EMG8 d u al d ig ital tran sisto rs ( NPN+ NPN) SOT-553 FEATURES z Two DTC143Z chips in a package z Mounting cost and area can be cut in half 1 Marking: G8 Equivalent circuit: Absolute maximum ratings (Ta=25℃) Symbol VCC Parameter Value Units 50 V -5~30 V Supply Voltage Vi Input voltage IO Output current 100 mA PD Power dissipation 150 mW TJ Junction temperature 150 ℃ Tstg Storage temperature -55~+150 ℃ Electrical Characteristics (Ta=25℃) Parameter Symbol Test conditions Min 1.3 Typ Max Unit Input turn-on voltage Vi(on) VCC=0.3V, IO=5mA Input cut-off voltage Vi(off) VCC=5V, IO=100µA 0.5 V Output voltage VO(on) IO=5mA, Ii=0.25mA 0.3 V Ii Vi =5V 1.8 mA IO(off) VCC=50V, Vi=0 0.5 µA DC current gain Gi VO =5V, IO=10mA Transition frequency fT VCE =10V, IC=5mA, f =100MHz Input resistance R1 3.29 6.11 Resistance ratio R2/R1 8 12 Input cut-off current Output cut-off current V 80 250 MHz KΩ 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 EMG8 Typical Characteristics ON Characteristics OFF Characteristics 10 100 VCC=5V VO=0.3V 3 (V) 30 (mA) 1 0.3 Ta=100 ℃ OUTPUT CURRENT INPUT VOLTAGE I0 VI(ON) 10 3 Ta=25 ℃ 1 Ta=100 ℃ 0.1 Ta=25 ℃ 0.03 0.01 0.3 0.003 0.1 0.1 0.3 1 10 3 OUTPUT CURRENT G —— IO 1E-3 0.0 100 30 0.2 (mA) 0.4 0.6 INPUT VOLTAGE VI(OFF) VO —— IO 0.8 1.0 (V) IO 1000 1000 VO=5V IO/II=20 (mV) 300 300 V0 Ta=25 ℃ OUTPUT VOLTAGE DC CURRENT GAIN G Ta=100 ℃ 100 30 10 100 Ta=100 ℃ Ta=25 ℃ 30 3 1 0.1 1 0.3 10 3 OUTPUT CURRENT CO —— IO 100 30 10 0.1 0.3 1 10 3 OUTPUT CURRENT (mA) IO 30 (mA) VR 10 f=1MHz Ta=25 ℃ CAPACITANCE CO (pF) 8 6 4 2 0 0 4 8 12 REVERSE BIAS VOLTAGE 16 VR 20 (V) 2 JinYu semiconductor www.htsemi.com Date:2011/ 05 100