JINANJINGHENG LL60

R
LL60, LL60P
FEATURES
SMALL SIGNAL
CHOTTKY DIODES
SMALL SIGNAL SCHOTTKY DIODES
S E M I C O N D U C T O R
Mini-MELF
Metal-on-silicon junction, majority carrier conduction
High current capability, Low forward voltage drop
JF
Extremely low reverse current IR
0.063(1.6)
0.055(1.4)
Ultra speed switching characteristics
Small temperature coefficient of forward characteristics
0.019(0.48)
0.011(0.28)
Satisfactory Wave detection efficiency
0.142(3.6)
0.134(3.4)
For use in RECORDER¡¢TV¡¢RADIO¡¢TELEPHONE as detectors,super high
speed switching circuits, small current rectifier
MECHANICAL DATA
Dimensions in inches and (millimeters)
Case: MinMELF glass case (SOD- 80)
Polarity:color band denotes cathode end
Weight: Approx. 0.05gram
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
VRRM
IF
IFSM
TSTG/TJ
TL
Value
Parameters
LL60
Repetitive Peak Reverse Voltage
Forward Continuous Current
TA=25 C
20
30
30
50
150
Peak Forward Surge Current(t=1S)
Storage and junction Temperature Range
Maximum Lead Temperature for Soldering during 10S at 4mm from Case
Units
LL60P
Volts
mA
mA
400
-65 to+125
C
230
C
ELECTRICAL CHARACTERISTICS
Symbols
Parameters
Test Conditions
LL60
LL60P
LL60
LL60P
LL60
LL60P
LL60
LL60P
IF=1mA
VF
Forward Voltage
IR
Reverse Current
CJ
h
trr
RqJA
Junction Capacitance
Detection Efficiency(See diagram 4)
Reverse Recovery time
Junction Ambient Thermal Resistance
Min .
IF=30mA
IF=200mA
VR=15V
VR=1V f=1MHz
VR=10V f=1MHz
VI=3V f=30MHz CL=10pF RL=3.8kW
Value
Typ .
0.35
0.26
0.70
0.70
1.0
5.0
4.0
.
0.5
0.5
1.0
1.0
5.0
10.0
60
Volts
mA
%
1
350
JA
Units
pF
10.0
IF=IR=1mA Irr=1mA Rc=100W
R
Max
ns
C/W
2-1
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-6943657
FAX:86-531-6947096
WWW.JIFUSEMICON.COM
FIG.1-FORWARD CURRENT VERSUS FORWARD
VOLTAGE (TYPICAL VALUES)
SMALL SIGNAL
CHOTTKY DIODES
RATINGS AND CHARACTERISTIC CURVES LL60
FIG.2-REVERSE CURRENT VERSUS CONTINUOUS
REVERSE VOLTAGE
IR(UA)
IF(mA)
1.40
100
90
1.20
80
1.00
70
60
0.80
50
0.60
40
30
0.40
20
0.20
10
0
0.2
0.4
0.6
0.8
0
1.0 VF(V)
5
10
15
20
25
30
VR(V)
FIG.4-DETECTION EFFICIENCY MEASUREMENT
CIRCUIT
FIG.3-JUNCTION CAPACITANCE VERSUS CONTINUOUS
REVERSE APPLIED VOLTAGE
C(pF)
4.0
output
3.5
D.U.T.
3.0
2.5
~
~
~
2.0
Input:3VRMS
CL
10pF
RL
3.8kW
1.5
1.0
0.5
0
1
2
3
4
5
6
VR(V)
2-2
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-6943657
FAX:86-531-6947096
WWW.JIFUSEMICON.COM
FIG.1-FORWARD CURRENT VERSUS FORWARD
VOLTAGE (TYPICAL VALUES)
SMALL SIGNAL
CHOTTKY DIODES
RATINGS AND CHARACTERISTICS CURVES LL60P
FIG.2-REVERSE CURRENT VERSUS CONTINUOUS
REVERSE VOLTAGE
IR( A)
IF(mA)
0.70
500
450
0.60
400
0.50
350
300
0.40
250
0.30
200
150
0.20
100
0.10
50
0
0.2
0.4
0.6
0
1.0 VF(V)
0.8
5
10
15
20
25
30
VR(V)
FIG.4-DETECTION EFFICIENCY MEASUREMENT
CIRCUIT
FIG.3-JUNCTION CAPACITANCE VERSUS CONTINUOUS
REVERSE APPLIED VOLTAGE
C(pF)
20
18
16
output
D.U.T.
14
12
~
~
~
10
Input:3VRMS
CL
10pF
RL
3.8kW
8
6
0
1
2
3
4
5
6
VR(V)
2-3
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-6943657
FAX:86-531-6947096
WWW.JIFUSEMICON.COM