M1 • • • • M7 THRU Features 1 Amp Silicon Rectifier 50 to 1000 Volts For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250°C for 10 Seconds At Terminals Maximum Ratings SMAE • Operating Temperature: -65°C to +175°C • Storage Temperature: -65°C to +175°C • Maximum Thermal Resistance; 15 °C/W Junction To Lead A Cathode Band Device Marking M1 M2 M3 M4 M5 M6 M7 Maximum Reccurrent Peak Reverse Voltage 50V 100V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 140V 280V 420V 560V 700V Maximum DC Blocking Voltage 50V 100V 200V 400V 600V 800V 1000V B G C F H E D DIMENSIONS Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward IF(AV) 1.0A TJ = 75°C current Peak Forward Surge IFSM 50A 8.3ms, half sine, Current TJ = 150°C Maximum IFM = 1.0A; Instantaneous VF 1.1V TJ = 25°C* Forward Voltage Maximum DC Reverse Current At IR 10µA TJ = 25°C Rated DC Blocking 50µA TJ = 125°C Voltage Maximum Reverse Trr IF=0.5A, IR=1.0A, 1.8µs Recovery Time Irr=0.25A CJ Typical Junction 15pF Measured at Capacitance 1.0MHz, VR=4.0V *Pulse test: Pulse width 300 µsec, Duty cycle 2% DIM A B C D E F G H INCHES MIN 0.157 0.100 0.078 0.194 0.055 0.006 0.030 MAX 0.177 0.110 0.096 0.222 0.071 0.008 0.012 0.060 MM MIN 3.99 2.54 1.98 4.93 1.40 0.152 0.76 MAX 4.50 2.80 2.42 5.56 1.80 0.203 0.305 NOTE 1.52 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ GS1A THRU GS1M Figure 3 Maximum Overload Surge Current Figure 1 Typical Forward Characteristics 20 36 10 30 6 4 Amps 24 -65°C to +175°C 18 2 12 1 Amps 6 .6 1 .4 .2 10 Cycles 100 Peak Forward Current - Amperesversus Number of Cycles at 60Hz 25°C .1 Figure 4 Forward Derating Curve .06 1.4 .04 1.2 .02 .01 1.0 .4 .6 .8 1.0 1.2 Amps 1.4 Volts .8 .6 Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts .4 Resistive or .2 Inductive Load 0 0 20 40 60 80 100 120 140 160 180 200 °C Average Forward Rectified Current - Amperesversus Ambient Temperature - °C Figure 2 Junction Capacitance 100 60 40 Typical Distribution 20 pF Median 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 Junction Capacitance - pFversus Reverse Junction Potential (Applied V + 0.7 Volts) - Volts ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ GS1A THRU GS1M Figure 5 Peak Forward Surge Current 1000 600 Figure 6 New SMB Assembly 400 200 Amps 100 60 Round Lead Process 40 20 10 .01 .02 .06 .1 .2 .6 1 2 6 10 mS Peak Forward Surge Current - Amperesversus Pulse Duration - Milliseconds (mS) ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５