7 1M R5 1M C6 0.02uF C7 0.02uF R6 1M C8 3nF 1 2 3 4 5 6 7 8 OP1N OP1P ZC TEST/SC BUZB/CDS BUZ/LVD OP2N MODE OP1O OP2O TRIAC RELAY/LED TD VDD Vref VSS HT7612/HT7612B 16 15 14 13 12 11 10 9 R8 680K CDS OFF AUTO ON Buzzer 1 3 R9 1M 1M R10 W1 Jumper 2 D2 D1 C10 0.1uF D3 C9 100uF D4 C12 2.2uF 1N5819 GND VCC 1 2 3 Rfb 10 4.5V Battery VIN L1 10uH SW OVP EN GND FB HT7939 5 6 4 Rsh 100K C11 22uF GND February 21, 2011 12 Rev. 1.50 22uF C2 22uF C4 1uF GND Adjust R9 to fit various CDS. Adjust R6 to obtain the desired output duration. Adjust R5 to change PIR sensitivity. Note: HT7612/HT7612B Photo-transistor Application Circuit D PIR S G R1 56K C1 0.02uF C3 R2 22K R3 22K R7 1M R5 1M C6 0.02uF C7 0.02uF R6 1M C8 3nF 1 2 3 4 5 6 7 8 OP1P OP1N TEST/SC ZC BUZB/CDS BUZ/LVD OP2N MODE OP1O OP2O TRIAC RELAY/LED TD VDD Vref VSS HT7612/HT7612B 16 R8 1M R10 R9 1M 2 Jumper W1 680K 1 OFF AUTO ON Buzzer Photo-transistor 15 14 13 12 11 10 9 3 D2 D1 C10 0.1uF D3 C9 100uF D4 C12 2.2uF 1N5819 GND VCC 1 2 3 Rfb 10 4.5V Battery GND SW EN OVP VIN L1 10uH FB HT7939 6 4 5 Rsh 100K C11 22uF GND February 21, 2011 13 Rev. 1.50 22uF C2 22uF C4 1uF GND Adjust R9 to fit various CDS. Adjust R6 to obtain the desired output duration. Adjust R5 to change PIR sensitivity. Use a Photo-transistor instead of a CDS to meet European RoHS standards. Note: HT7612/HT7612B Package Information 16-pin DIP (300mil) Outline Dimensions A B A 1 6 9 1 8 B 1 6 9 1 8 H H C C D D G E G E I F I F Fig1. Full Lead Packages Fig2. 1/2 Lead Packages · MS-001d (see fig1) Symbol A Nom. Max. 0.780 ¾ 0.880 B 0.240 ¾ 0.280 C 0.115 ¾ 0.195 D 0.115 ¾ 0.150 E 0.014 ¾ 0.022 F 0.045 ¾ 0.070 G ¾ 0.100 ¾ H 0.300 ¾ 0.325 I ¾ ¾ 0.430 Symbol A Rev. 1.50 Dimensions in inch Min. Dimensions in mm Min. Nom. Max. 19.81 ¾ 22.35 B 6.10 ¾ 7.11 C 2.92 ¾ 4.95 D 2.92 ¾ 3.81 E 0.36 ¾ 0.56 1.78 F 1.14 ¾ G ¾ 2.54 ¾ H 7.62 ¾ 8.26 I ¾ ¾ 10.92 14 February 21, 2011 HT7612/HT7612B · MS-001d (see fig2) Symbol A Nom. Max. 0.735 ¾ 0.775 B 0.240 ¾ 0.280 C 0.115 ¾ 0.195 D 0.115 ¾ 0.150 E 0.014 ¾ 0.022 F 0.045 ¾ 0.070 G ¾ 0.100 ¾ H 0.300 ¾ 0.325 I ¾ ¾ 0.430 Symbol A Rev. 1.50 Dimensions in inch Min. Dimensions in mm Min. Nom. Max. 18.67 ¾ 19.69 B 6.10 ¾ 7.11 C 2.92 ¾ 4.95 D 2.92 ¾ 3.81 E 0.36 ¾ 0.56 1.78 F 1.14 ¾ G ¾ 2.54 ¾ H 7.62 ¾ 8.26 I ¾ ¾ 10.92 15 February 21, 2011 HT7612/HT7612B · MO-095a (see fig2) Symbol A Nom. Max. 0.745 ¾ 0.785 B 0.275 ¾ 0.295 C 0.120 ¾ 0.150 D 0.110 ¾ 0.150 E 0.014 ¾ 0.022 F 0.045 ¾ 0.060 G ¾ 0.100 ¾ H 0.300 ¾ 0.325 I ¾ ¾ 0.430 Symbol A Rev. 1.50 Dimensions in inch Min. Dimensions in mm Min. Nom. Max. 18.92 ¾ 19.94 B 6.99 ¾ 7.49 C 3.05 ¾ 3.81 D 2.79 ¾ 3.81 E 0.36 ¾ 0.56 1.52 F 1.14 ¾ G ¾ 2.54 ¾ H 7.62 ¾ 8.26 I ¾ ¾ 10.92 16 February 21, 2011 HT7612/HT7612B 16-pin NSOP (150mil) Outline Dimensions A 1 6 9 1 B 8 C C ' G H D E a F · MS-012 Symbol A Min. Nom. Max. 0.228 ¾ 0.244 B 0.150 ¾ 0.157 C 0.012 ¾ 0.020 C¢ 0.386 ¾ 0.402 D ¾ ¾ 0.069 E ¾ 0.050 ¾ F 0.004 ¾ 0.010 G 0.016 ¾ 0.050 H 0.007 ¾ 0.010 a 0° ¾ 8° Symbol Rev. 1.50 Dimensions in inch Dimensions in mm Min. Nom. Max. A 5.79 ¾ 6.20 B 3.81 ¾ 3.99 C 0.30 ¾ 0.51 C¢ 9.80 ¾ 10.21 D ¾ ¾ 1.75 E ¾ 1.27 ¾ F 0.10 ¾ 0.25 G 0.41 ¾ 1.27 H 0.18 ¾ 0.25 a 0° ¾ 8° 17 February 21, 2011 HT7612/HT7612B Product Tape and Reel Specifications Reel Dimensions D T 2 A C B T 1 SOP 16N (150mil) Symbol Description Dimensions in mm A Reel Outer Diameter 330.0±1.0 B Reel Inner Diameter 100.0±1.5 C Spindle Hole Diameter D Key Slit Width T1 Space Between Flange T2 Reel Thickness Rev. 1.50 13.0 +0.5/-0.2 2.0±0.5 16.8 +0.3/-0.2 22.2±0.2 18 February 21, 2011 HT7612/HT7612B Carrier Tape Dimensions P 0 D P 1 t E F W B 0 C D 1 P K 0 A 0 R e e l H o le IC p a c k a g e p in 1 a n d th e r e e l h o le s a r e lo c a te d o n th e s a m e s id e . SOP 16N (150mil) Symbol Description Dimensions in mm W Carrier Tape Width 16.0±0.3 P Cavity Pitch 8.0±0.1 E Perforation Position 1.75±0.1 F Cavity to Perforation (Width Direction) 7.5±0.1 D Perforation Diameter 1.55 +0.10/-0.00 D1 Cavity Hole Diameter 1.50 +0.25/-0.00 P0 Perforation Pitch 4.0±0.1 P1 Cavity to Perforation (Length Direction) 2.0±0.1 A0 Cavity Length 6.5±0.1 B0 Cavity Width 10.3±0.1 K0 Cavity Depth 2.1±0.1 t Carrier Tape Thickness 0.30±0.05 C Cover Tape Width 13.3±0.1 Rev. 1.50 19 February 21, 2011 HT7612/HT7612B Holtek Semiconductor Inc. (Headquarters) No.3, Creation Rd. II, Science Park, Hsinchu, Taiwan Tel: 886-3-563-1999 Fax: 886-3-563-1189 http://www.holtek.com.tw Holtek Semiconductor Inc. (Taipei Sales Office) 4F-2, No. 3-2, YuanQu St., Nankang Software Park, Taipei 115, Taiwan Tel: 886-2-2655-7070 Fax: 886-2-2655-7373 Fax: 886-2-2655-7383 (International sales hotline) Holtek Semiconductor Inc. (Shenzhen Sales Office) 5F, Unit A, Productivity Building, No.5 Gaoxin M 2nd Road, Nanshan District, Shenzhen, China 518057 Tel: 86-755-8616-9908, 86-755-8616-9308 Fax: 86-755-8616-9722 Holtek Semiconductor (USA), Inc. (North America Sales Office) 46729 Fremont Blvd., Fremont, CA 94538 Tel: 1-510-252-9880 Fax: 1-510-252-9885 http://www.holtek.com Copyright Ó 2011 by HOLTEK SEMICONDUCTOR INC. The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. Holtek¢s products are not authorized for use as critical components in life support devices or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information, please visit our web site at http://www.holtek.com.tw. Rev. 1.50 20 February 21, 2011