EMB9 dual digital transistors (PNP+ PNP) FEATURES Two DTA114Y chips in a package z z Mounting possible with SOT-563 automatic mounting machines z Transistor elements are independent,eliminating interference Mouting cost and area be cut in half z SOT-563 1 Marking: B9 Equivalent circuit Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units VCC Supply Voltage -50 V IC(MAX) Output Current -100 mA -40 to +6 V Vi Input Voltage PD Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ Electrical Characteristics (Ta=25℃) Parameter Symbol Test Input turn-on voltage Vi(on) VO=-0.3V, IO=-1mA Input cut-off voltage Vi(off) VCC=-5V, IO=-100µA -0.3 V Output voltage VO(on) IO=-5mA, Ii=-0.25 mA -0.3 V Vi =-5V -0.88 mA VCC=-50V, Vi=0 -0.5 µA Input cut-off current Output cut-off current Ii IO(off) conditions Min Typ Max -1.4 Unit V DC current gain Gi VO =-5V, IO=-5mA 68 Transition frequency fT VO =-10V, IO=5mA, f =100MHz Input resistance R1 7 13 Resistance ratio R2/R1 3.7 5.7 250 MHz KΩ 1 JinYu semiconductor www.htsemi.com Date:2011/ 05