1N60P Small Signal Schottky Diodes VOLTAGE RANGE: 45 V CURRENT: 0.1 A Features fffff DO - 35(GLASS) Metal s illicon junction m ajority carrier conduction High current capability,Low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics Sm all tem perature coefficient of forward f characteris tics Satis factory wave detection efficiency For us e in RECORDER. TV. RADIO. TELEPHONE as detectors ,s uper high s peed s witching circuits , s m all current rectifier Mechanical Data Dimensions in millimeters Cas e:JEDEC DO--35,glas s cas e Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES) Parameters Value Symbols Repetitive peak reverse voltage V RRM 45 V IF 50 mA IFSM 500 mA TSTG/TJ XX- 55 ---- + 125 TL 230 TA =25 Forw ard continuous current Peak f orw ard surge current (t=1s) Storage and junction temperature range UNITS 1N60P Maximum lead temperature f or soldering during 10s at 4mm f rom case ELECTRICAL CHARACTERISTICS Parameters Symbols Test Conditions I F=1m A Min. Value Typ. Max. 0.24 0.5 V VF Forw ard voltage UNITS I F =200m A 0.65 1.0 1.0 Reverse current IR VR =15V 0.5 Junction capacitance CJ VR =10V f=1MHz 6.0 pF 60.0 % Vl=3V f=30MHz C L=10pF R L=3.8K Detection ef f iciency (See FIG. 4) t rr Reverse recovery time Thermal resistance junction to ambient Rθ JA http://www.luguang.cn I F=IR =1m A Irr =1m A R C=100 1.0 400 mail:[email protected] A ns /W 1N60P Small Signal Schottky Diodes Ratings AND Charactieristic Curves FIG.1 -- FORWARD CURRENT VERSUS FORWARD VOLTAGE (TYPICAL VALUES) mA FIG.2 -- REVERSE CURRENT VERSUS CONTINUOUS REVERSE VOLTAGE µA 0.70 500 450 0.60 I F 400 I R 0.50 350 300 0.40 250 200 0.30 150 0.20 100 0.10 50 0 0 0.2 0.4 0.6 0.8 1.0 V VF FIG.3 -- JUNCTION CAPACITANCE VERSUS CONTINUOUS REVERSE APPLIED VOLTAGE 0 0 5 10 15 20 25 FIG.4 -- DETECTION EFFICIENCY MEASUREMENT CIRCUIT output D.U.T Input:3VRMS CL 10PF RL 3.8K http://www.luguang.cn 30 V VR mail:[email protected]