CMT2N7000 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ! High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These ! Voltage Controlled Small Signal Switch products have been designed to minimize on-state ! Rugged and Reliable resistance while provide rugged, reliable, and fast switching ! High Saturation Current Capability performance. It can be used in most applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL TO-92 D DRAIN GATE SOURCE Top View G 1 2 S 3 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7000 TO-92 ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain Source Voltage Rating VDSS 60 V Drain-Gate Voltage (RGS = 1.0MΩ) VDGR 60 V mA Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation ID 200 IDM 500 VGS ±20 V VGSM ±40 V PD 350 mW 2.8 mW/℃ -55 to 150 ℃ Derate above 25℃ Operating and Storage Temperature Range TJ, TSTG Thermal Resistance － Junction to Ambient θJA 357 ℃/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 300 ℃ 2002/10/07 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 1 CMT2N7000 SMALL SIGNAL MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT2N7000 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 10 μA) Symbol Min V(BR)DSS 60 Drain-Source Leakage Current (VDS = 48 V, VGS = 0 V) (VDS = 48 V, VGS = 0 V, TJ = 125℃) IDSS Gate-Source Leakage Current-Forward (Vgsf = 15 V, VDS = 0 V) IGSSF Gate Threshold Voltage * (VDS = VGS, ID = 1.0 mA) VGS(th) Static Drain-Source On-Resistance * (VGS = 10 V, ID = 0.5A) RDS(on) Drain-Source On-Voltage * (VGS = 10 V, ID = 0.5A) VDS(on) 0.8 Typ Max Units V 1.0 1.0 μA mA -10 nA 3.0 V Ω 5.0 V 2.5 On-State Drain Current * (VGS = 5 V, VDS = 10 V) Id(on) 60 Forward Transconductance (VDS = 10 V, ID = 200mA) * gFS 100 Input Capacitance Ciss 60 Coss 25 pF pF Crss 5.0 pF td(on) 10 td(off) 10 ns ns (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time (VDD = 15 V, ID = 500 mA, Vgen = 10 V, RG = 25Ω, RL = 30Ω) * mA mmhos * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% 2002/10/07 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 2 CMT2N7000 SMALL SIGNAL MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 2002/10/07 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 3 CMT2N7000 SMALL SIGNAL MOSFET PACKAGE DIMENSION TO-92 θ A A1 b D D1 A E L e θ θ1 A1 L θ1 e D D1 b E 2002/10/07 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 4 CMT2N7000 SMALL SIGNAL MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. Use of CMC products in such applications is In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2002/10/07 Preliminary Rev. 1.0 T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Champion Microelectronic Corporation Page 5