CMT10N10 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced MOSFET is designed to withstand high ! Avalanche Energy Specified energy in avalanche and commutation modes. The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode Discrete Fast Recovery Diode with a fast recovery time. Designed for high voltage, high ! Diode is Characterized for Use in Bridge Circuits speed switching applications in power supplies, converters ! IDSS and VDS(on) Specified at Elevated Temperature and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION SYMBOL TO-220 D SO URCE DRAIN G ATE Front View G S 1 2 N-Channel MOSFET 3 ORDERING INFORMATION Part Number Package CMT10N10N220 TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation Symbol Value Unit A ID 10 IDM 35 VGS ±20 V VGSM ±40 V PD 40 W 0.32 W/℃ TJ, TSTG -55 to 150 ℃ EAS 69 mJ θJC 3.13 ℃/W θJA 100 TL 260 Derate above 25℃ Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ (VDD = 100V, VGS = 10V, IL = 10A, L = 1.38mH, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 2001/12/24 Preliminary Rev. 1 Champion Microelectronic Corporation ℃ Page 1 CMT10N10 POWER FIELD EFFECT TRANSISTOR ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT10N10 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) Symbol Min V(BR)DSS 100 Typ Max Units V Drain-Source Leakage Current (VDS = 100 V, VGS = 0 V) (VDS = 100 V, VGS = 0 V, TJ = 125℃) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 2.0 V Static Drain-Source On-Resistance (VGS = 5.0 V, ID = 5.0A) * RDS(on) 0.18 Ω Drain-Source On-Voltage (VGS = 5.0 V) (ID = 10 A) VDS(on) 2.6 V Forward Transconductance (VDS = 50 V, ID = 5.0A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge μA 25 100 gFS (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 50 V, ID = 10 A, VGS = 5.0 V, RG = 9.1Ω) * 1.0 1.45 1.85 3.5 mhos Ciss 741 1040 Coss 175 250 pF pF Crss 18.9 40 pF td(on) 11 20 tr 74 150 ns ns td(off) 17 30 ns tf 38 80 ns Qg 9.3 15 Qgs 2.56 nC nC Qgd 4.4 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH Gate-Source Charge Gate-Drain Charge (VDS = 80 V, ID = 10 A, VGS = 5.0 V)* SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 10 A, VGS = 0 V, dIS/dt = 100A/µs) VSD 1.5 V ton ** ns trr 124.7 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance 2001/12/24 Preliminary Rev. 1 Champion Microelectronic Corporation Page 2 CMT10N10 POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS 2001/12/24 Preliminary Rev. 1 Champion Microelectronic Corporation Page 3 CMT10N10 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220 A D c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 E F φ A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 e b e1 A1 c L1 φ Side View Front View 2001/12/24 Preliminary Rev. 1 Champion Microelectronic Corporation Page 4 CMT10N10 POWER FIELD EFFECT TRANSISTOR IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. Use of CMC products in such applications is In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2001/12/24 Preliminary Rev. 1 T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Champion Microelectronic Corporation Page 5